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    572 TRANSISTOR Search Results

    572 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    572 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    65W ac adapter schematic

    Abstract: drv 8807 65W 18.5V ac adapter schematic RLTI-1099
    Text: Using the UCC28630EVM-572 User's Guide Literature Number: SLUUAX9B February 2014 – Revised April 2015 User's Guide SLUUAX9B – February 2014 – Revised April 2015 UCC28630EVM-572, 65-W Nominal, 130-W Peak, Primary-Side Regulated Adapter Module 1 Introduction


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    PDF UCC28630EVM-572 UCC28630EVM-572, UCC28630EVM-572 65W ac adapter schematic drv 8807 65W 18.5V ac adapter schematic RLTI-1099

    RLTI-1099

    Abstract: 65W 18.5V ac adapter schematic
    Text: Using the UCC28630EVM-572 User's Guide Literature Number: SLUUAX9A February 2014 – Revised May 2014 User's Guide SLUUAX9A – February 2014 – Revised May 2014 UCC28630EVM-572, 65-W Nominal, 130-W Peak, PrimarySide Regulated Adapter Module 1 Introduction


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    PDF UCC28630EVM-572 UCC28630EVM-572, UCC28630EVM-572 RLTI-1099 65W 18.5V ac adapter schematic

    Untitled

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses resistive feedback and active bias for temperature compensation


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    A966 transistor

    Abstract: transistor a966 A966
    Text: H Avantek Products Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500␣MHz The 572 Series is a medium-gain bipolar RF amplifier that uses resistive feedback and active bias


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    PDF 500MHz 5963-2460E A966 transistor transistor a966 A966

    HP2.811

    Abstract: UTC572
    Text: Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses resistive feedback and active bias for temperature compensation


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    ALR060

    Abstract: ASI10513 1402 Transistor
    Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz


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    PDF ALR060 ALR060 ASI10513 1402 Transistor

    nec 2412

    Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
    Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1


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    PDF 2SC5012 2SC5012-T1 2SC5012-T2 nec 2412 transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702

    transistor

    Abstract: Transistors General 2SC241ZK transistors transistor 571 Silicon General NPN/PNP transistor CHIP TRANSISTOR pnp and npn pdf of transistors npn pnp
    Text: Transistors General purpose transistor dual transistors UMZ1N / IMZ1A FFeatures 1) Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.


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    PDF 2SA1037AK 2SC241ZK 96-525-AC22) transistor Transistors General transistors transistor 571 Silicon General NPN/PNP transistor CHIP TRANSISTOR pnp and npn pdf of transistors npn pnp

    f 7732

    Abstract: A8140
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF R32C/160 REJ09B0516-0102 f 7732 A8140

    TRANSISTOR SMD kl3

    Abstract: amplifier 446 mhz pmr equivalent transistor bce 243 KL3 SMD diode DIODE SMD b14 error monitor comparator multiplexer parity smd TRANSISTOR code b6 square d starter type sc03 TRANSISTOR SMD m3a 2CM06
    Text: REJ09B0458-0010 R8C/32A Group 16 Hardware Manual RENESAS MCU M16C FAMILY / R8C/Tiny SERIES Preliminary All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    PDF REJ09B0458-0010 R8C/32A TRANSISTOR SMD kl3 amplifier 446 mhz pmr equivalent transistor bce 243 KL3 SMD diode DIODE SMD b14 error monitor comparator multiplexer parity smd TRANSISTOR code b6 square d starter type sc03 TRANSISTOR SMD m3a 2CM06

    ASI10552

    Abstract: AVD002F
    Text: AVD002F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG B A DESCRIPTION: .100 X 45° ØD .088 x 45° CHAMFER The ASI AVD002F is Designed for C B FEATURES: • • • Omnigold Metalization System E F G H I MAXIMUM RATINGS 250 mA IC J K MAXIMUM


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    PDF AVD002F AVD002F ASI10552 ASI10552

    Untitled

    Abstract: No abstract text available
    Text: Whol HEWLETT mL'HÆPACKARD Avantek Products Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTO/UTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses


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    PDF RF112

    Untitled

    Abstract: No abstract text available
    Text: • 7 0 2 0 ^ 000023b b ?b ■ RHH RPI-572 ■ k ^ U /S e n s o rs RPI-572 * h < > iî7 ^ Photointerrupter • ÿW ^jÈHI/D im ensions Unit : mm RPI-572 t t , - i- m * G a A s ^ fl-S ê h h 7 > v 7 ÿ i fê ffl Ix /d S f l R * - * lif t * gebmf > 0.5


