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    SIA811DJ Price and Stock

    Vishay Siliconix SIA811DJ-T1-E3

    MOSFET P-CH 20V 4.5A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA811DJ-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.35638
    		Buy Now

    Vishay Siliconix SIA811DJ-T1-GE3

    MOSFET P-CH 20V 4.5A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA811DJ-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3076
    		Buy Now

    SIA811DJ Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA811DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode Original PDF
    SIA811DJ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A SC70-6 Original PDF
    SIA811DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.5A SC70-6 Original PDF

    SIA811DJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    74460

    Abstract: SiA811DJ-T1-GE3 SC-70-6 SiA811DJ
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 08-Apr-05 74460 SiA811DJ-T1-GE3 SC-70-6 PDF

    7834

    Abstract: vishay MOSFET AN609 SiA811DJ 149494
    Text: SiA811DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA811DJ AN609 10-Aug-07 7834 vishay MOSFET 149494 PDF

    SC-70-6

    Abstract: SiA811DJ SiA811DJ-T1-GE3 74460
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 11-Mar-11 SC-70-6 SiA811DJ-T1-GE3 74460 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    74460

    Abstract: No abstract text available
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 SC-70-6 75hay 11-Mar-11 74460 PDF

    74460

    Abstract: No abstract text available
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 SC-70-6 75trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74460 PDF

    74460

    Abstract: SiA811DJ-T1-GE3 SiA811DJ SC-70-6
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 VDS (V) - 20 • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 18-Jul-08 74460 SiA811DJ-T1-GE3 SC-70-6 PDF

    SiA811ADJ-T1-GE3

    Abstract: SiA811DJ SiA811DJ-T1-GE3 SiA811ADJ
    Text: Specification Comparison Vishay Siliconix SiA811ADJ vs. SiA811DJ Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode PowerPAK SC-70 Identical Part Number Replacements: SiA811ADJ-T1-GE3 replaces SiA811DJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		SiA811ADJ SiA811DJ SC-70 SiA811ADJ-T1-GE3 SiA811DJ-T1-GE3 Curren31 02-Dec-08 PDF

    74460

    Abstract: SiA811DJ SiA811DJ-T1-E3 SC-70-6
    Text: New Product SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a 0.094 at VGS = - 4.5 V - 4.5 - 20 0.131 at VGS = - 2.5 V - 4.5 0.185 at VGS = - 1.8 V - 4.5 • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA811DJ SC-70 SC-70-6 08-Apr-05 74460 SiA811DJ-T1-E3 PDF

    74367

    Abstract: SiA811DJ
    Text: SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SiA811DJ feedbac50 S-70135Rev. 29-Jan-07 74367 PDF

    74367

    Abstract: SiA811DJ
    Text: SPICE Device Model SiA811DJ Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SiA811DJ 18-Jul-08 74367 PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    SBS 15 battery

    Abstract: 24v charger LTC4100 piezoelectric circuit charger design ideas LTC4101 SI5513DC SIA811DJ charge 6v battery ac to dc 5v 2a charger
    Text: DESIGN IDEAS L Smart Battery Charger for Battery Backup Introduction The most common power source used for backup power is a battery. In a backup power system it is important to know if the battery is ready and reliable at all times by constantly monitoring


    Original     		LTC4101 LTC4101 SBS 15 battery 24v charger LTC4100 piezoelectric circuit charger design ideas SI5513DC SIA811DJ charge 6v battery ac to dc 5v 2a charger PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Data ADP1864 and ADP1611 Reference Power Design FCDC 00047 FEATURES Input Voltage 5V +/- 5% Generates two voltages: An adjustable negative voltage that tracks an adjustable positive voltage Output Voltage: -7V to -12V and +7 to +12V Single resistor value change for each supply will adjust the output voltages


    Original     		ADP1864 ADP1611 150mA ADP1611 2n2222 2n2904 PDF

    vishay power pak SO-8 package height

    Abstract: si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8
    Text: Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 vishay power pak SO-8 package height si4812b Siliconix mosfet guide PowerPACK 1212-8 D2Pak Package vishay material Si5855DC "Power MOSFETs" 1206-8 chipfet layout SI4620DY PowerPAK SO-8 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 PDF