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    3715 TRANSISTOR Search Results

    3715 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3715 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CB2203

    Abstract: Leroy Somer MFA56 180v dc motor speed controller MFA80VL CB2103 MFA63S MFA71L MFA80L ac motor inductance
    Text: Issued March 1997 232-3715 Data Pack B Data Sheet dc industrial electrical motors and gearboxes A dc motor and motor/gearbox range of totally enclosed, 2 poles, permanent magnet type, designed for use with thyristor or transistor drive for variable speed application.


    Original     		PDF

    2SB1509

    Abstract: 2sd228
    Text: Ordering number:EN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1509/2SD2282] · Low collector-to-emitter saturation voltage :


    Original     		PDF EN3715 2SB1509/2SD2282 2SB1509/2SD2282] 2SB1509 2SB1509 2sd228

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3715 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1509/2SD2282 High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039D Features [2SB1509/2SD2282] · Low collector-to-emitter saturation voltage :


    Original     		PDF ENN3715 2SB1509/2SD2282 2039D 2SB1509/2SD2282] 2SB1509

    RC-6123

    Abstract: RC 6123 MELF 0207 str 6668 Micro MELF vishay melf 0204 melf RC3715 mini-melf beyschlag
    Text: V is hay Beyschlag w w w. v i s h a y. c o m S e l ector G uide thin film melf resistors resisti v e products V I S HAY I N T E R T E C HN O L O G Y , I N C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W


    Original     		PDF VMN-SG2046-0607 RC-6123 RC 6123 MELF 0207 str 6668 Micro MELF vishay melf 0204 melf RC3715 mini-melf beyschlag

    RC-6123

    Abstract: vishay sr4 RC3715 Zener PH 200 0204 melf MELF 0207 diodes
    Text: V is hay Beysc hlag w w w. v i s h a y. c o m Selector Guide thin film melf resistors r e s i s t i v e p r o d uc t s V I S HAY INTERTE C HNOLO G Y , IN C . Thin Film MELF Resistors Vishay Beyschlag Features • Industry standard sizes: • Excellent stability under pulse load up to 1000 W


    Original     		PDF VMN-SG2046-0709 RC-6123 vishay sr4 RC3715 Zener PH 200 0204 melf MELF 0207 diodes

    EP33

    Abstract: MC10EP33 MC10EP33D
    Text: MOTOROLA Order Number: MC10EP33/D Rev. 0.1, 05/1999 Semiconductor Components MC10EP33 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP33D SOIC Product Preview B4 Divider • • • • • • • • • • • • •


    Original     		PDF MC10EP33/D MC10EP33 MC10EP33D 440ps EP33 MC10EP33 MC10EP33D

    EP33

    Abstract: MC10EP33 MC10EP33D
    Text: MOTOROLA Order Number: MC10EP33/D Rev. 0.2, 06/1999 Semiconductor Components MC10EP33 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP33D SOIC Product Preview B4 Divider PIN DESCRIPTION • • • • • • • • •


    Original     		PDF MC10EP33/D MC10EP33 MC10EP33D 440ps EP33 MC10EP33 MC10EP33D

    MC10EP32

    Abstract: MC10EP32D
    Text: MOTOROLA Order Number: MC10EP32/D Rev. 0.1, 05/1999 Semiconductor Components MC10EP32 SO–8, D SUFFIX 8–LEAD PLASTIC SOIC PACKAGE CASE 751 ORDERING INFORMATION MC10EP32D SOIC Product Preview B2 Divider • • • • • • • • • • • • •


    Original     		PDF MC10EP32/D MC10EP32 MC10EP32D 355ps MC10EP32 MC10EP32D

    2N3716

    Abstract: 3715 transistor 2N3791 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 3715 2N 3716 Silicon NPN Pow er Transistors . . . designed for medium-speed switching and amplifier applications. These devices feature: ♦Motorola P rtfrre d D«vlc» Total Switching Time at 3 A typically 1.15 us


    OCR Scan     		PDF 2N3791 2N3715 2N3716 3715 transistor 2N3791 MOTOROLA

    sd22

    Abstract: 05Vmax
    Text: Ordering num ber: EN 3 7 1 5 2SB1509/2SD2282 No.3715 PNP/NPN Epitaxial Planar Silicon Transistors 50V/15A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage :VcE sat : —0.5Vmax.


