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    70N1 Search Results

    70N1 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    NP70N10KUF-E1-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP70N10KUF-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP70N10KUF-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive, MP-25ZK, /Embossed Tape Visit Renesas Electronics Corporation
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    70N1 Price and Stock

    Infineon Technologies AG BSC070N10NS5ATMA1

    MOSFET N-CH 100V 80A TDSON
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    DigiKey BSC070N10NS5ATMA1 Reel 30,000 5,000
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    Newark BSC070N10NS5ATMA1 Cut Tape 2,117 1
    • 1 $1.84
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    Rochester Electronics BSC070N10NS5ATMA1 776,082 1
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    Chip1Stop BSC070N10NS5ATMA1 Cut Tape 4,800
    • 1 $1.78
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    EBV Elektronik BSC070N10NS5ATMA1 21 Weeks 5,000
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    Win Source Electronics BSC070N10NS5ATMA1 88,800
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    Nisshinbo Micro Devices RP170N121B-TR-FE

    IC REG LINEAR 1.2V 300MA SOT23-5
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    DigiKey RP170N121B-TR-FE Digi-Reel 3,060 1
    • 1 $0.44
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    RP170N121B-TR-FE Cut Tape 3,060 1
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    RP170N121B-TR-FE Reel 3,000 3,000
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    Rochester Electronics RP170N121B-TR-FE 33,000 1
    • 1 $0.2361
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    • 100 $0.2219
    • 1000 $0.2007
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    Microchip Technology Inc ATSAMV70N19B-AAB

    IC MCU 32BIT 512KB FLASH 100LQFP
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    DigiKey ATSAMV70N19B-AAB Tray 1,252 1
    • 1 $11.33
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    Microchip Technology Inc ATSAMV70N19B-AAB Tray 4,320 7 Weeks
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    NAC ATSAMV70N19B-AAB Tray 3,420 1
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    Avnet Silica ATSAMV70N19B-AAB 6 Weeks 90
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    Master Electronics ATSAMV70N19B-AAB
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    Win Source Electronics ATSAMV70N19B-AAB 2,000
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    • 100 $13.929
    • 1000 $13.929
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    Goford Semiconductor GT070N15M

    MOSFET N-CH 150V 140A 320W TO-26
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    DigiKey GT070N15M Digi-Reel 795 1
    • 1 $4.05
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    GT070N15M Cut Tape 795 1
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    Microchip Technology Inc ATSAME70N19B-CN

    IC MCU 32BIT 512KB FLSH 100TFBGA
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    DigiKey ATSAME70N19B-CN Tray 516 1
    • 1 $13.08
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    Mouser Electronics ATSAME70N19B-CN 1,430
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    Microchip Technology Inc ATSAME70N19B-CN Tray 1,058 8 Weeks
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    NAC ATSAME70N19B-CN Tray 520 1
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    Avnet Silica ATSAME70N19B-CN 10 Weeks 260
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    Master Electronics ATSAME70N19B-CN
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    Find more 70N1 price and stock on Findchips.com

    70N1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    70N-10A Cooper Bussmann Fuses, 300VDC -1/10-10A Telpower Indicating Fuses Original PDF
    70N15A Nihon Dempa Kogyo CRYSTAL FILTER Original PDF
    70N15BR Nihon Dempa Kogyo CRYSTAL FILTER Original PDF

    70N1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    70N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 70N15 ISOPLUS247TM 250ns 70N15

    70N10L

    Abstract: SPB70N10L SPP70N10L 160-240V SPP70
    Text: Preliminary Data SPP 70N10L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.016 Ω Continuous drain current ID Enhancement mode • Avalanche rated 100 V 70 A • Logic Level


    Original     		PDF 70N10L SPP70N10L P-TO220-3-1 Q67040-S4175 SPB70N10L P-TO263-3-2 Q67040-S4170 70N10L SPB70N10L SPP70N10L 160-240V SPP70

    70n15

    Abstract: 52RG
    Text: IXFH 70N15 IXFT 70N15 HiPerFETTM Power MOSFETs VDSS ID25 = 150 V = 70 A Ω = 28 mΩ RDS on trr ≤ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 70N15 250ns O-247 O-268 728B1 70n15 52RG

    70N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 70N15 ISOPLUS247TM 250ns

    70N15A

    Abstract: 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA
    Text: #5. P179-198 02.2.5 4:14 PM ページ 184 CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth


    Original     		PDF P179-198 90MHZ 70MHz, 70N15A fo-910kHz) D-360-A 70N15BR D-360-B 70N20A 70N15A 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 70N15 IXFT 70N15 VDSS ID25 RDS on trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 70N15 70N15 250ns O-247 O-268 O-268AA

    Untitled

    Abstract: No abstract text available
    Text: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple


    Original     		PDF 90MHz 70MHz, 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A

    70N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 70N15 IXFT 70N15 VDSS ID25 RDS on trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 70N15 250ns O-247 70N15

    70N15

    Abstract: TO268
    Text: Advanced Technical Information IXFH 70N15 IXFT 70N15 HiPerFETTM Power MOSFETs VDSS ID25 RDS on trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 70N15 70N15 250ns O-247 O-268 O-268 TO268

