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Hirose Electric Co Ltd AP105-GT10R-2022S-A(64) Bench Top Tools
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2SA64 Datasheets (128)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA64	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SA64	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA64	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA64	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA64	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA64	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA640	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SA640	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
2SA640	Micro Electronics	Low Level and General Purpose Amplifiers	Scan	PDF
2SA640	Unknown	PNP Silicon Epitaxial Transistor, Audio Freq. Low Noise Amp	Scan	PDF
2SA640	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA640	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA640	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA640	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2SA640	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA640	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA640	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SA640	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA640	Unknown	Cross Reference Datasheet	Scan	PDF
2SA641	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF

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2SA64 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA647 Abstract: 2SC1157 Text: SavantIC Semiconductor Product Specification 2SC1157 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION	Original	PDF	2SC1157 O-202 2SA647 O-202) 300mA 300mA 100mA 2SA647 2SC1157
Untitled Abstract: No abstract text available Text: t One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA648 DESCRIPTION • Collector-Emitter Breakdown Voltage:V ( BR)CEO=-120V(Min.) • Wide Area of Safe Operation	Original	PDF	2SA648 -120V -25mA; -120V;
2SA646 Abstract: 2SC1156 Text: Inchange Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA646 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION	Original	PDF	2SC1156 O-202 2SA646 O-202) 300mA 300mA 100mA 2SA646 2SC1156
2sa649 Abstract: transistor a4u Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA649 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.) • Wide Area of Safe Operation	Original	PDF	2SA649 -150V -25mA; -150V; 2sa649 transistor a4u
2SA649 Abstract: transistor 2sa649 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA649 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.	Original	PDF	2SA649 -150V -25mA; -150V; 2SA649 transistor 2sa649
2SA1286H Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404 Text: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI	Original	PDF	BC586 BCF29 BCF29R BC179A 2SA643 2SA723 2SA723 2SA1286H 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
2SA64 Abstract: 2SA649 2SA649 equivalent Text: Inchange Semiconductor Product Specification 2SA649 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base	Original	PDF	2SA649 -150V; 2SA64 2SA649 2SA649 equivalent
2SA648 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SA648 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base	Original	PDF	2SA648 -120V; 2SA648
2sa649 Abstract: No abstract text available Text: SavantIC Semiconductor Product Specification 2SA649 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency and large power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base	Original	PDF	2SA649 -150V; 2sa649
2sa648 transistor Abstract: 2SA648 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA648 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.	Original	PDF	2SA648 -120V -25mA; -120V; 2sa648 transistor 2SA648
2SA646 Abstract: 2SC1156 TO-202 Package Text: SavantIC Semiconductor Product Specification 2SC1156 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA646 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION	Original	PDF	2SC1156 O-202 2SA646 O-202) 300mA 300mA 100mA 2SA646 2SC1156 TO-202 Package
2SA647 Abstract: 2SC1157 2SC115 Text: Inchange Semiconductor Product Specification 2SC1157 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING see Fig.2 PIN DESCRIPTION	Original	PDF	2SC1157 O-202 2SA647 O-202) 300mA 300mA 100mA 2SA647 2SC1157 2SC115
2SA648 Abstract: No abstract text available Text: AOK AOK Semiconductor Product Specification 2SA648 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation APPLICATIONS • For low frequency and large power s w itc h in g a p p lic a tio n s PINNING see Fig.2 PIN	OCR Scan	PDF	2SA648 -120V! 220MAX 13MAX
2SD261 Abstract: 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095 Text: 2SA643 2SA643 PNP x U S IL IC O N E P IT A X IA L T R A N S IS T O R Frequency Pow er A m p lifie r 1# /F E A T U R E S W E I/P A C K A G E DIMENSIONS Unit-.mm S u ita b le f o r aud io p o w er ou tp u t a p p lica tio n s. • a. 2. OW g S S r i i -5 r i: # T ' i -5»	OCR Scan	PDF	2SA643 2SD261 2SD261. 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095