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    PDF 000023b RPI-572 RPI-572

    Untitled

    Abstract: No abstract text available
    Text: Thai HEWLETT mL'HMPACKARD Avantek Products Thin-Film Cascadable Amplifier 50 to 500 MHz Technical Data UTOAJTC 572 Series Features Description Pin Configuration • Frequency Range: 50 to 500 MHz The 572 Series is a medium-gain bipolar RF amplifier that uses


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    PDF

    AVANTEK uto

    Abstract: Avantek* UTC
    Text: Q avantek UTO/UTC 572 Series Thin-Film Cascadable Amplifier 50 to 500 MHz FEATURES APPLICATIONS • • • • • IF/RF Amplification • Pre-Mixer RF Stage • Post LO Amplifier Stage Frequency Range: 50 to 500 MHz High Reverse Isolation: 50 dB LowVSW R


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    PDF SPECI00 AVANTEK uto Avantek* UTC

    BK 1085

    Abstract: Avantek UTC 1023 Avantek amplifier UTC AVANTEK ina transistor 2sc 1586 Avantek* UTC UTC572 Avantek amplifier ut Avantek rf amplifier G503S
    Text: AVANTEK INC A V Â M 44Ê UTO/UTC 572 Series Thin-Film Cascadable Amplifier 50 to 500 MHz T E K .APPLICATIONS FEATURES • • • • DDDflaSS a B A V A D • IF/RF Amplification • Pre-Mixer RF Stage • Post LO Amplifier Stage Frequency Range: 50 to 500 MHz


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    PDF CA05035 BK 1085 Avantek UTC 1023 Avantek amplifier UTC AVANTEK ina transistor 2sc 1586 Avantek* UTC UTC572 Avantek amplifier ut Avantek rf amplifier G503S

    Untitled

    Abstract: No abstract text available
    Text: APEX M I C R O T E C H N O L O G Y CORP n c ; ^ , . P b7E D Dfl7flb3t 0 0 0 1 5 1 5 572 4a P jy F IE R S , , . APIT . PAIO • PAIOA APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 0 0 546-A PEX 8 0 0 - 5 4 6 - 2 7 3 9 FEATURES • • • •


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    PDF 546-APEX 100kHz 500S2 PA10MU

    15Vdc regulator circuit diagram

    Abstract: NC572 NC530 17 VOLTS TO 14 VOLTS REGULATOR NC531 NC562 NC562B NC573 NC581 NC583
    Text: C IR C U IT D IA G R A M Case 57 0 .6 in. low p ro fil« TO-8 D E S C R IP T IO N The N C 572 is a d u a l v o lta g e r e g u la to r p ro v id in g tw o is o la te d a nd in d e p e n d e n t c o n tro l s e c tio n s o f c o m p le m e n ta ry p o la rity . O u tp u t v o lta g e s a re in te r n a lly p re s e t to + 1 5 and


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    PDF NC572 15VDC, 38VDC. 15VDC NC562 15Vdc regulator circuit diagram NC530 17 VOLTS TO 14 VOLTS REGULATOR NC531 NC562 NC562B NC573 NC581 NC583

    SP571

    Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
    Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


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    PDF SGSP47 /P472¿ SGSP571/F572| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472

    tf s 544 a

    Abstract: No abstract text available
    Text: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings


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    PDF 2SC3162 O-220 2SC4051 ITO-220 ITO-220 2SC4663 tf s 544 a

    ic 4580

    Abstract: SL 100 NPN Transistor hfe 4053 4833 4834 ITO-220 2SC3162 2SC4051 2SC4663
    Text: H ig h S p e e d S w it c h in g T r a n s is t o r s F3 s er ie s Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings Part No. VCEO EIAJ No. VCBO VCEO V ebo Ic IB Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 (sus) (min)


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    PDF 2SC3162 O-220 2SC4663 ITO-220 ic 4580 SL 100 NPN Transistor hfe 4053 4833 4834 2SC3162 2SC4051

    TH3L10

    Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
    Text: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500


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    PDF 2SD1022 2SB1282 O-220 TH3L10 3L10Z* TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283

    2SC5012-T1

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


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    PDF 2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1

    transistor NEC D 882 p

    Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •


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    PDF 2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking