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    STMicroelectronics SGSP475

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    SGSP47 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGSP471 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SGSP471 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP471 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    SGSP472 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP474 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP474 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    SGSP475 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SGSP475 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP475 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    SGSP477 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SGSP477 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP477 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    SGSP477 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Scan PDF
    SGSP477CHIP STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor in Die Form Scan PDF
    SGSP479 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SGSP479 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP479 STMicroelectronics Shortform Data Book 1988 Short Form PDF

    SGSP47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    486T250-3C8

    Abstract: Ferrox EC52-3C8 L123 regulator SGSP479 EC52-3C8 ec52-3c8 ee lm723 LM723 pin details IF30-3C8 LM723 regulator BLOCK DIAGRAM
    Text: APPLICATION NOTE A SECOND-GENERATION IC SWITCH MODE CONTROLLER OPTIMIZED FOR HIGH FREQUENCY POWER MOS DRIVE INTRODUCTION Since the introduction of the SG1524 in 1976, integrated circuit controllers have played an important role in the rapid development and exploitation of


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    PDF SG1524 486T250-3C8 Ferrox EC52-3C8 L123 regulator SGSP479 EC52-3C8 ec52-3c8 ee lm723 LM723 pin details IF30-3C8 LM723 regulator BLOCK DIAGRAM

    SGSP474

    Abstract: No abstract text available
    Text: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi


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    PDF 7iai237 SGSP474 SGSP475 100kHz 0Q30Q33 SGSP474

    Untitled

    Abstract: No abstract text available
    Text: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils


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    PDF D0301SD SGSP477 18x18

    SGSP477

    Abstract: No abstract text available
    Text: SGS-THOMSON m SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: • METALLIZATION: Top Back 221 x 221 mils Al - max 7 mils M s P-Vapox 5 6 x 4 3 mils 18 x 18 mils c T 16 ± 2 mils • RECOMMENDED WIRE BONDING: Gate 6100 Â


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    PDF SGSP477 MC-0076

    SGSP471

    Abstract: No abstract text available
    Text: Æ 7 SGS-THOMSON SGSP471 SGSP472 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on SGSP471 SGSP472 100 V 80 V 0.075 ß 0.05 n 30 A 35 A • • • • HIGH SPEED SWITCHING APPLICATIONS 8 0 - 100 VOLTS - FOR DC/DC CONVERTERS HIGH CURRENT > 1V DROP AT 20A


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    PDF SGSP471 SGSP472

    SP571

    Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
    Text: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field


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    PDF SGSP47 /P472¿ SGSP571/F572| SP472 SP572 OT-93 SP471 SP571 T471/P472 SGSP57I/P572 diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472

    SGSP479

    Abstract: sgsp478 P479 p479 to218 SGSP579 75637 DM 7449 SGSP478/P578
    Text: S G S-THOtlSôN ^ m m ^ ^ * J 73C _ 07 E D | 7^5^637 iH ^ t3 ° - 7 ^ 3 ^ V 3 - G D Î 7 6i 4 b |t 1 f 1/SGSP478/P479j I« a 3 ;SGSP578/P579 ' N_CHANNEL poWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate


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    PDF 1/SGSP478/P479j SGSP578/P579 OT-93 SGSP478 SGSP578 SGSP479 SGSP579 C-171 SCSP478/P479 P479 p479 to218 75637 DM 7449 SGSP478/P578

    sgsp471

    Abstract: No abstract text available
    Text: SGSP471 SGSP472 ¿ Z J SCS-THO M SON * J Æ . HDmmiOTMWÊS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP471 SGSP472 Voss 100 V 80 V ^ D S o n 0.075 n 0.05 Î2 Id 30 A 35 A • • • • HIGH SPEED SWITCHING APPLICATIONS 8 0 - 100 VOLTS - FOR DC/DC CONVERTERS


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    PDF SGSP471 SGSP472 O-218

    350w schematic diagram motor control

    Abstract: vdgr test circuit SGSP479
    Text: S G S - T t i O M S O N M ‘J Æ „ S G S P 4 7 9 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP479 V dss 500 V ^D S on 0.7 ß Id 9A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH VO LTAG E-9A FOR UP TO 350W SMPS


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    PDF SGSP479 100KHZ O-218 SGSP479 350w schematic diagram motor control vdgr test circuit

    SGSP477

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON SGSP477 CHIP ^ 7 # llD æ O IlL lK g T O R O D Ê i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils


