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KM416S4030BT-G10 Abstract: KMM366S424BTL-G0 KMM366S424BTL Text: KMM366S424BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.	Original	PDF	KMM366S424BTL 200mV. 66MHz KM416S4030BT-G10 KMM366S424BTL-G0 KMM366S424BTL
Untitled Abstract: No abstract text available Text: Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL KMM366S424BTL SDRAM DIMM	OCR Scan	PDF	KMM366S424BTL_ KMM366S424BTL KMM366S424BTL 366S424BTL 400mil 168-pin 54Max) 416S4030BT
KMM366S424BTL-G0 Abstract: KMM366S424BTL Text: KMM366S424BTL PC66 SDRAM MODULE KMM366S424BTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung	OCR Scan	PDF	KMM366S424BTL KMM366S424BTL 4Mx64 4Mx16, 400mil 168-pin KMM366S424BTL-G0
KMM366S424BTL-G0 Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT Text: TABLE OF CONTENTS \| I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .	OCR Scan	PDF	KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT