AD211
Abstract: AD211 QFN 63dBc 2way splitter 839 SMD
Text: E-pHEMT MMIC AD211 Product Features Application • 2-Way Splitter • Small size 3X3 mm • QFN SMD Type package • Higher productivity • Lower manufacturing cost • -63dBc CSO 135 Channels @ +15dBmV/ch • -73dBc CTB 135 Channels @ +15dBmV/ch • -65dBc XMD 135 Channels @ +15dBmV/ch
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AD211
-63dBc
15dBmV/ch
-73dBc
-65dBc
AD211
AD211 QFN
63dBc
2way splitter
839 SMD
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AE512
Abstract: AE312 mmic transistor E5 smd mmic transistor E5
Text: E-pHEMT MMIC AE512 Preliminary Product Features Application • Small size • 30MHz-2150MHz • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost • Low Noise Figure • -65dBc CSO 79 Channels @ +30dBmV/ch
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AE512
30MHz-2150MHz
-65dBc
30dBmV/ch
-61dBc
AE312
OT-89
mmic transistor E5
smd mmic transistor E5
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CLC110
Abstract: CLC110A8D CLC110AJE CLC110AJP CLC110ALC CLC110AMC
Text: N Comlinear CLC110 Wideband, Closed-Loop Monolithic Buffer Amplifier General Description Features • ■ ■ ■ ■ Closed-loop, unity-gain operation -3dB bandwidths of 730MHz 0.5Vpp 0.2% settling in 5ns Low power, 150mW Low distortion, -65dBc at 20MHz
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CLC110
730MHz
150mW
-65dBc
20MHz
CLC110AJP
CLC110AJE
CLC110ALC
CLC110AMC
CLC110A8D
CLC110
CLC110AJE
CLC110AJP
CLC110ALC
CLC110AMC
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RFCA3302
Abstract: RFCA3 RFCA3302SR GRM1555C1H101JA01 85C80
Text: RFCA3302 LINEAR CATV 40MHz TO 1008MHz GAAS AMPLIFIER Package Style: SOT-89 Features High gain: 21dB High linearity and low distortion • 40dBm IP3 • -65dBc CSO • -83dBc CTB Single +5V supply Applications Broadband 75 Gain Block
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RFCA3302
40MHz
1008MHz
OT-89
40dBm
-65dBc
-83dBc
RFCA3302
RFCA3
RFCA3302SR
GRM1555C1H101JA01
85C80
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Advanced RFIC
Abstract: No abstract text available
Text: ARF80001-a IP SPECIFICATIONS 2.45GHz Transmitter/Receiver Switch ARF80001-a KEY FEATURES • • • • • • • • RF frequency range : 2.35GHz to 2.65GHz Supply voltage : 3V to 3.3V Insertion loss : 3.0dB Isolation: >32dB 2nd harmonic compression: 65dBc
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ARF80001-a
45GHz
35GHz
65GHz
65dBc
68dBc
844um
496um
AF80001
Advanced RFIC
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AE314
Abstract: No abstract text available
Text: E-pHEMT MMIC AE314 Product Features Application • Small size • 30MHz-2655MHz • Higher Gain • Higher linearity • SOT-89 SMD Type package • Higher productivity • Lower manufacturing cost • -65dBc CSO 135 Channels @ +20dBmV/ch • -70dBc CTB 135 Channels @ +20dBmV/ch
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AE314
30MHz-2655MHz
OT-89
-65dBc
20dBmV/ch
-70dBc
-85dBc
OT-89
AE314
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smd transistor AJp 65
Abstract: CLC110 CLC110AJE CLC110AJP SMD Transistor AJE smd AJp 65
Text: N CLC110 Wideband, Closed-Loop Monolithic Buffer Amplifier General Description Features • ■ ■ ■ ■ Closed-loop, unity-gain operation -3dB bandwidths of 730MHz 0.5Vpp 0.2% settling in 5ns Low power, 150mW Low distortion, -65dBc at 20MHz Applications
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CLC110
730MHz
150mW
-65dBc
20MHz
CLC110AJP
CLC110AJE
CLC110
smd transistor AJp 65
SMD Transistor AJE
smd AJp 65
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Untitled
Abstract: No abstract text available
Text: RFCA3302 LINEAR CATV 40MHz TO 1008MHz GAAS AMPLIFIER Package Style: SOT-89 Features High gain: 21dB High linearity and low distortion • 40dBm IP3 • -65dBc CSO • -83dBc CTB Single +5V supply Applications Broadband 75 Gain Block
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RFCA3302
40MHz
1008MHz
OT-89
40dBm
-65dBc
-83dBc
RFCA3302
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AD311
Abstract: No abstract text available