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    PDF SGSP477 MC-0076

    Untitled

    Abstract: No abstract text available
    Text: 3 G E J> • 7 ci 2 cî 5 3 7 D S C S -T H O M S O N HLIim RDD gi 3 D G M 1 b ■ T \ 3 A - 1 3 s 6 S’ T!,0MS0K SG SP479 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP479 VDSS 500 V RDS(on 0.7 ß 9A • • • • HIGH SPEED SWITCHING APPLICATIONS


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    PDF SP479 SGSP479 100KHZ 00300M5

    sgsp477

    Abstract: MC-0076
    Text: /S T SGS-THOMSON 1 # ^ s - THoMSON SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM 'D IE SIZE: 221 x221 mils • METALLIZATION: Top Al Back A u /C r/N i/A u ' BACKSIDE THICKNESS: 6100 A 1 DIE THICKNESS: 16 ± 2 mils ’ PASSIVATION:


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    PDF SGSP477 56x43 18x18 MC-0076 T-oy-11 MC-0076

    SGSP474

    Abstract: No abstract text available
    Text: r^ 7 S G S -T H O M S O N # » » H H H O T M lO Ê i SG SP474 SG SP475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on *D SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 U 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS


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    PDF SP474 SP475 SGSP474 SGSP475 100kHz

    sgsp474

    Abstract: No abstract text available
    Text: SGSP474 SGSP475 Æ 7 SGS-THOMSON ^ 7 # RíflD IS Q IILll©M)RDD©Í N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) •d SGSP474 SGSP475 450 V 400 V 0.7 fl 0.55 fi 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS


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    PDF SGSP474 SGSP475 100kHz

    sgsp476

    Abstract: P575 6V 475 diode diode sg 71 SGSP474 P475
    Text: S G S-THÔHSON Q7E D T J 3 C 174357 ~D T Î3 ^ - / 3 J SGSP474/P475/P476 SGSP574/P575/P.578 N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.


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    PDF SGSP474/P475/P476 SGSP574/P575/P /400V OT-93 SGSP474 SGSP574 SGSP475 SGSP575 SGSP476 SGSP576 P575 6V 475 diode diode sg 71 P475

    SGSP477

    Abstract: No abstract text available
    Text: 3QE D • 7 ci 2 ci 2 3 7 QÜ3QQ35 f Z 7 S G S -T H O M S O N ^ 7 # [ ¡ « [ ^ » Ë ig T M l O t g S □ ■ 'T - 3 9 H 3 * g s -t h o m s o n S G S P 477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDss ^DS on b SGSP477 200 V 0.17 ß 20 A


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    PDF 3QQ35 SGSP477 SC-0008/1 SGSP477

    SGSP477

    Abstract: bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit
    Text: f Z 7 SGS-THOMSON s6 s - th o m s o n ^7# SG SP477 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 VDss 200 V ^D S on 0.17 ß b 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING


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    PDF SGSP477 SGSP477 bg-25V SMPS CIRCUIT DIAGRAM 5V 20A AY5V tcl tv circuit

    D2080

    Abstract: SGSP477
    Text: SGS-TUOMSON SGSP477 llö » [ a i g ir C M O ( g § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP477 V dss 200 V ^DS(on 0.17 n •d 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING


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    PDF SGSP477 SGSP477 O-218 D2080

    SGSP479

    Abstract: 350w schematic diagram motor control lg SMPS circuit SMPS CIRCUIT DIAGRAM lg
    Text: n Z 7 S G S -T H O M S O N SGSP479 RjflöMilLi gTr^ iO i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on 'd SGSP479 500 V 0.7 a 9A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH VOLTAGE-9A FOR UP TO 350W SMPS


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    PDF SGSP479 100KHZ O-218 SGSP479 350w schematic diagram motor control lg SMPS circuit SMPS CIRCUIT DIAGRAM lg

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Text: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


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    PDF IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF533FI IRF531 IRF531FI IRF543 IRF543FI IRF740 smd tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


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    PDF O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


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    PDF P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591

    BUV48 SE

    Abstract: SGSD00036 kkz 10
    Text: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous


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    PDF SGS30MA050D1 250fi SGS30M SGS40TA045D: SGS400T045D O-24Q BUV48 SE SGSD00036 kkz 10

    high power pulse generator with mosfet

    Abstract: N and P MOSFET sgsp221
    Text: r=7 SCS-THOMSON JM iM R D [E] Q E[L[i©ir[^(0)[iD(§S a p p lic a t io n n o t e A BRIEF LOOK AT STATIC dV/dt IN POWER MOSFETS INTRODUCTION The normal safe operating area o f POWER MOSFETS may be insufficient when used in very fast sw itching circuits, such as those required in


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