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    2SK405 2SJ115 Search Results

    2SK405 2SJ115 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK4057-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SK4058-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SK4058-S15-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK4057-ZK-E2-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation

    2SK405 2SJ115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    2SK147

    Abstract: 2SC3280 2SA1301 2SC3281 2SA1302 2SK389 2SC2240 2sk405 2sj115 2SC3182N 2SK405 2SJ109 2SA970
    Text: [8] 2. オーディオアンプ回路 2.1 ブリアンプ回路 3 2SK147 初段イコライザアンプ 2SK147 x 2 and 2SC2240 × 2 1 kΩ VR 270 Ω 270 Ω +40 V 20 Ω 20 Ω 180 kΩ 2.7 kΩ 270 kΩ 2.7 kΩ 270 Ω 0.0929 µF 3.9 kΩ 20 Ω 50 kΩ


    Original     		PDF 2SK147 2SC2240 2SC2240 2SA970 1SS226 1SS193 2SA950 2SK147 2SC3280 2SA1301 2SC3281 2SA1302 2SK389 2sk405 2sj115 2SC3182N 2SK405 2SJ109

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    2sk405 2sj115

    Abstract: 2SJ11 2SK405 2SJ115
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 03.2x0.2 1 5l9 MAX . FEATURES: . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYf s I=2.OS Typ. . Complementary to 2SK405


    OCR Scan     		PDF 2SJ115 2SK405 -160V 2sk405 2sj115 2SJ11 2SK405 2SJ115

    2sk405 2sj115

    Abstract: 2SK405 2SJ115 2SJ115/2SK405
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115


    OCR Scan     		PDF 2SK405 2SJ115 2sk405 2sj115 2SK405 2SJ115/2SK405

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    2SK405

    Abstract: RS2040
    Text: 45E ]> m TOTTSSD 0017Ô3T R TOS*4 TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE •1 * - ^ TOSHIBA DI SCRETE/OPTO AUDIO FREQUENCY POWER AMPL IF IE R APPLICATION. Unit .1&9MAX FEATURES: . High Breakdown Voltage VDSS = 160V . High Forward Transfoer Admittance


    OCR Scan     		PDF TCH72SD 0017flm -2SK405 2SK405 RS2040

    2sk405 2sj115

    Abstract: 2SK405 2SJ115 toshiba 2-16c1b IE5A RS2010
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE TOSH IB A DISCRETE/OPTO AUDIO FREQUENCY POWER AM PL IF IE R APPLICATION. Unit in mm 15.9 MAX 03>2±a2 FEATURES: . High Breakdown Voltage v DSS=160V . High Forward Transfoer Admittance I Y f s I = 2 . OS


    OCR Scan     		PDF 2SK405 2SJ115 2-16C1B 2sk405 2sj115 2SK405 2SJ115 toshiba 2-16c1b IE5A RS2010

    Untitled

    Abstract: No abstract text available
    Text: 45E T> • TOTVSSD 0017Ô3T ITO S H R TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO AUDIO FREQUENCY POWER AMPL IF IE R APPLICATION. Unit in mm 15.9 MAX. 03.2±aa FEATURES: . High Breakdown Voltage v DSS=160V . High Forward Transfoer Admittance


    OCR Scan     		PDF 2SK405 2SJ115

    2sk405 2sj115

    Abstract: 2SK405
    Text: i TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE A U DIO F R EQUENCY POWER AMP L I F I E R APPLICATION. Unit in mm 1&9MAX. FEATURES: . High B r e a k down Voltage 05.2±Q2 : V[ sg=160V . High Forward Tra n s f o e r Admit t a n c e : |Yfsl=2.0S Typ.)


    OCR Scan     		PDF 2SK405 2SJ115 2sk405 2sj115 2SK405

    2sk405 2sj115

    Abstract: 2SJ115 2SK405
    Text: M5E 3> m =10=17250 0 0 1 7 0 3 0 ITOSH 2 2SJ115 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AUDI O FREQUENCY POWER AM PL IF IE R APPLICATION. 03.2 t. 0.2 FEATURES: . High Breakdown Voltage : V d s $=-160V . High Forward Transfer Admittance


    OCR Scan     		PDF -L60v 2SSC405 2SJ115 032ta2 ciDci755D T-39-23 -2SJ115 2sk405 2sj115 2SJ115 2SK405

