Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    R07DS0234EJ0300 Search Results

    R07DS0234EJ0300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A curren9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		PDF RJH60F0DPK R07DS0234EJ0300 PRSS0004ZE-A