Untitled
Abstract: No abstract text available
Text: LM49370 www.ti.com SNAS356D – FEBRUARY 2007 – REVISED MARCH 2012 LM49370 Boomer Audio Power Amplifier Series Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
|
Original
|
PDF
|
LM49370
SNAS356D
LM49370
18-bit
16-bit
|
6SE70
Abstract: No abstract text available
Text: LM4947, LM4947TLEVAL www.ti.com LM4947 SNAS349D – JUNE 2006 – REVISED MAY 2013 Mono Class D and Stereo Audio Sub-System with OCL Headphone Amplifier and TI 3D Check for Samples: LM4947, LM4947TLEVAL FEATURES 1 • • 2 • • • • • • • •
|
Original
|
PDF
|
LM4947,
LM4947TLEVAL
SNAS349D
LM4947
LM4947
500mW
6SE70
|
Untitled
Abstract: No abstract text available
Text: LM4935, LM4935RLEVAL www.ti.com SNAS296E – OCTOBER 2005 – REVISED MAY 2013 LM4935 Boomer Audio Power Amplifier Series Audio Sub-System with Dual-Mode Stereo Headphone & Mono High Efficiency Loudspeaker Amplifiers and Multi-Purpose ADC Check for Samples: LM4935, LM4935RLEVAL
|
Original
|
PDF
|
LM4935,
LM4935RLEVAL
SNAS296E
LM4935
18-Bit
16-Bit
12-Bit
|
2SB1424
Abstract: 2SD2150 T100
Text: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1
|
Original
|
PDF
|
2SD2150
2SB1424.
SC-62
2SB1424
2SD2150
T100
|
lm4935
Abstract: No abstract text available
Text: LM4935, LM4935RLEVAL www.ti.com SNAS296E – OCTOBER 2005 – REVISED MAY 2013 LM4935 Boomer Audio Power Amplifier Series Audio Sub-System with Dual-Mode Stereo Headphone & Mono High Efficiency Loudspeaker Amplifiers and Multi-Purpose ADC Check for Samples: LM4935, LM4935RLEVAL
|
Original
|
PDF
|
LM4935,
LM4935RLEVAL
SNAS296E
LM4935
|
2SA1585S
Abstract: 2SC4115S SC-72
Text: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2
|
Original
|
PDF
|
2SC4115S
2SA1585S.
15Min.
SC-72
2SA1585S
2SC4115S
SC-72
|
2SD2264
Abstract: No abstract text available
Text: 2SD2264 Transistors Low Frequency Transistor 20V, 3A 2SD2264 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 2SD2264 2.5±0.2 0.65Max. zStructure Epitaxial planar type
|
Original
|
PDF
|
2SD2264
65Max.
2SD2264
|
E50U
Abstract: c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A
Text: 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics
|
Original
|
PDF
|
2SD2150
OT-89
E50U
c2a marking
2SD2150
sot89 "NPN TRANSISTOR"
marking C2A
|
2SC4115S
Abstract: No abstract text available
Text: 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W Tamb=25 I CM: 15.3 ±0.2 Collector current
|
Original
|
PDF
|
2SC4115S
O-92S
2SC4115S
|
2SB1424
Abstract: 2SD2150 T100
Text: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1
|
Original
|
PDF
|
2SD2150
2SB1424.
SC-62
2SB1424
2SD2150
T100
|
Untitled
Abstract: No abstract text available
Text: LM49370 www.ti.com SNAS356D – FEBRUARY 2007 – REVISED MARCH 2012 LM49370 Boomer Audio Power Amplifier Series Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
|
Original
|
PDF
|
LM49370
SNAS356D
LM49370
18-bit
16-bit
|
2SB1424
Abstract: 2SD2150 T100
Text: Low Frequency Transistor 20V, 3A 2SD2150 zDimensions(Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2
|
Original
|
PDF
|
2SD2150
2SB1424.
SC-62
R0039A
2SB1424
2SD2150
T100
|
2SA1585S
Abstract: 2SC4115S SC-72
Text: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) ̈́IC / IB = 2A / 0.1Aͅ 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2
|
Original
|
PDF
|
2SC4115S
2SA1585S.
15Min.
SC-72
2SA1585S
2SC4115S
SC-72
|
Untitled
Abstract: No abstract text available
Text: Low Frequency Transistor 20V, 3A 2SD2150 zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. zDimensions(Unit : mm) 2SD2150 0.5±0.1 4.5+0.2 −0.1 4.0±0.3 2.5+0.2
|
Original
|
PDF
|
2SD2150
2SB1424.
SC-62
R0039A
|
|
|
Untitled
Abstract: No abstract text available
Text: Motor driver ICs PNP transistor array BA6254FS The BA6254FS has been developed as a low-saturation output, upper-side transistor array for iow-voltage m otor drive applications. The three PNP transistors have a common emitter. •A p p lic a tio n s Motor drivers
|
OCR Scan
|
PDF
|
BA6254FS
BA6254FS
150upply
-5m-10m
-50m-100m-200ni-500m
|
Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA114EE/DTA114EUA/DTA114E KA/DTA114ESA •F e a tu re s • E x te rn a l dim ensions (Units: mm) 1) B u ilt-in bias re s is to rs e n a b le th e con figu ration o f an inverter circu it DTA114EE 1.0 ± 0.1
|
OCR Scan
|
PDF
|
DTA114EE/DTA114EUA/DTA114E
KA/DTA114ESA
DTA114EE
DTA114EKA
DTA114ECA
DTA114ESA
DTA114EE/DTA114EUA/DTA114EKA/DTA114ESA
-200/i
-5m-10m
-50m-100m
|
catalogue de transistor
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA •F eatu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola
|
OCR Scan
|
PDF
|
DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA
DTA114YE
DTA114YUA
catalogue de transistor
|
5490A
Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
|
OCR Scan
|
PDF
|
2SB798
2SD999
5490A
B 1359
970-900
2SD999
IEI-1213
MEI-1202
MF-1134
marking dk sot-89
|
IEI-1213
Abstract: MF-1134 MEI-1202 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB799 ml 1134 2SD1000 quality assurance for semiconductor devices NEC IR SOT89 transistor marking MK
Text: DATA SHEET SILICON TRANSISTOR 2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 799 is designed fo r audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package
|
OCR Scan
|
PDF
|
2SB799
2SB799
IEI-1213
MF-1134
MEI-1202
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
ml 1134
2SD1000
quality assurance for semiconductor devices
NEC IR
SOT89 transistor marking MK
|
Untitled
Abstract: No abstract text available
Text: General Purpose Metal Film Resistors GMF4 series ELECTRICAL DATA GMF4 Power rating at 70 °C Watts 0.25 Resistance range Ohms 1 - 10M Limiting element voltage Volts ppm/°C TCR 250 <1M:150 >1M-5M:300 % Resistance tolerance code >5M-10M:500 5 E24 preferred
|
OCR Scan
|
PDF
|
5M-10M
|
100K-200K
Abstract: UPC253A uPC253
Text: MPC253 Programmable Operational Amplifier G EN ERAL DESCRIPTION juPC253 is a high performance programmable opera tional amplifier designed for many low power applica tions like handy DMM. The quiescent current can be set by a single external resistor and this feature enables
|
OCR Scan
|
PDF
|
uPC253
juPC253
100k200k
5M10M
100K-200K
UPC253A
uPC253
|
c114e
Abstract: transistors for power FMC3
Text: Transistors UMC3N/FMC3A Digital Transistor Dual Digital Transistors for Power Management UMC3 N / FMC3 A •F e a tu re s • E x te r n a l dim ensions (Units: mm ) 1 ) T w o d ig ita l transistors, D T A 1 14E a n d D T C 1 1 4 E , in th e s a m e s iz e
|
OCR Scan
|
PDF
|
500/a
-500/Hm
-5m-10m
-50m-100m
50Qji1m
50ml00m
c114e
transistors for power
FMC3
|
P4M transistor
Abstract: AS-016 AS016 DTA114EU
Text: Transistors Digital transistors built-in resistors D T A 114 E E /D T A 114 E U A /D T A 114 E K A /D T A 114 E S A •F ea tures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
|
OCR Scan
|
PDF
|
DTA114EE
P4M transistor
AS-016
AS016
DTA114EU
|
Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f an in v e rte r c irc u it
|
OCR Scan
|
PDF
|
DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA
DTA114YE
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
|
