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    2SA1123 TRANSISTOR Search Results

    2SA1123 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1123 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1123

    Abstract: 2SC2361 TO-220C
    Text: SavantIC Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1


    Original     		PDF 2SC2361 O-220C 2SA1123 2SA1123 2SC2361 TO-220C

    2SC2361

    Abstract: 2sa1123
    Text: Inchange Semiconductor Product Specification 2SC2361 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION


    Original     		PDF 2SC2361 O-220C 2SA1123 2SC2361 2sa1123

    2SC2631

    Abstract: 2SA1123
    Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.


    Original     		PDF 2SC2631 2SA1123 100MHz 2SC2631 2SA1123

    2SA1123

    Abstract: 2SC2631
    Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm ● ● ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.


    Original     		PDF 2SC2631 2SA1123 2SA1123 2SC2631

    2SA1123

    Abstract: 2SC2631 2sa1123 transistor
    Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.


    Original     		PDF 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631 2sa1123 transistor

    2SA1123

    Abstract: 2SC2631 SC-43A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.1±0.2 0.7±0.2 • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC2631 2SA1123 2SA1123 2SC2631 SC-43A

    2SA1123

    Abstract: 2SC2631 SC-43A 2sa112
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.1±0.2 0.7±0.2 • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC2631 2SA1123 2SA1123 2SC2631 SC-43A 2sa112

    2SA1123

    Abstract: 2SC2631 2sa1123 transistor
    Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.


    Original     		PDF 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631 2sa1123 transistor

    2SA1123

    Abstract: 2SC2631
    Text: Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    2SA1123

    Abstract: 2SC2631
    Text: Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO.


    Original     		PDF 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    2SA1123

    Abstract: 2SC2631
    Text: Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 5.0±0.2 ● 0.7±0.1 12.9±0.5 ● Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO.


    Original     		PDF 2SC2631 2SA1123 2SA1123 2SC2631

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631

    2SA1123

    Abstract: 2SC2631
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    2SA1123

    Abstract: 2SC2631
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 0.7±0.2 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631, 2SA1123 2SC2631

    2SA114

    Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF


    Original     		PDF PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 2SA114 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119

    2SA1123

    Abstract: 2SC2631 SC-43A
    Text: Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE • High collector-emitter voltage Base open VCEO


    Original     		PDF 2SC2631 2SA1123 2SA1123 2SC2631 SC-43A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC2631 2SA1123

    2sc2631

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC2631 Silicon NPN epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SA1123 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory linearity of forward current transfer ratio hFE


    Original     		PDF 2002/95/EC) 2SC2631 2SA1123 2sc2631

    2SA1123

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631, 2SA1123

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631,

    2SD2529

    Abstract: 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601
    Text: ; •Silicon Small Signal Transistors / ! ; # General-use Low Frequency Amplifiers and Others I 2SB1462 12SD2216 1 2SA1791 General­ is e low freq. ampli­ fier 12SC4656 f 2SB1218A 12SD1819A 2SB1219/A I 2SD1820/A i 2SB709A I 2SD601A 1 2SB710/A I 2SD602/A


    OCR Scan     		PDF 2SB642 2SA1619/A 2SB1322A 2SB1462 12SD2216 2SB1218A 12SD1819A 2SB1219/A 2SA921 2SD2258 2SD2529 2SB1627 2SC3312 2SD1010 2SD1993 2SD1995 2SB642 2SB1600 2sd661 2SB1601

    2SB1446

    Abstract: 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632
    Text: •Silicon Small Signal Transistors # General-use Low Frequency Amplifiers and Others Package No. SS-Mini Type (D1 ) S-Mini Type (D5) I 2SB1462 ' 2SB1218A . 2SD2216 2SD1819A : 2SB1219/A i 2SD1820/A i 2SA1791 i 2SC4656 Mini Type (D12) New S Type (034) ! 2SB709A


    OCR Scan     		PDF 2SB1462 2SB1218A 2SD1819A 2SB1219/A 2SD1820/A 2SB709A 2SD601A 2SB710/A 2SD602/A 2SA1309A 2SB1446 2SD2458 2sc5335 2SD1010 2SD1993 2SD1995 2SB642 2SD119 2SD2456 2SC2632

    2SD2458

    Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
    Text: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type


    OCR Scan     		PDF O-92NL 2SB1462 2SD2216 2SB1218A I2SD1819A 2SB709A 2SD601A 2SB1627 I2SD2496 2SA1309A 2SD2458 2SD2436 2SD2434 2SB1600 2SB642 2SD2433 2SD1010 2sB774 transistor HOA1404-2

    A1534

    Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin


    OCR Scan     		PDF T0-92 T092L: T0220F T0220 T092NL A1534 T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A