to-268
Abstract: DA-T263-101E-TR 686m
Text: HEATSINK D Series Ohmite D Series heatsinks provide an innovative solution for SMT compatible semiconductors and resistors. The unique design Patent Pending combines tin plated, solderable rods with an aluminum extruded heat sink body. These rods (or “rollers”)
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O-252,
O-263
O-268
1-866-9-OHMITE
to-268
DA-T263-101E-TR
686m
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IXTT16P60P
Abstract: IXTH16P60P 16P60P
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH16P60P IXTT16P60P VDSS ID25 = = ≤ RDS on TO-268 (IXTT) P-Channel Enhancement Mode Avalanche Rated G Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH16P60P
IXTT16P60P
O-268
100ms
16P60P
IXTT16P60P
IXTH16P60P
16P60P
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50n60b
Abstract: 50n60 50N6 IXGH50N60B
Text: HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 = 600 = 75 = 2.3 VCE sat tfi(typ) = 120 V A V ns TO-247 AD (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60B
O-247
O-247AD
728B1
50n60b
50n60
50N6
IXGH50N60B
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Untitled
Abstract: No abstract text available
Text: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous
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15N120C
O-247
O-268
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17n80
Abstract: 17N80Q
Text: HiPerFETTM Power MOSFETs IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS on Q-Class = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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17N80Q
O-268
728B1
123B1
728B1
065B1
17n80
17N80Q
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20N60B
Abstract: s9011
Text: HiPerFASTTM IGBT IXGH 20N60B IXGT 20N60B VCES IC25 VCE sat typ tfi(typ) = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient
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20N60B
O-24s
20N60B
s9011
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58N2
Abstract: 58N20
Text: HiPerFETTM Power MOSFETs IXFH 58N20Q IXFT 58N20Q VDSS ID25 RDS on Q-Class = 200 V = 58 A = 40 mW trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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58N20Q
O-268
O-268
58N2
58N20
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ixf26n50q
Abstract: 24N50 26N50Q 125OC ixf26N50
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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24N50Q
26N50Q
125OC
728B1
ixf26n50q
24N50
26N50Q
125OC
ixf26N50
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igbt induction cooker
Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
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28N120B
IC110
O-268
O-247
728B1
123B1
728B1
065B1
28N120B
igbt induction cooker
induction cooker application notes
siemens igbt
IXGH 28N120B
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80N10
Abstract: 80N10Q
Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C
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80N10Q
200ns
O-247
80N10
80N10Q
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10N170
Abstract: BiMOSFET
Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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10N170
728B1
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065B1
10N170
BiMOSFET
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28n60
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES IC25 VCE(sat) = 600 V = 40 A = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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28N60BD1
O-247
728B1
123B1
728B1
065B1
28n60
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60n10
Abstract: IXTH60N10
Text: Advance Technical Information IXTH 60N10 IXTT 60N10 HiPerFETTM Power MOSFETs VDSS ID25 = 100 V = 60 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
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60N10
TJM15
O-268
728B1
123B1
728B1
065B1
60n10
IXTH60N10
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IXFH23N80Q
Abstract: transistor N 343 AD
Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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IXFT23N80Q
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transistor N 343 AD
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application notes IXGH 6N170
Abstract: 6N170
Text: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25
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6N170
O-247
O-268
728B1
application notes IXGH 6N170
6N170
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125OC
Abstract: 32N50Q
Text: IXFJ 32N50Q VDSS HiPerFETTM Power MOSFETs ID cont RDS(on) trr Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family = 500 = 32 = 0.15 < 250 V A W ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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32N50Q
32N50Q
125OC
125OC
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IXGH32N60C
Abstract: 32N60C IXGH32N60
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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32N60C
IC110
O-268
O-247
IXGH32N60C
32N60C
IXGH32N60
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10N170
Abstract: No abstract text available
Text: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V
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10N170
O-247
O-268
728B1
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40N30Q
Abstract: IXYS 40N30Q
Text: HiPerFETTM Power MOSFETs IXFH 40N30Q IXFT 40N30Q Q-Class VDSS ID25 = 300 V = 40 A = 80 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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40N30Q
O-268
40N30Q
IXYS 40N30Q
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50n30
Abstract: N-channel MOSFET to-247 50a IXTH50N30 TO-247 weight
Text: Advance Technical Information IXTH 50N30 IXTT 50N30 High Current Power MOSFET VDSS ID25 = 300 V = 50 A Ω = 65 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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50N30
O-247
O-268
728B1
123B1
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50n30
N-channel MOSFET to-247 50a
IXTH50N30
TO-247 weight
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13N50
Abstract: 125OC FIGURE10
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient
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13N50
Figure10.
125OC
FIGURE10
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28N50F
Abstract: 28N50
Text: Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching IXFH 28N50F VDSS IXFT 28N50F ID25 RDS on = 500V = 28A Ω = 190mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
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28N50F
O-247
728B1
28N50
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24N170
Abstract: No abstract text available
Text: Advance Technical Data High Voltage IGBT IXGH 24N170 VCES IXGT 24N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V
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24N170
O-247
O-268
728B1
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28N60B
Abstract: em 404
Text: Low VCE sat IGBT IXGH 28N60B IXGT 28N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 28 A ICM TC = 25°C, 1 ms
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28N60B
O-247
O-268
28N60B
em 404
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