    Untitled

    Abstract: No abstract text available
    Text: 45E J> m TGTVESQ IT0S4 0017fl3D 2 2SJ115 "T-sq-z-i> TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AU DI O FREQUENCY POWER AM PL IF IE R APPLICATION. 0 3 .2 t a g 1S9MAX. FEATURES: . High Breakdown Voltage : V[)SS = ~160V


    OCR Scan     		PDF 0017fl3D 2SJ115 2SK405 10-CL25

    2sk405 2sj115

    Abstract: 2sj115 2SJ115/2SK405
    Text: FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ115 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 15.9M A X . 0 3 .a ± O i8 FEATURES: O io| ri -«I . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYfs I=2.OS Typ.


    OCR Scan     		PDF 2SJ115 2SK405 2sk405 2sj115 2sj115 2SJ115/2SK405

    2sk405 2sj115

    Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
    Text: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS


    OCR Scan     		PDF 2SK368 2SK369 2SK370 2SK371 2SK372 2SK386 2SK387 2SK388 20mVmax 2SJ109 2sk405 2sj115 2SK389 2SK400 2SK385 2SJ112 2SJ114 2SK388 2SK373 2SK370

    2SK405 equivalent

    Abstract: 2sk405 2sj115 YTF541 2SJ200 equivalent YTAF630 2SK2382 equivalent 2SK941 equivalent 2SK2232 equivalent YTF541 equivalent YTF540
    Text: 10\Discontinued POWER MOS FET Products The types listed below are discontinued products, or willbe descontinued. When adopting them for use in development of new systems, please consider the equivalent and recommended types listed in parallel with the discontinued products.


    OCR Scan     		PDF 10\Discontinued 2SK405 2SK422 2SK423 2SK442 2SK1251 2SK1252 2SJ115 2SJ123 YTF150 2SK405 equivalent 2sk405 2sj115 YTF541 2SJ200 equivalent YTAF630 2SK2382 equivalent 2SK941 equivalent 2SK2232 equivalent YTF541 equivalent YTF540

    2sk1529

    Abstract: 2sk405 2sj115 2sc3281 YTFP450 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405 YTFP150
    Text: MOS FET TRANSISTORS POWER MOS FETS -rr MOS II YTFP MAXIMUM RATINGS Application Type No. (N-Channel) (A) YTFP150 DC-DC Converter YTFP151 Motor Drive YTFP152 YTFP153 YTFP252 YTFP253 Motor Drive


    OCR Scan     		PDF YTFP150 YTFP151 YTFP152 YTFP153 YTFP250 YTFP251 YTFP252 YTFP253 YTFP450 YTFP451 2sk1529 2sk405 2sj115 2sc3281 mosfet 2sc3281 Transistors Bipolar NPN TO-3P 2sk405

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    TE85L PACKING TE85

    Abstract: Reel Taping Specification JEDEC toshiba tape and reel 2SK851 toshiba packing naming 2SK405 equivalent 2SK1529 LT 5212 2sk1529/2sj200 equivalent 2SJ200 equivalent
    Text: TO SHIBA Quick Reference I. Quick Reference Table for Taping 1. TO-92 Device PACKING TAPING TYPE NO. REEL TPE1 DIMENSIONAL OUTLINE d ir e c t io n of tape feed QTY. 2.000PCS/ REEL 1 2 .7 AMMO PACK 2. TPER1 D IR E C T IO N OF TAPE FEED TPE2 D IR E C T IO N OF


    OCR Scan     		PDF 000PCS/ 00PCS/ OT-23MOD TE85L TE85R 50PCS/ 2SK405 2SK1252 TE85L PACKING TE85 Reel Taping Specification JEDEC toshiba tape and reel 2SK851 toshiba packing naming 2SK405 equivalent 2SK1529 LT 5212 2sk1529/2sj200 equivalent 2SJ200 equivalent

    IRF740 "direct replacement"

    Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
    Text: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­


    OCR Scan     		PDF IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRF610 IRF611 IRF740 "direct replacement" irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2sj111

    Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
    Text: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)


    OCR Scan     		PDF 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 100kQ, 2SJ129 2SJ130 2SK722 2SJ131 2sj111 2SJ131 2SJ112 2SJ110 2SJ122 2SJ121 2sj135 2SJ106 2SJ129

    2sk1603

    Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
    Text: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2sk1603 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497