Text: E-pHEMT MMIC AD311 Product Features Application • 3-Way Splitter • Small size 3X3 mm • QFN SMD Type package • Higher productivity • Lower manufacturing cost • -63dBc CSO 135 Channels @ +15dBmV/ch • -72dBc CTB 135 Channels @ +15dBmV/ch • -65dBc XMD 135 Channels @ +15dBmV/ch
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AD311
-63dBc
15dBmV/ch
-72dBc
-65dBc
AD311
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ACQ102
Abstract: No abstract text available
Text: E-pHEMT MMIC ACQ102 Product Features Application • Small size 4X4 mm • Higher Gain • Higher linearity • PQFN SMD Type package • Higher productivity • Lower manufacturing cost • -60dBc CSO 135 Channels @ +30dBmV/ch • -65dBc CTB 135 Channels @ +30dBmV/ch
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ACQ102
-60dBc
30dBmV/ch
-65dBc
-63dBc
ACQ102
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Frequency multiplier 1mHz 10MHz
Abstract: No abstract text available
Text: EURO QUARTZ Frequency range 50.01MHz to 800MHz LVCMOS Output Supply Voltage 3.3 VDC High Q fundamental mode crystal Low jitter multiplier circuit GW64 CMOS VCXO 11.4 x 9.6 x 4.7mm 6 pad SMD OUTLINE & DIMENSIONS DESCRIPTION GW64 VCXOs, are packaged in an industry-standard, 6 pad, 11.4mm
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01MHz
800MHz
20ppm
100Hz
10kHz
100kHz
10MHz
25MHz
-65dBc/Hz
-95dBc/Hz
Frequency multiplier 1mHz 10MHz
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RLC Filter Design
Abstract: ADS5121 MPA4609 MPA4609IPFBR MPA4609IPFBT OPA2846 TQFP-48 piezoelectric film sensor "Piezoelectric Sensor"
Text: MPA4609 MP A46 09 www.ti.com SBOS252E – AUGUST 2002 – REVISED DECEMBER 2008 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252E
MPA4609
RLC Filter Design
ADS5121
MPA4609IPFBR
MPA4609IPFBT
OPA2846
TQFP-48
piezoelectric film sensor
"Piezoelectric Sensor"
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AD9765
Abstract: IS-136 ISL5829 ISL5829EVAL1 ISL5829IN
Text: ISL5829 TM Data Sheet February 2002 Dual 12-bit, +3.3V, 130/210+MSPS, CommLinkTM High Speed D/A Converter FN6020.1 Features • Speed Grades . . . . . . . . . . . . . . . . 130M and 210+MSPS The ISL5829 is a dual 12-bit, 130/210+MSPS Mega Samples Per Second , CMOS, high speed,
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ISL5829
12-bit,
FN6020
ISL5829
233mW
130MSPS
AD9765
IS-136
ISL5829EVAL1
ISL5829IN
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Untitled
Abstract: No abstract text available
Text: MPA4609 MP A46 09 www.ti.com SBOS252E – AUGUST 2002 – REVISED DECEMBER 2008 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252E
90MHz
90V/V
65nV/Hz
TQFP-48
MPA4609
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Guide for Common Mode Filter Design Coilcraft
Abstract: 0603CS LTC2208 LTC6400 LTC6401 LTC6401-20 LTC6401CUD-8 LTC6401IUD-8 g1318 LT 735
Text: LTC6401-8 2.2GHz Low Noise, Low Distortion Differential ADC Driver for DC-140MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 2.2GHz –3dB Bandwidth Fixed Gain of 2.5V/V 8dB –92dBc IMD3 at 70MHz (Equivalent OIP3 = 50dBm)
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LTC6401-8
DC-140MHz
92dBc
70MHz
50dBm)
140MHz
44dBm)
135mW)
16-Lead
LT6600-5
Guide for Common Mode Filter Design Coilcraft
0603CS
LTC2208
LTC6400
LTC6401
LTC6401-20
LTC6401CUD-8
LTC6401IUD-8
g1318
LT 735
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Untitled
Abstract: No abstract text available
Text: EURO QUARTZ GW576 CMOS VCXO 7 x 5 x 1.8mm 6 pad SMD Frequency range 50.01MHz to 800MHz LVCMOS Output Supply Voltage 3.3 VDC High Q fundamental mode crystal Low jitter multiplier circuit DESCRIPTION GW576 VCXOs, are packaged in an industry-standard, 6 pad, 7mm x
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GW576
01MHz
800MHz
96MHz
20ppm
100Hz
10kHz
100kHz
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piezoelectric amplifier
Abstract: N 1114c RLC Filter Design
Text: MPA4609 MP A46 09 SBOS252D – AUGUST 2002 – REVISED MARCH 2005 Quad, Differential I/O, 2X1 Multiplexed High Gain Preamp FEATURES DESCRIPTION ● ● ● ● ● ● ● ● The MPA4609 is one of the lowest noise, fixed gain, 5V single-supply, differential amplifiers available for amplification of low-level signals in a variety of system applications.
