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    IXFR26N50 Search Results

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    IXFR26N50 Price and Stock

    IXYS Corporation IXFR26N50

    MOSFET N-CH 500V 26A ISOPLUS247
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    DigiKey IXFR26N50 Tube 30
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    Mouser Electronics IXFR26N50
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    IXYS Corporation IXFR26N50Q

    MOSFET N-CH 500V 24A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFR26N50Q Tube 30
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    IXFR26N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFR26N50 IXYS 200V HiPerFET power MOSFET Original PDF
    IXFR26N50Q IXYS 500V HiPerFET power MOSFET Original PDF
    IXFR26N50Q IXYS HiPerFET Power MOSFETs ISOPLUS247 Scan PDF

    IXFR26N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N50

    Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original
    PDF 26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50

    26N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original
    PDF 26N50 ISOPLUS247TM 24N50 24N50 IXFR26N50

    26N50

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family


    Original
    PDF ISOPLUS247TM 26N50 24N50 24N50 IXFR26N50

    26N50Q

    Abstract: IXFH26N50Q 24N50Q
    Text: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol


    Original
    PDF ISOPLUS247TM 26N50Q 24N50Q 24N50Q IXFR26N50Q IXFH26N50Q

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    26N50Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM VDSS ID25 RDS on 0.20 W 0.23 W 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol


    Original
    PDF 26N50Q ISOPLUS247TM 24N50Q 24N50Q IXFR26N50Q

    26n50q

    Abstract: ixfh26n50q IXFR26N50Q IXFR24N50Q 24n50q
    Text: HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q Electrically Isolated Back Surface VDSS ID25 500 V 24 A 500 V 22 A trr ≤ 250 ns RDS(on) 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol Test Conditions


    Original
    PDF 26N50Q ISOPLUS247TM 24N50Q 247TM E153432 IXFR26N50Q IXFR24N50Q IXFH26N50Q 26n50q IXFR26N50Q IXFR24N50Q 24n50q

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original
    PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    24n50

    Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250
    Text: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family


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    PDF ISOPLUS247â 26N50Q 24N50Q 26N50 24N50 IXFR26N50Q IXFH26N50Q A24N50 .24n50 ISOPLUS247 IXFR24N50Q SST250

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family


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    PDF ISOPLUS247â 26N50 24N50 IXFR26N50

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFR 26N50 ISOPLUS247™ V DSS p ^D25 500 V 24 A 500 V 22 A t^ <250 ns IXFR 24N50 Electrically Isolated Back Surface DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family


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    PDF 26N50 ISOPLUS247TM 24N50 24N50 247TM

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


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    PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50