2SC5295J
Abstract: SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03
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2002/95/EC)
2SC5295J
2SC5295J
SC-89
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equivalent 2sc5295
Abstract: 2SC5295 SC-75
Text: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 0.3 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage
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2SC5295
equivalent 2sc5295
2SC5295
SC-75
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SS TRANSISTOR
Abstract: ic shelf life Frequency Control Products transistor 2SC5295 SC-75
Text: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Collector current Collector power dissipation Junction temperature Storage temperature Unit 15 V VCEO 10 V VEBO 2 V 0.75±0.15
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2SC5295
SS TRANSISTOR
ic shelf life
Frequency Control Products
transistor
2SC5295
SC-75
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Features ■ Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC5295G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC5295G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob
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2002/95/EC)
2SC5295G
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2SC5295J
Abstract: SC-89 2SC529
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)
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Original
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2002/95/EC)
2SC5295J
SC-89
2SC5295J
SC-89
2SC529
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PDF
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equivalent 2sc5295
Abstract: 2SC5295 SC-75
Text: Transistors 2SC5295 Silicon NPN epitaxial planer type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 1° 3 5° Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2
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Original
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2SC5295
SC-75
equivalent 2sc5295
2SC5295
SC-75
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50)
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Original
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2002/95/EC)
2SC5295J
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5295G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For 2 GHz band low-noise amplification • Package • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob
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Original
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2002/95/EC)
2SC5295G
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PDF
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2SC5295J
Abstract: SC-89
Text: Transistors 2SC5295J Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification 1.00±0.05 • Features 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage
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Original
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2SC5295J
2SC5295J
SC-89
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2SC5295J
Abstract: SC-89
Text: Transistors 2SC5295J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For 2 GHz band low-noise amplification 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Symbol Rating Unit Collector-base voltage (Emitter open)
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Original
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2SC5295J
SC-89
2SC5295J
SC-89
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2SC5295
Abstract: SC-75
Text: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 0.8±0.1 1.6±0.15 0.4 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage
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2SC5295
2SC5295
SC-75
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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PDF
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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Original
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PDF
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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OCR Scan
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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PDF
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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OCR Scan
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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PDF
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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PDF
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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OCR Scan
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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PDF
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2SA1323
Abstract: 2SC4716 2SA838 2SC5020 2sc2851
Text: Transistors Selection Guide by Applications and Functions # High Speed Switch, V C O and High Frequency Equipment Package (No.) Application Functions VcEO lc (mA) V C ES SS-Mini Type (D1) High speed switch VCO and high freq. equipment S-Mini Type(D5) Mini Type (D12)
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OCR Scan
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2SA1806
2SC4691
2SA1739
2SC3938
2SC4755
2SC5379
2SC5378
2SA1738
2SC3757
2SC4782
2SA1323
2SC4716
2SA838
2SC5020
2sc2851
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PDF
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2sc4973
Abstract: 2SC5020 2SC2671
Text: Transistors Selection Guide by Applications and Functions # High Speed Switch • V C O and High Frequency Type Application Functions High speed switch Package (No.) SS Mini Type (D1) S Mini Type (D5) 2SA1806 2SA1739 2SA1738 2SC4691 2SC3938 2SC3757 2SC4755
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OCR Scan
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2SA1806
2SC4691
2SC4755
2SA1739
2SC3938
2SA1738
2SC3757
2SC4782
2SC4969
2SC3811
2sc4973
2SC5020
2SC2671
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PDF
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