Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SC431 Search Results

    2SC431 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC431 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC431 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC431 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC431 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC431 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC431 Unknown Transistor Replacements Scan PDF
    2SC431 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC431 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC431 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC431 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC431 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC431 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC431 Shindengen Electric POWER TRANSISTOR Scan PDF
    2SC431 Shindengen Electric Power Transistors Scan PDF
    2SC431 Shindengen Electric Semi Conductor Catalog Scan PDF
    2SC4310 Shindengen Electric TRANSISTOR,BJT,ARRAY,DARLINGTON,100V V(BR)CEO,3A I(C),SIP Original PDF
    2SC4310 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4310 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4310 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4310 Unknown Transistor Substitution Data Book 1993 Scan PDF

    2SC431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4315

    Abstract: No abstract text available
    Text: 2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 14dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC4315 2SC4315

    2SC4317

    Abstract: transistor c 3856
    Text: 2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.1dB, |S21e|2 = 13dB f = 1 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original     		PDF 2SC4317 SC-59 2SC4317 transistor c 3856

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE A M PLI FIE R APPLICATIONS. U n i t i n mm +0.5 2 .5 -0 .3 . L o w N o i s e F i g u r e , H i g h Gai n . . N F = 1 . ldB, I S 2 1 e |2= 1 3 d B f=lGHz MAX IMU M RATINGS (Ta=25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC4317

    C4314

    Abstract: 9T TRANSISTOR
    Text: A 7 - Swit-h.ni> Puwc' Tr,n-si->liii 15a H D T series O u tlin e D im e n s io n s 2SC4314 T15W80HDT (NPN) A b s o lu te Maximum R a tin g s 1! m sii Item a U 7 7 • ^ -7 .M I± Collector to Base Voltage flJEE C ollector to Em itter Voltage E m itter to Base Voltage


    OCR Scan     		PDF -C4314 C4314 9T TRANSISTOR

    2sc431

    Abstract: 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC MF6 •, Jü": M.a DQ Type No. No. VCBO VCEO V ebo [V ] [V ] 150 100 2SC 407 408 409 200 T7M 41OA 300 412 2SC431 ISO 432 433 T13M 200 434A 300 436 450 360 1467 T 3 M 40 500 400 1468 T10M 36 450 360 T10M 40 500 1469A T30M 36


    OCR Scan     		PDF 2n307 2SC407 2SC2126A T3M20 T10M20 T30M20 2SC3703 T30R20 02QHAX 2-04M 2sc431 2SC1466 2sc146 2SC407 H150 T10M36 T10M40 T13M T30M36 T30M40

    ic ma 8910

    Abstract: 2SC4319
    Text: 2SC4319 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C4 3 1 9 Unit in mm VHF'-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. NF = l.ldB, |S2iç|2= 15dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC4319 S21el2 Coll53 ic ma 8910 2SC4319

    VHF-UHF Band Low Noise Amplifier

    Abstract: marking lob
    Text: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC4315 IS21ei 012IGURE VHF-UHF Band Low Noise Amplifier marking lob

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm +0.5 2.5-0.3 • Low Noise Figure, High Gain. . N F = l.ld B , |S21e|2= 13dB f = 1GHz +0.25 1.5-0.15. HO ÖÖ


    OCR Scan     		PDF 2SC4317 SC-59

    LM 3177

    Abstract: 2SC4316 2SC 641
    Text: 2SC4316 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS MICROWAVE CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency Insertion Gain Noise Figure SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT


    OCR Scan     		PDF 2SC4316 LM 3177 2SC4316 2SC 641

    2SC4311

    Abstract: No abstract text available
    Text: • J4 v ¥ > 9 iV 7 Switching Power Transistor HDT series Outline Dimensions 6a 2SC4311 NPN (TP6V80HDT) Case : ITO -220 4.6*9-» 2.7*02 0.7±ti U n it • m m Absolute Maximum Ratings m Item te g n * Symbol Storage Temperature Junction Temperature 3 U 9 9 • '■<—X'ftEE


    OCR Scan     		PDF 2SC4311 TP6V80HDT) 0003b31 2SC4311

    2SC4317

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4317 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 - 0 . 3 • Low Noise Figure, High Gain. . NF = l.ld B , |S2le |2= 13dB f = 1GHz + 0 .2 5 1 .5 -0 .1 5 , HO


    OCR Scan     		PDF 2SC4317 SC-59 -j250 2SC4317

    VQE12

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4315 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 -0 .3 -fr • Low Noise Figure, High Gain • N F = l.ld B , |S 2 ie l 2 = 14dB f=lG H z M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4315 VQE12

    Untitled

    Abstract: No abstract text available
    Text: H D T series Switching Power Transistor MWIfc'Ü&M 6a 2SC4310 NPN (T6V80HDT) Outline Dimensions Absolute Maximum Ratings ie g m Item fSliFiS. Storage Tem perature Junction Tem perature 3 1 /7 J • ^ —X Collector to B a se Voltage -3 V ? •i 9 5 7 J ®EE


    OCR Scan     		PDF 2SC4310 T6V80HDT)