    90N8B

    Abstract: 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N20BC 90N26BA
    Text: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth Attenuation Bandwidth Ripple (dB) (kHz) (dB)


    Original     		PDF 90MHz 70MHz, 70N15A fo-910kHz) D-360-A 70N15BR D-360-B 70N20A 90N8B 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N20BC 90N26BA

    Untitled

    Abstract: No abstract text available
    Text: 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple


    Original     		PDF 90MHZ 70MHz, 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N8B

    70N15

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C


    Original     		PDF 70N15 ISOPLUS247TM 250ns

    70N15A

    Abstract: 90N20A 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N26BA
    Text: CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth Attenuation Bandwidth Ripple


    Original     		PDF 90MHZ 70MHz, 70N15A fo-910kHz) D-360-A 70N15BR D-360-B 70N20A 70N15A 90N20A 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N26BA

    D1804

    Abstract: 70n10 data sheet 70N10 NP70N10KUF NP70N10KUF-E1-AZ NP70N10KUF-E2-AZ NEC+70N10
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    STW70N10F4

    Abstract: 70n10f4 STP70N10F4 STD70N10F4 STd70N10 70N10
    Text: 70N10F4 70N10F4, 70N10F4 N-channel 100 V, 0.015 Ω, 60 A TO-220, DPAK, TO-247 STripFET DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 70N10F4 100 V < 0.0195 Ω 60 A 70N10F4 100 V < 0.0195 Ω 65 A 70N10F4 100 V < 0.0195 Ω


    Original     		PDF STD70N10F4 STP70N10F4, STW70N10F4 O-220, O-247 STP70N10F4 O-220 STW70N10F4 70n10f4 STP70N10F4 STD70N10F4 STd70N10 70N10

    FUSE 500mA 125V SMT

    Abstract: WAGO 281 FUSE 500mA 250V SMT FUSE 3A 125V SMT GKB. 1 2 3 Dimension Bus Bar torque for metric bolts Ea 1530A tpl-b fuse block lucent comcode ARROW-HART
    Text: TELPOWER Overcurrent Protection Solutions For The Global Telecommunications Market Bussmann ® Worldwide Circuit Protection Solutions The Right Choice For Telecommunications World’s leading supplier of fuses and fusible protection systems is also the manufacturer of the


    Original     		PDF 80-year 03-01-8M FUSE 500mA 125V SMT WAGO 281 FUSE 500mA 250V SMT FUSE 3A 125V SMT GKB. 1 2 3 Dimension Bus Bar torque for metric bolts Ea 1530A tpl-b fuse block lucent comcode ARROW-HART

    Untitled

    Abstract: No abstract text available
    Text: 70N10F3 N-channel 100 V, 0.0078 Ω, 16 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max @VGS=10V 70N10F3 100 V 0.0084 Ω • Improved die-to-footprint ratio ■ Very low thermal resistance


    Original     		PDF STL70N10F3

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Text: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		PDF B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter

    TLE 5025

    Abstract: automatic brake failure indicator and engine heating alarm radar 77 ghz tda 7718 Bosch radar bosch injectors bosch throttle position bosch fuel pressure sensor bosch alternator bosch hall ignition
    Text: Driving the Future of Automotive Electronics Automotive system solutions [ www.infineon.com/automotive ] 2 2 Contents Challenges and Trends 4 Safety System Solutions 6 Body & Convenience System Solutions 12 Powertrain System Solutions 18 Electrified Powertrain System Solutions


    Original     		PDF of048 B112-H9279-X-X-7600 TLE 5025 automatic brake failure indicator and engine heating alarm radar 77 ghz tda 7718 Bosch radar bosch injectors bosch throttle position bosch fuel pressure sensor bosch alternator bosch hall ignition

    70N10

    Abstract: 60N10 JESD97 STD60N10 STP70N10
    Text: STD60N10 70N10 N-channel 100 V - 0.016 Ω - 60 A TO-220 / DPAK low RDS on Power MOSFET Preliminary Data Features • Type VDSS RDS(on)max ID STD60N10 100 V <0.0195 Ω 60 A 70N10 100 V <0.0195 Ω 65 A Exceptional dv/dt capability 3 3 1 ■ Extremely low on-resistance RDS(on)


    Original     		PDF STD60N10 STP70N10 O-220 O-220 70N10 70N10 60N10 JESD97 STD60N10 STP70N10

    Untitled

    Abstract: No abstract text available
    Text: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n


    OCR Scan     		PDF 70N10L SPP70N10L SPB70N10L P-T0220-3-1 Q67040-S4175 P-T0263-3-2 Q67040-S4170 S35bQ5 Q133777 SQT-89

    Untitled

    Abstract: No abstract text available
    Text: Advanced S S F 70N10A Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175oC Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V


    OCR Scan     		PDF 175oC SSF70N10A

    LD25

    Abstract: L1047
    Text: IZIIXYS Advanced Technical Information V.DSS IXFH 70N15 IXFT 70N15 HiPerFET Power MOSFETs D25 ^DS on = 150 V = 70 A = 28 mQ t rr < 250ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Maximum Ratings Symbol Test Conditions V Td = 25°C to 150°C


    OCR Scan     		PDF 70N15 250ns O-247AD O-268 LD25 L1047