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    PEI Genesis ACC02A22-19S-003-LC

    CONN RCPT HSG FMALE 14POS PNL MT
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    DigiKey ACC02A22-19S-003-LC Bulk 2,041 1
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    ACC02A22-19S-003-LC Bulk 100 1
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    PEI Genesis ACC06AF22-19S-003

    CONN PLUG FMALE 14P SILVER CRIMP
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    DigiKey ACC06AF22-19S-003 Bulk 1,822 1
    • 1 $49.32
    • 10 $42.75
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    PEI Genesis ACC06A22-19S-003-LC

    CONN PLUG HSG FMALE 14POS INLINE
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    DigiKey ACC06A22-19S-003-LC Bulk 1,081 1
    • 1 $35.17
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    PEI Genesis ACC01AF22-19S-003

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    DigiKey ACC01AF22-19S-003 Bag 120 1
    • 1 $45.69
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    PEI Genesis ACC06A18-19S-003

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    DigiKey ACC06A18-19S-003 Bulk 117 1
    • 1 $53.93
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    ACC06A18-19S-003 Bulk 16 1
    • 1 $45.78
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    19S00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N158

    Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power
    Text: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.


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    PDF 19500/24D 19500/24c CCU51DERED 2N158 germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power

    1N589

    Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
    Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993


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    PDF GD0D12S 003S612 ml-S-19S00/477b n1l-s-19s00/477a 1n58q2, 1ns804, 1ns806, 1ns807, 1h5809, 1ns811, 1N589 IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent

    2N1716

    Abstract: 2M171 A771
    Text: KIL-I-ltSOO/ft*14000 * u. loan f DPI ftSBOIlIC iininmvT j 30 August 197 9 HILITABY SPBCIFICATIOW TKAMSISTO&. »11. SILICON. POWBE TYPES 2 W 1 7 U THBOOGB 2*1717 This a n a d i t n t forai • part of Military Spacifi* cation K1L-S~19S00/263A BL • datad 15 May 1963


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    PDF MIL-8-19500/Â 634tHt) MIL-S-19500/263A 2S171S8, 2N1716, 2B1713( 2M1717. t2B1717S. 594L-A771) 2N1716 2M171 A771

    2N914

    Abstract: transistor 331
    Text: AMENDMENT 1 10 Septeaber 1975 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPES 2N914 AND TX2N914 This aatendmem fom s a part o f M ilitary Sp ecificatio n MIL-S-19S00/373A, dated 10 August 19TC, and is approved for use by a ll Departments and ~


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    PDF KIl-S-19500/373A 2N914 TX2N914 HIL-S-19S00/373A, CL-S-19S00/371A transistor 331

    diode equivalent

    Abstract: JANTX1N3293
    Text: IO R Government/ Space Products Diode, JAN Equivalent Diode, JAN Equivalent Diode 150 Amps P u t H um bert IR 80-1243 80-1243R Industrial Currant Rating A M ilitary Current Rating (A) Com pliant to M IL-8-19S00 Q ualification 150 150 /246 19000-410-84 150


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    PDF IL-8-19S00 1N3289 JAN1N3289 1N3291 JAN1N3291 1N3293 JAN1N3293 DO-205AA 1N3294 JAN1N3295 diode equivalent JANTX1N3293

    Untitled

    Abstract: No abstract text available
    Text: 6.60 0 . 260 Fig. 14 - Conforms to JE D E C Outline TO-258AA Dimensions in Millimeters and (Inches) BERYLLIA WARNING PER MIL S-19S00 Packages containing baryllia shall not bt ground, sandblasted, machined, or have other operations performed on them which


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    PDF O-258AA S-19S00 IRGVH50FD IRGVH50FU O-258

    003S5

    Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING


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    PDF HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US

    IN5314

    Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
    Text: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)


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    PDF UC4250* UC42500 MIL-STD-883C, 19S00/ 2N7109* SDF8200 FMN35 SDF8201Â FMNZ35 SDF8202 IN5314 IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297

    1N1130

    Abstract: 1N1131 GENERAL SEMICONDUCTOR diodes marking code me military part marking symbols jan JAN1N1 JAN1N1130
    Text: J ttllrO T S M R l/Z d S A -S S C IO IIB I1 M Jttrn SUP&RS£p0fG M l L - S - l t5 Ü /2 S t E L u1 T ÌnA 1 4 &FTAPV e n e r v p i r am n w Æ. £ 1 4 % JL k / A A ^ V I X ' A V A A * V A 1 Se M k ju N d U l t O k P O 'T V P ir c a JL JL JL J U i K J d e v


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    PDF JAN-1N1130 JAN-1N1131 1N1131 JAN-1N1131. 1N1130 GENERAL SEMICONDUCTOR diodes marking code me military part marking symbols jan JAN1N1 JAN1N1130