12n60c
Abstract: transistor 12n60c IXGA 12N60C IXGA12N60C IXGP12N60C
Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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12N60C
O-263
O-220
728B1
transistor 12n60c
IXGA 12N60C
IXGA12N60C
IXGP12N60C
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES = 600 V IC25 = 15 A VCE(sat) = 2.1 V tfi(typ) = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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12N60C
ISOPLUS247TM
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12N60CD1
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600
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12N60CD1
12N60CD1
O-263
O-220
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12N60C
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms
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12N60C
O-247
O-247
12N60C
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Untitled
Abstract: No abstract text available
Text: IXGA 12N60C VCES = 600 V IXGP 12N60C IC25 = 24 A VCE sat = 2.7 V tfi(typ) = 55 ns HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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12N60C
O-263
O-220
728B1
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12N60CD1
Abstract: 12n60c
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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12N60CD1
728B1
12N60CD1
12n60c
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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12N60C
ISOPLUS247TM
728B1
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12n60c
Abstract: transistor 12n60c 98503B 12N60
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM
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12N60C
O-247
728B1
12n60c
transistor 12n60c
98503B
12N60
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IGBT g
Abstract: TO263AA
Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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12N60CD1
12N60CD1
O-220
O-263
IGBT g
TO263AA
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 15 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ISOPLUS247TM
12N60C
E153432
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12N60CD1
Abstract: IGBT g 12N60CD
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V
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12N60CD1
O-263
with055
12N60CD1
IGBT g
12N60CD
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12n60c
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGR 12N60C ISOPLUS247TM Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 15 A = 2.1 V = 55 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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ISOPLUS247TM
12N60C
E153432
12n60c
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12n60c
Abstract: transistor 12n60c ISOPLUS247
Text: HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGR 12N60C ISOPLUS247TM (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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12N60C
ISOPLUS247TM
728B1
12n60c
transistor 12n60c
ISOPLUS247
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IXGH 12N60CD1
Abstract: IXGH12N60CD1 12N60CD1
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES IC25 = = = = VCE sat tfi(typ) 600 V 24 A 2.1 V 55 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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12N60CD1
O-247
IXGH 12N60CD1
IXGH12N60CD1
12N60CD1
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12n60c
Abstract: IXGC 12N60C transistor 12n60c IXGA12N60C IXGC12N60CD1 12N60CD1
Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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12N60C
12N60CD1
ISOPLUS247TM
15FRED)
IXGC12N60CD1
728B1
123B1
728B1
065B1
12n60c
IXGC 12N60C
transistor 12n60c
IXGA12N60C
12N60CD1
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IXGC 12N60C
Abstract: 12N60C
Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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ISOPLUS247TM
12N60C
12N60CD1
ISOPLUS220TM
E153432
728B1
123B1
065B1
IXGC 12N60C
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12n60c
Abstract: 12N60
Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT VCES = 600 V IC25 = 15 A VCE sat = 2.7 V tfi(typ) = 55 ns IXGC 12N60C IXGC 12N60CD1 ISOPLUS247TM (Electrically Isolated Back Surface) IXGC IXGC - CD1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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ISOPLUS247TM
12N60C
12N60CD1
ISOPLUS220TM
728B1
123B1
065B1
12N60
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT LightspeedTM Series IXGA 12N60CD1 IXGP 12N60CD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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12N60CD1
O-263
728B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A
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12N60CD1
O-247
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information HiPerFAST IGBT Lightspeed™ Series IXGA 12N60CD1 IXGP 12N60CD1 600 V 24 A 2.1 V 55 ns V CES ^C25 V , CE sat Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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12N60CD1
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IXGA 12N60C
Abstract: No abstract text available
Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM
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12N60C
12N60C
O-263
O-220
IXGA 12N60C
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Untitled
Abstract: No abstract text available
Text: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ
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12N60C
to150
O-220
O-263
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C25 diode
Abstract: GE 0270
Text: nixY S Advanced Technical Information HiPerFAST IGBT IXGA 12N60CD1 VCES IXGP 12N60CD1 C25 V 24 A 2.1 V 120 ns V CE sat tf'(typ) oe 600 Gil OE Maximum Ratings Symbol Test Conditions V CES Tj =25°C to 150°C 600 V V CGR Tj = 25° C to 150° C; RGE= 1 MU
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12N60CD1
12N60CD1
O-220
O-263
C25 diode
GE 0270
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Untitled
Abstract: No abstract text available
Text: □ IXYS Advanced Technical Information H iP e r F A S T IG B T L ig h t s p e e d ™ S e r ie s IXGH 12N60CD1 Symbol TestC onditions Maximum Ratings V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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12N60CD1
O-247
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