RJH60F0DPK Search Results

RJH60F0DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJH60F0DPK-00#T0		Renesas Electronics Corporation	IGBT for IH, TO-3P, /

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Renesas Electronics Corporation RJH60F0DPK-00-T0 IGBT TRENCH 600V 50A TO3P
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RJH60F0DPK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJH60F0DPK-00#T0		Renesas Electronics	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 50A 201.6W TO-3P		Original	PDF

RJH60F0DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package	Original	PDF	RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A curren9044
RJH60F0DPK Abstract: PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED Text: Preliminary RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching REJ03G1834-0100 Rev.1.00 Oct 13, 2009 Features • High speed switching • Low on-state voltage • Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P	Original	PDF	RJH60F0DPK REJ03G1834-0100 PRSS0004ZE-A RJH60F0DPK PRSS0004ZE-A SC-65 Silicon N Channel IGBT HIGH SPEED
RJH60 Abstract: RJH60F RJH60F0DPK SC-65 PRSS0004ZE-A R07DS0234EJ0200 Text: Preliminary Datasheet RJH60F0DPK R07DS0234EJ0200 Previous: REJ03G1834-0100 Rev.2.00 Dec 14, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)	Original	PDF	RJH60F0DPK R07DS0234EJ0200 REJ03G1834-0100) PRSS0004ZE-A Col9044 RJH60 RJH60F RJH60F0DPK SC-65 PRSS0004ZE-A R07DS0234EJ0200
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package	Original	PDF	RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A
RJH60F7 Abstract: control circuit of induction cooker rjh60f5 RJH60F control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608 Text: IGBT Products Wide Range of IGBT Families Highly efficient power supply circuits can be achieved by combin- Key Features and Target Applications ing Renesas Electronics IGBTs and PFC controllers. Renesas supplies ultra-compact, high-performance IGBTs for built-in flash units	Original	PDF	RJH608 RJH60F 0212/100/in-house/LAH/JE RJH60F7 control circuit of induction cooker rjh60f5 control ic for induction heating cooker RJH60F6 rjh60d2 rjh60f7dpq-a0 rjh1bf7 RJH608
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	PDF	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B
RJP60F0DPE Abstract: No abstract text available Text: Preliminary Datasheet RJP60F0DPE 600 V - 25 A - IGBT High Speed Power Switching R07DS0540EJ0100 Rev.1.00 Sep 09, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)  Trench gate and thin wafer technology	Original	PDF	RJP60F0DPE R07DS0540EJ0100 PRSS0004AE-B RJP60F0DPE
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
rjh60f5 Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.	Original	PDF	REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
RJH60 Abstract: PRSS0004ZE-A RJH60F0DPK SC-65 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF