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Vishay Siliconix SI6463BDQ-T1-E3 MOSFET P-CH 20V 6.2A 8TSSOP
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DigiKey	SI6463BDQ-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI6463BDQ-T1-E3	Digi-Reel			1	1 $1.4 10 $1.4 100 $1.4 1000 $1.4 10000 $1.4	Buy Now
RS	SI6463BDQ-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1	Get Quote
Vishay Siliconix SI6463BDQ-T1-GE3 MOSFET P-CH 20V 6.2A 8TSSOP
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DigiKey	SI6463BDQ-T1-GE3	Digi-Reel			1	1 $1 10 $1 100 $1 1000 $1 10000 $1	Buy Now
	SI6463BDQ-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI6463BDQ-T1-E3/BKN P-CH MOSFET TSSOP-8 20V 15MOHM @ 4.5V \| Siliconix / Vishay SI6463BDQ-T1-E3/BKN
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RS	SI6463BDQ-T1-E3/BKN	Bulk			1	1 $1.09 10 $1.04 100 $0.93 1000 $0.93 10000 $0.93	Get Quote
Others SI6463BDQ AVAILABLE EU
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ComSIT USA	SI6463BDQ		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Huntington SI6463BDQ-T1-E3 MOSFET P-CH 20V 6.2A 8-TSSOP
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Win Source Electronics	SI6463BDQ-T1-E3		39,000			1 - 10 - 100 $1.7721 1000 $1.4863 10000 $1.4863	Buy Now

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SI6463BDQ Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
SI6463BDQ	Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
Si6463BDQ SPICE Device Model	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI6463BDQ-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6.2A 8-TSSOP	Original	PDF
SI6463BDQ-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6.2A 8-TSSOP	Original	PDF

SI6463BDQ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si6463BDQ Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	PDF	Si6463BDQ Si6459BDQ-T1-GE3 08-Apr-05
Si6463BDQ Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 11-Mar-11
Si6463ADQ Abstract: Si6463ADQ-T1 Si6463BDQ Text: Specification Comparison Vishay Siliconix Si6463BDQ vs. Si6463ADQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6463BDQ-T1 Replaces Si6463ADQ-T1 Si6463BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6463ADQ-T1	Original	PDF	Si6463BDQ Si6463ADQ Si6463BDQ-T1 Si6463ADQ-T1 Si6463BDQ-T1-E3 09-Nov-06
SI6463BDQ-T1-GE3 Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 18-Jul-08
Si6463BDQ Abstract: No abstract text available Text: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si6463BDQ 18-Jul-08
Si6463BDQ Abstract: No abstract text available Text: Si6463BDQ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -7.4 0.020 @ VGS = -2.5 V - 6.3 0.027 @ VGS = -1.8 V - 5.5 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6463BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	PDF	Si6463BDQ S-21782--Rev. 07-Oct-02
Untitled Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Si6463BDQ Abstract: No abstract text available Text: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si6463BDQ 19-Mar-03
8650 Abstract: AN609 Si6463BDQ 74036 Text: Si6463BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si6463BDQ AN609 29-Jun-07 8650 74036
72137 Abstract: Si6463BDQ Text: SPICE Device Model Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si6463BDQ S-52526Rev. 12-Dec-05 72137
Untitled Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si6463BDQ 2002/95/EC Si6463BDQ-T1-GE3 11-Mar-11
Si6463BDQ Abstract: No abstract text available Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	PDF	Si6463BDQ Si6459BDQ-T1-GE3 18-Jul-08

Si6463BDQ Abstract: No abstract text available Text: Si6463BDQ New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.015 @ VGS = -4.5 V -7.4 0.020 @ VGS = -2.5 V - 6.3 0.027 @ VGS = -1.8 V - 5.5 S* TSSOP-8 D 1 S 2 S 3 G 4 D Si6463BDQ G 8 D 7 S * Source Pins 2, 3, 6 and 7	Original	PDF	Si6463BDQ 08-Apr-05
si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	PDF	Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
BS250KL-TR1-E3 Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8	Original	PDF	SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
SI2333DS-T1-E3 Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K Text: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)	Original	PDF	SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 SI7414DN-T1-E3 SI7810DN-T1-E3 70026365Single SI9986CY-T1-E3 SI9986DY-T1-E3 SI9987DY-T1-E3 SI2333DS-T1-E3 SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	PDF	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
BS250KL Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	PDF	SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	PDF	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Si6459BDQ Abstract: Si6463BDQ Text: Si6459BDQ Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.115 at VGS = - 10 V - 2.7 0.150 at VGS = - 4.5 V - 2.4 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT S* G TSSOP-8 D 1 S 2 S 3	Original	PDF	Si6459BDQ Si6463BDQ Si6459BDQ-T1-GE3 18-Jul-08
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	PDF	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8

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SI6463BDQ Price and Stock

Vishay Siliconix SI6463BDQ-T1-E3

Vishay Siliconix SI6463BDQ-T1-GE3

Vishay Siliconix SI6463BDQ-T1-E3/BKN

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Vishay Huntington SI6463BDQ-T1-E3

SI6463BDQ Datasheets (4)

SI6463BDQ Datasheets Context Search

Si6463BDQ

Si6463BDQ

Si6463ADQ

SI6463BDQ-T1-GE3

Si6463BDQ

Si6463BDQ

Untitled

Untitled

Si6463BDQ

8650

72137

Untitled

Untitled

Si6463BDQ

Si6463BDQ

si5480

schematic diagram atx Power supply 500w

BS250KL-TR1-E3

SI2333DS-T1-E3

FSQ510 Equivalent

BS250KL

Siliconix

Si6459BDQ

GS 069