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MPA4609
SBOS252D
90MHz
90V/V
65nV/Hz
TQFP-48
MPA4609
piezoelectric amplifier
N 1114c
RLC Filter Design
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LASER DIODES ML7XX4 SERIES InGaAsP—MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION ML7XX4 series are MQW* —DFB*' laser diodes emitting •E xcellent low distortion characteristic CSO typical-60dBc/CTB typical-65dBc light beam around 1310nm.
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typical-60dBc/CTB
typical-65dBc
1310nm.
78-channel
ML7924
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FLD130F3ACH-AL
Abstract: FLD130 130F3ACHAL
Text: InGaAsP/lnP LASER DIODE MODULE FEA T U R ES • Very low distortions good linearity CSO = -65dBc (typical) CTB = -70dBc (typical) (on 40 channels loading) • Low noise RIN = -155dB/Hz (typical) • High output power Pf = 4mW • High slope efficiency S = 0.15 mW/mA (typical)
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130F3ACHAL
-65dBc
-70dBc
-155dB/Hz
600MHz
14pin
FLD130F3ACH-AL
40channels
37MT7Sb
FLD130
130F3ACHAL
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rf amplifier 100w
Abstract: "RF Power" amplifier 100w 200W AMPLIFIER POWER AMPLIFIER power rf
Text: DAICG Industries DAMH9172 H ig h - P o w e r A m p lif ie r Operating Frequency: L-Band RF Power: 200W/100W Gain: 43/40dB & *1» Pulse Width: 320 microseconds Duty Cycle: 10% Spurious: 65dBc ,tIN ,1V«' Voltage: 48V/28V Operating Temperature: -40 to +71 degrees C
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H9172
00W/100W
43/40dB
65dBc
8V/28V
rf amplifier 100w
"RF Power"
amplifier 100w
200W AMPLIFIER
POWER AMPLIFIER
power rf
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OD-S559
Abstract: 1310nm 2mW nec
Text: I NEC OD - S 5 5 9 131 Onm D F B - L D w i t h b u i l t - i n Mo d u 1 e o p t i c a l FEATURES • Operating frequency range • Distortion i s o l a t o r f=5MHz to 200MHz IM D2i-45dBc IMD35-65dBc RINS-145dB/Hz Pf=2.0mW A=1310nm Tc=-20 to 85°C • Noise
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200MHz
IMD2i-45dBc
IMD35-65dBc
RINS-145dB/Hz
1310nm
85MHz,
25MHz
bM27S25
OD-S559
OD-S559
1310nm 2mW nec
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Untitled
Abstract: No abstract text available
Text: DAC65 ADVANCE INFORMATION SUBJECT TO CHANGE • FAST SETTLING: 35ns 0.012% • DIRECT DIGITAL FREQUENCY SYNTHESIZERS • INTEGRAL LINEARITY ERROR: 1/4 LSB • DIFFERENTIAL LINEARITY ERROR: 1/4 LSB • FAST ATE SYSTEMS • HIGH SPECTRAL PURITY: -65dBC • HIGH-RESOLUTION VIDEO GRAPHICS
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DAC65
12-Bit
-65dBC
24-PIN
DAC65
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S9750
Abstract: No abstract text available
Text: TOSHIBA POWER GaAs MMIC MICROW AVE SEMICONDUCTOR S9750 TECHNICAL DATA PRELIMINARY FEATURES : • HIGH POWER P o - 2 8 dBm <9 Pin - 8 dBm HIGH GAIN Gp >20d8 3> Pin - 8 dBm ■ SUPER LOW DISTORTION Pad] — 65dBc @ P o - 2 7 dBm, 600 kHz offset INPUT/OUTPUT PORT MATCHED TO 50 Q
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Po-28dBm
-20d8
65dBc
-27dBm,
600kHz
S9750
S9750
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OD-S559
Abstract: 1310nm 2mW nec
Text: NEC 1 OD - S 5 5 9 131 O n m w i t h D F B - LD b u i l t - i n Mo d u 1 e o p t i c a l FEATURES • Operating frequency range • Distortion i s o l a t o r f=5MHz to 200MHz IM D2i-45dBc IMD35-65dBc RINS-145dB/Hz Pf=2.0mW A=1310nm Tc=-20 to 85°C • Noise
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200MHz
IMD2i-45dBc
IMD35-65dBc
-145dB/Hz
1310nm
13MHz,
19MHz,
32NHz
25MHz
OD-S559
1310nm 2mW nec
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