24N50
Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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26N50
ISOPLUS247TM
24N50
247TM
IXFR26N50
IXFR24N50
IXFH26N50
24N50
26N50
.24n50
IXFR24N50
IXFR26N50
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60n6
Abstract: 60N60 IC tl 072 IC100 60N60U1
Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600
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60N60U1
ISOPLUS247TM
IC100
60n6
60N60
IC tl 072
IC100
60N60U1
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TO247AD
Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions
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40N60C
ISOPLUS247TM
247TM
E153432
TO247AD
TO247AD package
40n60c
CoolMOS Power Transistor
ISOPLUS247
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50n50
Abstract: 55N50 150N50 IXFK55N50
Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR
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ISOPLUS247TM
50N50
55N50
247TM
IXFK55N50
50N50
55N50
150N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet
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58N20Q
ISOPLUS247TM
728B1
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150N15
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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ISOPLUS247TM
150N15
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70N15
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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70N15
ISOPLUS247TM
250ns
70N15
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IXGR40N60
Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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ISOPLUS247TM
40N60C
40N60CD1
IC110
E153432
728B1
IXGR40N60
40n60
40N60c
IXGR40N60CD1
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ixys cs 45-16 io1r
Abstract: CS 110 thyristor
Text: CS 45 Phase Control Thyristor VRRM = 800-1600 V 75 A IT RMS = IT(AV)M = 48 A VRSM VRRM VDSM VDRM V V Type 900 800 CS 45-08 io1 1300 1200 CS 45-12 io1 1700 1600 CS 45-16 io1 CS 45-16 io1R A C TO-247 AD ISOPLUS247TM Version io1 Version io1R C A G G h A (TAB)
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00-1600V
O-247
ISOPLUS247TM
20100203a
ixys cs 45-16 io1r
CS 110 thyristor
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IXGR50N160H1
Abstract: No abstract text available
Text: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGR50N160H1
IC110
ISOPLUS247TM
338B2
IXGR50N160H1
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34N80
Abstract: 34N8
Text: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ
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ISOPLUS247TM
34N80
247TM
E153432
34N8
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IXFR140N30
Abstract: No abstract text available
Text: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
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140N30P
ISOPLUS247TM
405B2
IXFR140N30
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44N50
Abstract: No abstract text available
Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions
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ISOPLUS247TM
44N50P
405B2
44N50
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40n60
Abstract: 40N60B2D1 40N60B2
Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
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ISOPLUS247TM
40N60B2
40N60B2D1
IC110
065B1
728B1
123B1
40n60
40N60B2D1
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
125OC
IXFR32N50
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44N50P
Abstract: ISOPLUS247
Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS
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44N50P
ISOPLUS247TM
03-21-06-B
44N50P
ISOPLUS247
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10N100
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt
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12N100Q
ISOPLUS247TM
10N100Q
12N100
10N104
IXFR10N100
IXFR12N100
10N100
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IXGH24N60CD1
Abstract: ISOPLUS247
Text: HiPerFASTTM IGBT with Diode 24N60CD1 VCES = 600 IC25 = 42 VCE sat = 2.5 IXGR ISOPLUS247TM V A V (Electrically Isolated Back Surface) Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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24N60CD1
ISOPLUS247TM
IXGH24N60CD1
ISOPLUS247
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IXYS TO-247 DATE CODE
Abstract: No abstract text available
Text: DSI45-16AR Standard Rectifier VRRM = 1600 V I FAV = 45 A VF = 1.23 V Single Diode Part number DSI45-16AR Backside: isolated 3 1 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop
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DSI45-16AR
ISOPLUS247
60747and
20130215a
IXYS TO-247 DATE CODE
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IXA17IF1200HJ
Abstract: No abstract text available
Text: IXA17IF1200HJ XPT IGBT VCES = 1200 V I C25 = 28 A VCE sat = 1.8 V Copack Part number IXA17IF1200HJ Backside: isolated 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: ISOPLUS247 ● Easy paralleling due to the positive temperature coefficient of the on-state voltage
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IXA17IF1200HJ
ISOPLUS247
60747and
20100623a
IXA17IF1200HJ
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Untitled
Abstract: No abstract text available
Text: IXA37IF1200HJ Advanced Technical Information XPT IGBT IC25 = 57 A VCES = 1200 V VCE sat typ = 1.8 V C ISOPLUS247 E72873 G G C E E Backside isolated Features / Advantages Applications • Easy paralleling due to the positive temperature coefficient of the on-state voltage
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IXA37IF1200HJ
ISOPLUS247â
E72873
20081119b
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Untitled
Abstract: No abstract text available
Text: IXGR 32N60C HiPerFASTTM IGBT Lightspeed Series VCE IC25 VCE sat typ tfi typ ISOPLUS247TM package (Electrically Isolated Back Side) = 600 V = 45 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V
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32N60C
ISOPLUS247TM
IC110
E153432
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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12N60C
ISOPLUS247TM
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Untitled
Abstract: No abstract text available
Text: IXKR 47N60C5 Advanced Technical Information COOLMOS * Power MOSFET VDSS = 600 V ID25 = 47 A RDS on max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM
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47N60C5
ISOPLUS247TM
E72873
20080225a
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