InGaAs pin photodiode 1Ghz
Abstract: TELCOM 13PD100-TO
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest standard device enabling a 1GHz frequency cutoff. Planar semiconductor
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13PD100-TO
13PD100-TO,
InGaAs pin photodiode 1Ghz
TELCOM
13PD100-TO
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InGaAs pin photodiode 1Ghz
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD100-ST, -SMA, -FC, -SC The 13PD100-ST, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is the largest standard device enabling a 1Ghz
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13PD100-ST,
1300nm
InGaAs pin photodiode 1Ghz
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13PD100-ST
Abstract: No abstract text available
Text: High Performance InGaAs p-i-n Photodiode ‘ST’ Active Device Mount 13PD100-ST The 13PD100-ST, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header and aligned in an AT&T ST active device mount, is the largest standard device enabling a 1 GHz Frequency cutoff. Planar semiconductor design and dielectric
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13PD100-ST
13PD100-ST,
200oC,
1300nm
-40oC
250oC
13PD100-ST
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13PD100-TO
Abstract: photodiode 011
Text: High Speed InGaAs p-i-n Photodiode 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise performance.
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13PD100-TO
13PD100-TO,
200oC,
1300nm
-40oC
250oC
13PD100-TO
photodiode 011
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InGaAs pin photodiode 1Ghz
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, is the largest standard device enabling a 1GHz frequency cutoff. Planar
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13PD100-S
13PD100-S,
InGaAs pin photodiode 1Ghz
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 3 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. Modules are available with stock or customer-supplied fiber in single or multimode versions. The coaxial package offers streamlined design and strain-relief for the fiber. Planar
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13PD100-F
13PD100-F
100mm-diameter
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13PD100-F
Abstract: No abstract text available
Text: High Speed Fiber Pigtailed InGaAs p-i-n Photodiode 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a co-axial fiber pigtailed module. Modules are available with stock or customersupplied fiber in single or multi-mode versions. The coaxial package offers streamlined design
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13PD100-F
13PD100-F
200oC,
1300nm
-40oC
250oC
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photodiode ingaas ghz
Abstract: 13PD100-S
Text: High Speed InGaAs p-i-n Photodiode 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region mounted on a metallized ceramic substrate, is the largest standard device enabling a 1 GHz frequency cutoff. Planar semiconductor design and dielectric passivation provide low noise
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13PD100-S
13PD100-S,
200oC,
1300nm
1500nm
-40oC
250oC
photodiode ingaas ghz
13PD100-S
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Untitled
Abstract: No abstract text available
Text: High Speed InGaAs p-i-n Photodiode Sheet 1 of 1 13PD100-FC The 13PD100-FC, an InGaAs photodiode with a 100µm-diameter photosensitive region packaged in a TO-46 header and aligned in an FC active device mount, is intended for high speed and low noise applications.
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13PD100-FC
13PD100-FC,
1300nm
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detector inas
Abstract: No abstract text available
Text: CHEMSENSE Detectors Data Sheet Sheet 1 of 2 NIR Components - 13 35 PD Series High Performance InGaAs Photodiodes Part Number Photodiode TypePackage Designation Photosensitive Diameter, µm Dark Current (VR = 5V), nA Capacitance (VR = 5V), pF 13PD55 - TO
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13PD55
13PD75
13PD75LDC
13PD100
13PD150
35PD300
35PD300LDC
2PD250
detector inas
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2PD250
Abstract: 35PD10M 35PD3M detector inas
Text: CHEMSENSE Detectors Data Sheet Sheet 2 of 2 NIR Components - 2.2 PD Series The 2.2 PD series of detectors is based on GAInAsSb/GaAlAsSb heterostructure technology. Spectral sensitivity lies between 1.0 and 2.4 µm, and peak response of 1 A/W occurs at about 2.2 µm. Operation can be photovoltaic or photoconductive, and pulsed or CW. Price/performance compared
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2PD250
2PD500
35PD5M
35PD10M
35PD3M
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