    OCR Scan     		PDF 0V/15A 2SB1509 5111MH, 2SB1509/2SD2282 -200//S 100/is 0DW12 sd22 05Vmax

    3713

    Abstract: No abstract text available
    Text: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si­ licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po­


    OCR Scan     		PDF 2N3713/14/15/16 2N3789/90/91/92 2N3713, 2N3714, 2N3715 2N3716 2N3789, 2N3790, 2N3791 2N3792 3713

    2N3715

    Abstract: 2n3716 2N3792 2n 3950 2N3792, 3715 2n3791
    Text: r z T SGS-THOMSON Ä 7 # RülDeæi[Liera iDei 2N3715 2N3716 2N3791/2N3792 COMPLEMENTARY SILICON POWER TRANSISTORS . 2N3715AND2N3792 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N3715 2N3716 2N3791/2N3792 2N3715AND2N3792 2N3791 2N3792 2n 3950 2N3792, 3715

    bdw 51 52

    Abstract: 5A pnp to 220 t 5877 BDW52C
    Text: POWER TRANSISTORS continued P O L A R IT Y (A )o a o A TYPE Epitaxial-base for linear and switching applications > an d < UJ o o c §> > < £ UJ u_ JZ > o in CNJ X 03 e II u ? □ > * Coming soon 30 PIMP NPN PNP NPN PIMP NPN PNP NPN PNP NPN PNP NPN NPN NPN


    OCR Scan     		PDF BDW52C O-126 TQ-220 O-220 T0-220 bdw 51 52 5A pnp to 220 t 5877

    NPN transistor SST 117

    Abstract: 2N3713 2N3714 J01B 2N3716 2N3715 L72B
    Text: T exas instr -c o p t o } Ta DE IflTblTEb 0D3bS71 □ | ~ 62C 36 57 1 Ô 3 6 1 7 2 6 TEXAS INSTR COPTO 2N3713,2N3714,2N3715,2N3716 N-P-N SILICON POWER TRANSISTORS F E B R U A R Y 1 9 6 8 - R E V IS E D O C T O B E R 1 9 8 4 150 W at 25° C Case Temperature


    OCR Scan     		PDF 0D3bS71 2N3713 2N3714 2N3715 2N3716 2N3716 2N3714, NPN transistor SST 117 J01B L72B

    Transistors bd 133

    Abstract: BD304 2n3054 81 220 bdy82 2N3713 2N6101 2N6111 2N3055 bd 135
    Text: PNP Power Transistors « Epitaxial Bas« » L F Am plifier and switching Transistors de puissance PNP « Base 6pitaxi6e » A m plification e t com m utation B F Type Compl. I Case j B oitier Ptot h21E W V cE O (V) TO 66 29 -5 5 -4 25 TO 66 25 -6 0 -4 20


    OCR Scan     		PDF TPu75 2N6101 Transistors bd 133 BD304 2n3054 81 220 bdy82 2N3713 2N6111 2N3055 bd 135

    BT 815 transistor

    Abstract: BT 816 transistor
    Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code


    OCR Scan     		PDF 0017S3? SMBT3906 Q68000-A4341 Q68000-A4417 23b320 BT 815 transistor BT 816 transistor

    3055t

    Abstract: bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771
    Text: Æ J SGS-THOMSON ^ 7# RiiOtglKiiiILKgTORODÊi GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR EPITAXIAL BASE TRANSISTORS Continued •c v CBO v CEO Package ptot Tyipe NPN PNP hFE Î <C 1 VCE v CEsat ic 1 •b min (A) (V) (V) (W| 3 3 3 3 3 80 80 90 100 115


    OCR Scan     		PDF 2N5190 3055t bdw 51 52 SGS TIP 32 mj 3055 npn 2955t B0536 bd 911 mj 2955 npn bd 3055 TIP 3771

    transistor marking bh ra

    Abstract: 2SA1641
    Text: S A N Y O S E M I C O N D U C T O R CORP SHE D 7 eJ‘ì707b 000-7140 4 2SA1641 T- 31-IS PNP Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications I2326A F eatures . Adoption of FBET, MBIT processes. • Low saturation voltage. • F ast switching speed.


    OCR Scan     		PDF 2SA1641 31-IS I2326A 2SA1641-used transistor marking bh ra 2SA1641

    bly89a

    Abstract: Transistor bly89a
    Text: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		PDF Q01414fl BLY89A 7Z675I bly89a Transistor bly89a

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    312oc

    Abstract: mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004* M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed


    OCR Scan     		PDF MJE/MJF18004 O-220 AN1040. 312oc mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230

    2N3713

    Abstract: 2SC 9012 2N3714 2n3716 9012 transistor 2N371S k130k1
    Text: TYPES 2N3713, 2N3714, 2N3715, 2N3716 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND SWITCHING APPLICATIONS • 150 W at 25°C Case Temperature • 10 A Rated Collector Current • Min f hfe of 30 kHz <* Z2 2 * § m • Min f T of 4 MHz


    OCR Scan     		PDF 2N3713, 2N3714, 2N3715, 2N3716 2N3713 2SC 9012 2N3714 9012 transistor 2N371S k130k1

    ic TT 2222

    Abstract: transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712
    Text: N AMER PHILIPS/DISCRETE GbE D 86D 0 1910 ^5 3 = 1 3 1 D T - G o m m a 3 3 5 -« BLY89A V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every


    OCR Scan     		PDF BLY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 2222 npn 2222 transistor yl 3710 dfv 36 mb 3712