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    2SC537 Price and Stock

    Rochester Electronics LLC 2SC5374A-TL-E

    2SC5374 - 10V, 100MA, FT=5.2 GHZ
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    DigiKey 2SC5374A-TL-E Bulk 1,413
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    onsemi 2SC5374A-TL-E

    RF TRANS NPN 10V 5.2GHZ SMCP
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    Rochester Electronics 2SC5374A-TL-E 45,000 1
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    Toshiba America Electronic Components 2SC5376-B,LF(B

    2SC5376-B,LF(B
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    Verical 2SC5376-B,LF(B 93,000 10,170
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    2SC5376-B,LF(B 30,000 10,170
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    Rochester Electronics 2SC5376-B,LF(B 123,000 1
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    Toshiba America Electronic Components 2SC5376-A,LF(B

    2SC5376-A,LF(B
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    Verical 2SC5376-A,LF(B 69,000 10,170
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    Rochester Electronics 2SC5376-A,LF(B 69,000 1
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    Aptina Imaging 2SC5374A-TL-E

    Trans RF BJT NPN 10V 0.1A 100mW 3-Pin SMCP T/R
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    Verical 2SC5374A-TL-E 45,000 1,729
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    Find more 2SC537 price and stock on Findchips.com

    2SC537 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC537 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC537 Micro Electronics Low Level and General Purpose Transistors Scan PDF
    2SC537 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC537 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC537 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC537 Unknown Cross Reference Datasheet Scan PDF
    2SC537 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC537 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC537 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC537 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC537 Unknown Vintage Transistor Datasheets Scan PDF
    2SC537 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC537 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC537 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SC537 Semico Audio Frequency Small Signal Transistors Scan PDF
    2SC5370 Allegro MicroSystems Silicon NPN Epitaxial Planar Transistor Original PDF
    2SC5370 Sanken Electric Power Transistor Selection Guide Original PDF
    2SC5370 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5371 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5372 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SC537 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5376

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •


    Original     		PDF 2SC5376 2SC5376

    2SC5379

    Abstract: No abstract text available
    Text: Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current


    Original     		PDF 2SC5379 2SC5379

    2SC5378

    Abstract: No abstract text available
    Text: Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 • Features 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		PDF 2SC5378 2SC5378

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) · High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •


    Original     		PDF 2SC5376

    2SC5374

    Abstract: ITR08173 ITR08174 ITR08168 ITR08169 ITR08170 ITR08171 ITR08172 n553
    Text: 注文コード No. N 5 5 3 5 A 2SC5374 No. N5535A 30700 開発速報 No ※ 5535 とさしかえてください。 2SC5374 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 帯発振 , 高周波増幅用 ・高利得である：⏐S21e⏐2=10.5dB typ（f=1GHz）


    Original     		PDF 2SC5374 N5535A S21e2 S21e2 2SC5374 ITR08173 ITR08174 ITR08168 ITR08169 ITR08170 ITR08171 ITR08172 n553

    2SC5376FV

    Abstract: sat 1205
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •


    Original     		PDF 2SC5376FV 2SC5376FV sat 1205

    2SC5376

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ·


    Original     		PDF 2SC5376 2SC5376

    2SC5376F

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F 2SC5376F

    TRANSISTOR KT 837

    Abstract: a1046 transistor A1046 A1684
    Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB • High gain : typ f=1GHz . · High cutoff frequency : fT=5.2GHz typ. unit:mm


    Original     		PDF ENN5535A 2SC5374 2SC5374] TRANSISTOR KT 837 a1046 transistor A1046 A1684

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •


    Original     		PDF 2SC5376

    ITR06394

    Abstract: ITR06395 ITR06396 ITR06397 ITR08172 a1088
    Text: 2SC5375A Ordering number : ENA1088 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5375A VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • • High gain : ⏐S21e⏐2=10dB typ f=1GHz . High cut-off frequency : fT=5.2GHz typ.


    Original     		PDF 2SC5375A ENA1088 S21e2 A1088-6/6 ITR06394 ITR06395 ITR06396 ITR06397 ITR08172 a1088

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)


    Original     		PDF 2SC5376F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage


    Original     		PDF 2SC5376FV

    2SC5379

    Abstract: SC-75
    Text: Transistors 2SC5379 Silicon NPN epitaxial planar type For low-voltage low-noise high-frequency oscillation Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)


    Original     		PDF 2SC5379 2SC5379 SC-75

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.4 1 2 3 Rating Unit Collector-base voltage


    Original     		PDF 2SC5376FV

    1005 7J

    Abstract: 2SC5376CT BK500
    Text: 2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5376CT General Purpose Amplifier Applications Switching and Muting Switch Applications Unit: mm 0.6±0.05 @IC = 10 mA/IB = 0.5 mA ３ 1.0±0.05 • Large collector current: IC = 400 mA (max)


    Original     		PDF 2SC5376CT 1005 7J 2SC5376CT BK500

    2SC5370

    Abstract: FM20
    Text: 2SC5370 Silicon NPN Epitaxial Planar Transistor 40 V IEBO VEBO 7 V V BR CEO IC 12 A Ratings Unit VCB=60V 10max µA Conditions VEB=7V 10max µA IC=25mA 40min V hFE VCE=2V, IC=6A 70min∗ IB 3 A VCE(sat) IC=6A, IB=0.3A 0.3max PC 30(Tc=25°C) W VBE(sat) IC=6A, IB=0.3A


    Original     		PDF 2SC5370 10max 40min 70min 90typ 120typ O220F) 2SC5370 FM20

    2SC5379

    Abstract: No abstract text available
    Text: Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 2 V Collector current


    Original     		PDF 2SC5379 2SC5379

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)


    OCR Scan     		PDF 2SC5376 400mA OL44IUSYMBOL

    2SC5376

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V ce sat (l) = 15mV (Typ.) @ Iq = 10mA /Ig = 0.5mA


    OCR Scan     		PDF 2SC5376 400mA 2SC5376

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS Low Collector Saturation Voltage : Vc e sat (l) = 15mV (Typ.) @ l£ = 10mA / 1]3 = 0.5mA


    OCR Scan     		PDF 2SC5376 400mA 10//S