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    2SA1771 Search Results

    2SA1771 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1771 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SA1771 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1771 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1771 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1771 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1771 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1771 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1771 Toshiba Silicon PNP transistor for high current switching applications Scan PDF
    2SA1771 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE Scan PDF
    2SA1771F Toshiba 2SA1771F - Trans GP BJT PNP 80V 12A 3-Pin(3+Tab) TO-220NIS Original PDF

    2SA1771 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1771

    Abstract: 2SA1771
    Text: 2SA1771 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1771 High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE sat = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 0.6 s (typ.) • High emitter-base breakdown voltage: V (BR) EBO = −14 V (min)


    Original     		PDF 2SA1771 a1771 2SA1771

    2SA1771

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1771 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter


    Original     		PDF 2SA1771 O-220F O-220F) 2SA1771

    a1771

    Abstract: No abstract text available
    Text: 2SA1771 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1771 High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE sat = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 0.6 µs (typ.) • High emitter-base breakdown voltage: V (BR) EBO = −14 V (min)


    Original     		PDF 2SA1771 SC-67 2-10R1A a1771

    a1771

    Abstract: 2SA1771
    Text: 2SA1771 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1771 High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE sat = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 0.6 µs (typ.) • High emitter-base breakdown voltage: V (BR) EBO = −14 V (min)


    Original     		PDF 2SA1771 a1771 2SA1771

    Untitled

    Abstract: No abstract text available
    Text: 2SA1771 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1771 High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE sat = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 0.6 µs (typ.) • High emitter-base breakdown voltage: V (BR) EBO = −14 V (min)


    Original     		PDF 2SA1771

    2sa1771

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1771 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -0.4V(Max)@ IC= -6A APPLICATIONS ·Designed for high current switching applications.


    Original     		PDF 2SA1771 2sa1771

    2SA1771

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1771 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching PINNING PIN DESCRIPTION 1 Base 2 Collector


    Original     		PDF 2SA1771 O-220F O-220F) 2SA1771

    2SA1771

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SA1771 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching PINNING PIN DESCRIPTION 1 Base 2 Collector


    Original     		PDF 2SA1771 O-220F O-220F) 2SA1771

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    a1771

    Abstract: 2SA1771
    Text: 2SA1771 TO SH IBA 2 S A 1 771 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE sat ~ —0.4V (Max.) (at 1^ = —6A) High Speed Switching Time : tgtg = 0.6;i*s (Typ.)


    OCR Scan     		PDF 2SA1771 a1771 2SA1771

    Untitled

    Abstract: No abstract text available
    Text: 2SA1771 T O SH IB A 2 S A 1 771 TO SH IBA TRANSISTO R SILICON PNP EPITA XIA L TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIO N S Low Collector Saturation Voltage : VCE sat = “ 0.4V (Max.) (at IC = -6 A ) High Speed Switching Time : tstg = 0.6/*s (Typ.)


    OCR Scan     		PDF 2SA1771

    A1771

    Abstract: 2SA1771 toshiba ic-700
    Text: TO SH IBA 2SA1771 2 S A 1 771 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE sat ~ —0.4V (Max.) (at 1^ = —6A) High Speed Switching Time : tgtg = 0.6;i*s (Typ.)


    OCR Scan     		PDF 2SA1771 A1771 2SA1771 toshiba ic-700

    Untitled

    Abstract: No abstract text available
    Text: 2SA1771 SILICON PNP EPITAXIAL TYPE U nit in mm HIGH CURRENT SW ITCHIN G APPLICATIONS. • • • 10 ±0.3 Low Collector Saturation Voltage : v CE sat = -0.4V (Max.) (at Ic = -6A ) High Speed Switching Time : tstg = 0.6//s (Typ.) High Emitter-Base Breakdown Voltage


    OCR Scan     		PDF 2SA1771 SC-67 2-10R1A 20/js

    A1771

    Abstract: 2SA1771
    Text: 2SA1771 TOSHIBA 2 S A 1 771 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE sat “ -0 -4V (Max.) (at I q = -6A ) High Speed Switching Time : tgtg = 0.6;i*s (Typ.) High Emitter-Base Breakdown Voltage


    OCR Scan     		PDF 2SA1771 A1771 2SA1771

    15P3

    Abstract: 25X2 2SA1771 T0-220F
    Text: AOK P ro d u c t Specification AOK Semiconductor S ilic o n P N P P o w e r T r a n s is t o r s 2SA1771 D E S C R IP T IO N • W ith T 0 - 2 2 0 F package • Low collector saturation voltage • High sp e e d sw itching time A P P L IC A T IO N S • High current switching


    OCR Scan     		PDF 2SA1771 T0-220F 2SA1771 15P3 25X2

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    Untitled

    Abstract: No abstract text available
    Text: 1. Ratings of Transistors 1.1. Maximum ratings of transistors ercised not to exceed any o f the absolute m axi­ mum ratings, w hile tak in g into account flu ctu ­ ation o f the supply voltage, deviation in prop­ erties o f the electrical com ponents, exceed ing


    OCR Scan     		PDF