35PD300LDC-ST
Abstract: 850nm photodiode Fiber-optic
Text: All Purpose InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 35PD300LDC-ST The 35PD300LDC-ST, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is a low-darkcurrent version of the 35PD300-ST, one of Telcom Devices’ most versatile optoelectronic
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35PD300LDC-ST
35PD300LDC-ST,
35PD300-ST,
200oC,
850nm
1300nm
-40oC
250oC
35PD300LDC-ST
850nm photodiode Fiber-optic
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1500-nm
Abstract: No abstract text available
Text: All Purpose InGaAs p-i-n Photodiode Sheet 1 of 3 35PD300LDC-S The 35PD300LDC-S, an InGaAs photodiode with a 30µm-diameter photosensitive region mounted on a metallized ceramic substrate, is a low-dark-current version of the 35PD300. This device is one of Telcom
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35PD300LDC-S
35PD300LDC-S,
35PD300.
1500-nm
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Untitled
Abstract: No abstract text available
Text: All Purpose InGaAs p-i-n Photodiode 35PD300LDC-TO The 35PD300LDC-TO, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-46 header, is a low-dark-current version of the 35PD300-TO. This device is one of Telcom Devices’ most versatile optoelectronic components, with applications in high
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35PD300LDC-TO
35PD300LDC-TO,
35PD300-TO.
200oC,
1300nm
1500nm
-40oC
250oC
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PDF
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35PD300LDC-S
Abstract: No abstract text available
Text: All Purpose InGaAs p-i-n Photodiode 35PD300LDC-S The 35PD300LDC-S, an InGaAs photodiode with a 300µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is a low-dark-current version of the 35PD300S, one of Telcom Devices’ most versatile detectors. Applications include high sensitivity
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35PD300LDC-S
35PD300LDC-S,
35PD300S,
200oC,
1300nm
1500nm
-40oC
250oC
35PD300LDC-S
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PDF
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Untitled
Abstract: No abstract text available
Text: All Purpose InGaAs p-i-n Photodiode Sheet 1 of 1 35PD300LDC-ST, -SMA, -FC, -SC The 35PD300LDC-ST, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-46 header and actively aligned in a AT&T ST active device mount, is a low-dark-current version of the
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35PD300LDC-ST,
35PD300.
1300nm
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InGaAs photodiode TO-46
Abstract: No abstract text available
Text: All Purpose InGaAs p-i-n Photodiode Sheet 1 of 3 35PD300LDC-TO The 35PD300LDC-TO, an InGaAs photodiode with a 300µm-diameter photosensitive region packaged in a TO-46 header, is a low-dark-current version of the 35PD300. This device is one of Telcom Devices most
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Original
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35PD300LDC-TO
35PD300LDC-TO,
35PD300.
InGaAs photodiode TO-46
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PDF
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
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2PD250
2PD500
35PD5M
35PD10M
35PD3M
detector inas
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