    2SC4314

    Abstract: No abstract text available
    Text: Switching Power Transistor 15a H D T series Outline Dimensions 2SC4314 Case : MT0-3P CT15W80HDT NPN) 5.0±o.j 2.2±o.5 ^3 .3 ^ 2.0*03 2.4 ±M Q.65±°-g Unit • mm • > Ê & # ^ 5 Ë tè m Absolute Maximum Ratings Item § I E Storage Temperature Junction Temperature


    OCR Scan     		PDF 2SC4314 CT15W80HDT) 0G03b3b 2SC4314 aS113S7

    C4318

    Abstract: trf 740 s22b 2SC4318 mur 1250 mur S22B
    Text: I ' J j i l l O M . SEM ICO N D U CTO R T O SH IB A TECHNICAL i l i O K 2SC4318 SILICON NPN EPITAXIAL PLANAR TYPE DATA 25C4318 U n it in nun V H F-U H f BAND LOW NOISE AMPUFIER APPLICATIONS. «*6 MAX. 1.6 M A X . •a4±aos. > Low Noise Figure, High Gain.


    OCR Scan     		PDF 2SC4318 25C4318) 04-0Q6 -jl50 ZSQ1318-4_ ZSC4318I 20roA 2SC4318 EH75S0 C4318 trf 740 s22b mur 1250 mur S22B

    Untitled

    Abstract: No abstract text available
    Text: High Voltage - High Speed Switching Transistors H D T s e rie s IT 0 -2 2 0 TO -220 Bipolar transistors NPN Type No. EtAJ Absolute Maximum Ratings Electrical Characteristics PT • Tstg VCBO V ceo V ebo !c Ib [V ] [V ] [V ] [A ] [A ] tw ] 6 3 50 T) 2SC4310


    OCR Scan     		PDF O-220 ITO-220 Fig80-3 2SC4310 ITO-220 Fig82-4 2SC4940

    transistor C5D

    Abstract: 2SC4315
    Text: 2SC4315 TOSHIBA 2SC4315 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS. • . +0.2 Low Noise Figure, High Gain. NF = l.ldB, |S2le|2= 14dB f = 1GHz 2 .9 - a 3 II -€3 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4315 transistor C5D 2SC4315

    2SB206

    Abstract: 2SB205 2SB212 2SC1466 2sd206 2SB214 GERMANIUM TRANSISTOR 2SB208 transistor SE 431 2SD208
    Text: C A T .N o .E 309 2SC431 th ru 2SC436 Use • For high-frequency power amplification • For high-frequency power switching Construction • NPN triple diffusion type SHINDENGEN’S silicon power transistors are all outside comparison in perfor­ mance and really epoch-making to realize that even one piece o f element is


    OCR Scan     		PDF 1BMAX11 maSC431 2SC432 2SC433 2SC434 2SC435 2SC436 2SC1466 2SC1467 2SC1468 2SB206 2SB205 2SB212 2sd206 2SB214 GERMANIUM TRANSISTOR 2SB208 transistor SE 431 2SD208

    2SC4315

    Abstract: No abstract text available
    Text: 2SC4315 TOSHIBA 2SC4315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • Low Noise Figure, High Gain N F = l.ldB , |S2 ie l2 = 14dB f=lGHz -fr M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4315 01LECTOR-BASE S21el2 -j250 2SC4315

    2sc4311

    Abstract: JY transistor TP6V80HDT
    Text: r lL J I Swit<;hmg Pownr T ransistor O C I IC o O u tlin e D im ensions 6 2SC4311 a TP6V80H DT (NPN) ^ A bso lu te Maximum R atin g s h m ft £ C onditions Symbol Item flf) a 1/ 9 9 • ■n V 9 9 ■ x ; y y Ml± C ollecto r to E m itte r Voltage x. 3 -7 9 ■s<—


    OCR Scan     		PDF 2sc4311 TP6V80HDT) O-220 2sc4311 JY transistor TP6V80HDT

    2SC4318

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm 1.6 MAX. 4.6 MAX. • . Low Noise Figure, High Gain. Q4±a05 1.7 MAX. g N F = l.ld B , |S2 ie l2 —lldB f= 1GHz l - MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4318 2SC4318

    287-1 MAG

    Abstract: 2SC4317 BT 1201 ic
    Text: 2SC4317 TOSHIBA 2SC4317 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • + 0.5 2 .5 -0 .3 + 0.25 Low Noise Figure, High Gain N F = l.ld B , |S2lel2= 13dB f=lGHz k1-5-°-15>i I- MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4317 SC-59 287-1 MAG 2SC4317 BT 1201 ic

    sem 2106

    Abstract: TRANSISTOR 3856
    Text: 2SC4317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r a 3 1 7 M F • V ■ m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S 2 ie l2 = 13dB f=lGHz + 0.5 2.5 -0.3 +0.25


    OCR Scan     		PDF 2SC4317 SC-59 a--25X --j50 sem 2106 TRANSISTOR 3856

    transistor j50

    Abstract: No abstract text available
    Text: 2SC4315 TOSHIBA TOSHIBA TRANSISTOR n SILICON NPN EPITAXIAL PLANAR TYPE f w êf d i mm 1 • 5 v Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF - l.ldB , |S2lel2= 14dB f=lGHz M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC4315 --j50 transistor j50