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    2SC5507

    Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 NE661M04-T2 24-Hour 2SC5507 NE661M04-T2 S21E 842 ic 2912

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF IS21EI2 OT-343 NE661M04 NE661M04

    transistor MJE 2955

    Abstract: 842 ic SOT 663 footprint TRANSISTOR nf 842
    Text: SILICON TRANSISTOR NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 2e-12 1e-11 08e-12 transistor MJE 2955 842 ic SOT 663 footprint TRANSISTOR nf 842

    az 2732 132

    Abstract: 2SC5507 NE661M04 NE661M04-T2-A S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 az 2732 132 2SC5507 NE661M04-T2-A S21E max10022

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE663M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz • •


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04

    417-116

    Abstract: 2SC5509 NE663M04 NE663M04-T2-A S21E
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 417-116 2SC5509 NE663M04-T2-A S21E

    ca 9088

    Abstract: 2SC5509 NE663M04 NE663M04-T2 S21E transistor c 6093
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 ca 9088 2SC5509 NE663M04-T2 S21E transistor c 6093

    ua 722 fc

    Abstract: 2SC5507 NE661M04 NE661M04-T2 S21E max10022
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz • NEW LOW PROFILE M04 PACKAGE:


    Original     		PDF NE661M04 IS21EI2 OT-343 NE661M04 ua 722 fc 2SC5507 NE661M04-T2 S21E max10022

    314-106

    Abstract: transistor c 6093 417-116 2SC5509 NE663M04 NE663M04-T2 S21E 10318 SOT-343 6428 flat
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 17 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz •


    Original     		PDF NE663M04 IS21EI2 OT-343 NE663M04 prov88 24-Hour 314-106 transistor c 6093 417-116 2SC5509 NE663M04-T2 S21E 10318 SOT-343 6428 flat

    NE688

    Abstract: S21E UPA814T UPA814T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original     		PDF UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1

    NEC 8701

    Abstract: NEC 7808 8 PIN IC 2267 nec 10170 2SC5704 NE662M16 NE662M16-T3-A S21E lc 7130 kf 8715
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE662M16 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz • NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm


    Original     		PDF NE662M16 NE662M16 NEC 8701 NEC 7808 8 PIN IC 2267 nec 10170 2SC5704 NE662M16-T3-A S21E lc 7130 kf 8715

    ic 7848

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 60 GHz • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm


    Original     		PDF NESG2030M04 OT-343 NESG2030M04 NE662M04 07e-12 05e-12 75e-9 25e-9 ic 7848

    Untitled

    Abstract: No abstract text available
    Text: NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm


    Original     		PDF NESG2030M04 OT-343 NESG2030M04

    transistor bf 458

    Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3

    VHF-UHF Band Low Noise Amplifier

    Abstract: marking lob
    Text: 2SC4315 SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS . Low Noise . NF=l.ldB, Unit in mm + 0.2 2.9 -0.3 Figure, High Gain. IS21ei 2=14dB f=lGHz i 2 »-E a 0.55 M A X I M U M RATINGS (Ta=25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC4315 IS21ei 012IGURE VHF-UHF Band Low Noise Amplifier marking lob

    transistor L44

    Abstract: chip die npn transistor ma4t856 l44 transistor npn C 1740
    Text: V a n A M P ct o m p a n y Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm PidB @ 1 GHz - 10 dBm PldB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fx • High Power Gain - IS21EI2 = 15 dB @ 1 GHz


    OCR Scan     		PDF IS21EI2 MA4T856 OT-23 OT-143 avail-8883 transistor L44 chip die npn transistor l44 transistor npn C 1740

    ne666

    Abstract: 21421 Series ic 74600 NE686
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz


    OCR Scan     		PDF IS21EI2 NE686 OT-143) NE68618-T1 NE68619-T1 NE68630-T1 ne666 21421 Series ic 74600

    tt 18934

    Abstract: 30i sot23 5140 SN 74500
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z


    OCR Scan     		PDF IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK 2GE INC 0A V A N TEK lim itit i o o o tsn T D AT-60585 Up to 6 GHz Low Noise ' Silicon Bipolar Transistor A vantek 85 Plastic Package Features • • Low Bias C u rren t O peration Low N o ise Figure: 1.4 dB typ ical at 1.0 G Hz 1.9 dB typ ical at 2.0 G Hz


    OCR Scan     		PDF AT-60585 AT-60585 T-31-19 310-371-8717or310-371-8478

    Untitled

    Abstract: No abstract text available
    Text: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-42010

    Untitled

    Abstract: No abstract text available
    Text: HE WLETT-PACKARD/ m CMPNTS blE D HEW LETT PACKARD • 4447554 DDG'ìflSS 3SS AT-60510 U P to 6 GHz Low Noise Silicon Bipolar Transistor Features 100 mil Package • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz


    OCR Scan     		PDF AT-60510 AT-60510

    Untitled

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS m blE D HEW LETT PACKARD • M44 7 5Ô M DDGT7fiS 10T « H P A AT-01635 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 micro-X Package Features 22.0 dBm typical Pi dB at 2.0 GHz 9.5 dB typical Gi dB at 2.0 GHz EMITTER High Gain-Bandwidth Product: 7.0 GHz typical fr


    OCR Scan     		PDF AT-01635 AT-01635

    avantek

    Abstract: Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. AT-64023 Avantek, Inc Avantek S
    Text: AVANTEK I NC 20E D AVANTEK • im n tb GOObSSfl AT-64023 Up to 4 GHz Linear Power Silicon Bipolar Transistor □ * Avantek 230 mil BeO Flange Package Features • High Output Power: 28.0 dBm typical Pi dBat 2.0 GHz 27.0 dBm typical Pi <jbat 4.0 GHz • High Gain at 1 dB Compression:


    OCR Scan     		PDF AT-64023 AT-64023 avantek Avantek amplifier ic cd 4081 AVANTEK transistor Avantek rf amplifier Avantek power amplifier Avantek, Inc. Avantek, Inc Avantek S