Untitled Abstract: No abstract text available Text: Tab l e Item 4 à 2 A LTR. D A T E BY REV. D E S C R I PT DATE SCALE O C T .0 2 .2 0 01 2/1 No. UN I T mm I N C H N u m b e r Materials of Alignment Sleeves LGC-2SA641 Z i rc o n i a LG C -2SA641P P h o s p h o r b ro n z e Co lor:Wh i te Cap PBT R esin	OCR Scan	PDF	LGC-2SA641 -2SA641P
2SC644 Abstract: 2SC1222 2sC537 2SC1000 2SC1328 2SC828 P 2SC1327 2SA889 2SC923 2SA1015 Text: Low Level and General Purpose Amplifiers TY PE PO LA NO. RITY CASE M A XIM UM RATINGS Pd IC VCEO mW (mA) (V) H FE min VCE(sat) max fT Cob N.F. ic VCE max IC max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) m in 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P	OCR Scan	PDF	2SA641 O-92B 2SA666 2SA666A 2SA673A 2SA721 2SC644 2SC1222 2sC537 2SC1000 2SC1328 2SC828 P 2SC1327 2SA889 2SC923 2SA1015
2SA642 Abstract: 0J01 Text: Transistors 2SA642 USHA INDIA LTD BASE-EMITTER ON VOLTAGE lc (mA), COLLECTOR CURRENT STATIC CHARACTERISTIC V ce (V), CO LLECTOR-EM ITTER VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE hFE, DC CURRENT GAIN DC CURRENT GAIN V b e (V), BASE-EMITTER VOLTAGE	OCR Scan	PDF	2SA642 -0j01 2SA642 0J01
2SC923 Abstract: transistor 2sc923 2SA641 2SC923 E F 251C 300TYP PA33 Text: 2SA641 2SA641 PNP U rj > h a V J & / PNP S IL IC O N E P IT A X IA L T R A N S IS T O R A lu m in a P assivation) 9<tWm/PACKAGE Frequency High Gain A m p lifie r & DIMENSIONS (Unit:mm) ^/FEATURES iif e :3 o o ty p . a c = -o .5 m A ) • 2SC923 t y ? ') j> y ? ') T ' & j L Z o	OCR Scan	PDF	2SA641 300TYP. 2SC923 2SC923. SC-43 -100AÃ -20mA, 2SC923 transistor 2sc923 2SA641 2SC923 E F 251C 300TYP PA33
2SD227 Abstract: 2SA642 251C hFE-150 Text: 2SD227 2SD227 NPN X 7 j uf ëi / IJ 3 V h ^ V v X ^ / N P N SILICON EPITAXIAL TRANSISTOR ^3 S j± S ^]lilli f f l/ A u c li o Frequency A m p lifie r f t ^ /F E A T U R E S W M /P A C K A G E DIMENSIONS 500mw iigïH#3 f» • 2SA642 i ; 3 v y j ^ y f Suitable for output applications of 500mW portable radios in class B	OCR Scan	PDF	2SD227 500mW 2SA642 2SA642. W60/PACKAGE SC-43 IPA33 2SD227 251C hFE-150
2SA643 Abstract: No abstract text available Text: Transistors 2SA643 USHA INDIA LTD STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE V ce (V), COLLECTOR-EMITTER VOLTAGE 0.5 0.2 - 0.4 V b e (V ), - 0.6 - 0.8 - 1.0 - 1.2 BASE-EMITTER VOLTAGE DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE	OCR Scan	PDF	2SA643 2SA643
2SD227 Abstract: 2SA642 251C PA33 power transistor audio amplifier 500 watts Text: 2SA642 2SA642 PNP x + U =1 V h 7 V i / * ? / P N P SILICON EPIT A X IA L TRANSISTOR ffiS i& itiÌJÌftÌlffl/ A u d io Frequency Power Amplifier ft ^ / F E A T U R E S V tts . • «•JOT/PACKAGE DIMENSIONS Unit:mm Suitable fo r audio pow er o u tp u t applications.	OCR Scan	PDF	2SA642 500mW 2SD227 2SD227. -300mA* -300mA, 2SD227 2SA642 251C PA33 power transistor audio amplifier 500 watts
2SC644 Abstract: 2SC1000 2SA1715 2SC1222 2SC1330 2SC923 2SC828 2SC1815 2SA641 2SC372 Text: Low Level and General Purpose Amplifiers TYPE NO. POLA RITY CASE 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P P TO-92B TO-92B TO-92B TO-92B TO-92B 250 250 250 400 150 50 50 50 500 50 45 25 45 50 35 100 130 130 60 180 700 700 700 320 1040 2SA722 2SA876H 2SA888	OCR Scan	PDF	2SA641 O-92B 2SA666 2SA666A 2SA673A 2SA721 2SC644 2SC1000 2SA1715 2SC1222 2SC1330 2SC923 2SC828 2SC1815 2SC372
2Sc945 equivalent Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent Text: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 \| BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560	OCR Scan	PDF	2SA811 2SA812/2SA812R 2SB624/2SB624R 2S8736/2S8736R 907A/NTM 2907AR TM3906/NTM3906R BA811 BA812 2SA641 2Sc945 equivalent 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
2SA649 Abstract: No abstract text available Text: AOK Product Specification AOK Semiconductor 2SA649 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation APPLICATIONS • For low frequency and large power s w itc h in g a p p lic a tio n s PINNING see Fig.2 PIN	OCR Scan	PDF	2SA649 -150V; 13MAX

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2SA64 Search Results

2SA64 Price and Stock

Hirose Electric Co Ltd AP105-GT10R-2022S-A(64)

2SA64 Datasheets (128)

2SA64 Datasheets Context Search

2SA647

Untitled

2SA646

2sa649

2SA649

2SA1286H

2SA64

2SA648

2sa649

2sa648 transistor

2SA646

2SA647

2SA648

2SD261

Untitled

2SC644

2SA642

2SC923

2SD227

2SA643

2SD227

2SC644

2Sc945 equivalent

2SA649