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    2SA1309A Search Results

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    2SA1309A Price and Stock

    Panasonic Electronic Components 2SA1309AQA

    TRANS PNP 50V 0.1A NS-B1
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    DigiKey 2SA1309AQA Ammo Pack
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    Panasonic Electronic Components 2SA1309ARA

    TRANS PNP 50V 0.1A NS-B1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1309ARA Ammo Pack 5,000
    • 1 -
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    • 10000 $0.0566
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    Panasonic Electronic Components 2SA1309ASA

    TRANS PNP 50V 0.1A NS-B1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1309ASA Ammo Pack 5,000
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    Bristol Electronics 2SA1309ASA 15,000 3
    • 1 -
    • 10 $1.875
    • 100 $0.7031
    • 1000 $0.4875
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    Quest Components 2SA1309ASA 12,000
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $2.5
    • 10000 $0.55
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    Panasonic Electronic Components 2SA1309A0A

    TRANS PNP 50V 0.1A NS-B1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1309A0A Ammo Pack 5,000
    • 1 -
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    • 100 -
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    • 10000 $0.0566
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    Panasonic Electronic Components 2SA1309A-S(TA)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2SA1309A-S(TA) 15,000 3
    • 1 -
    • 10 $1.875
    • 100 $0.7031
    • 1000 $0.4875
    • 10000 $0.4875
    		Buy Now
    Quest Components 2SA1309A-S(TA) 12,000
    • 1 $2.5
    • 10 $2.5
    • 100 $2.5
    • 1000 $2.5
    • 10000 $0.55
    		Buy Now
    Find more 2SA1309A price and stock on Findchips.com

    2SA1309A Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1309A Panasonic PNP Transistor Original PDF
    2SA1309A Panasonic Silicon PNP epitaxial planer type Original PDF
    2SA1309A Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309A Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1309A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1309A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1309A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1309A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1309A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1309A0A Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP AF AMP 50V 100MA NEW S Original PDF
    2SA1309AQ Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309AQ Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309AQA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP LF 50VCEO NEW S TYPE Original PDF
    2SA1309AR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309AR Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309ARA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP LF 50VCEO NEW S TYPE Original PDF
    2SA1309AS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309AS Panasonic Silicon PNP Epitaxial Planar Type Transistor Original PDF
    2SA1309ASA Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP LF 50VCEO NEW S TYPE Original PDF

    2SA1309A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60


    Original     		PDF O-92S 2SA1309A O-92S -50mA, 200MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Forward Current Transfer Ratio hFE. z Allowing Supply with the Radial Taping. z Optimum for High-density Mounting.


    Original     		PDF O-92S 2SA1309A 2SC3311A -50mA 200MHz

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5


    Original     		PDF 2002/95/EC) 2SC3311A 2SA1309A

    2SA1309A

    Abstract: 2SC3311A
    Text: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage


    Original     		PDF 2SA1309A 2SC3311A 2SA1309A 2SC3311A

    2SA1309A

    Abstract: 2SC3311A
    Text: Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping


    Original     		PDF 2SC3311A 2SA1309A 2SA1309A 2SC3311A

    2SA1309A

    Abstract: 2SC3311A
    Text: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage


    Original     		PDF 2SA1309A 2SC3311A 2SA1309A 2SC3311A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi


    Original     		PDF 2002/95/EC) 2SC3311A 2SA1309A

    2SA1309A

    Abstract: 2SC3311A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) Th an


    Original     		PDF 2002/95/EC) 2SA1309A 2SC3311A 2SA1309A 2SC3311A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.


    Original     		PDF 2002/95/EC) 2SA1309A 2SC3311A

    2SC3311A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5


    Original     		PDF 2002/95/EC) 2SC3311A 2SA1309A 2SC3311A

    2SA1309A

    Abstract: 2SC3311A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) Th an W is k y


    Original     		PDF 2002/95/EC) 2SC3311A 2SA1309A 2SA1309A 2SC3311A

    NV TRANSISTOR 2sc3311a

    Abstract: 2SA1309A 2SC3311A 2SC3311A Q 2sc331
    Text: Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original     		PDF 2SC3311A 2SA1309A NV TRANSISTOR 2sc3311a 2SA1309A 2SC3311A 2SC3311A Q 2sc331

    2SA1309A

    Abstract: 2SC3311A
    Text: Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • High forward current transfer ratio hFE • Allowing supply with the radial taping


    Original     		PDF 2SA1309A 2SC3311A 2SA1309A 2SC3311A

    2SA1309A

    Abstract: 2SA1309A R
    Text: 2SA1309A 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SA1309A O-92S -50mA, 200MHz 2SA1309A 2SA1309A R

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.


    Original     		PDF 2002/95/EC) 2SA1309A 2SC3311A

    NV TRANSISTOR 2sc3311a

    Abstract: 2SA1309A 2SC3311A
    Text: Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage


    Original     		PDF 2SC3311A 2SA1309A NV TRANSISTOR 2sc3311a 2SA1309A 2SC3311A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi


    Original     		PDF 2002/95/EC) 2SA1309A 2SC3311A

    2SA1309A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.1 A ICM Collector-base voltage V V(BR)CBO : -60


    Original     		PDF O-92S 2SA1309A O-92S -50mA, 200MHz 2SA1309A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for High-density Mounting z Allowing Supply with the Radial Taping z Complementary to 2SA1309A 2. COLLECTOR


    Original     		PDF O-92S 2SC3311A 2SA1309A 100mA 200MHz

    2SA1309A

    Abstract: TO92S
    Text: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.1 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		PDF O-92S 2SA1309A O-92S -50mA, 200MHz 2SA1309A TO92S

    2SA1309A

    Abstract: 2SC3311A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF 2002/95/EC) 2SA1309A 2SC3311A 2SA1309A 2SC3311A

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2SA1115

    Abstract: 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 2SA1309A DTA124ES 2SA1015 2SA1018
    Text: - 28 - a S € Type No. « Manuf. = 2SA 1317 ' 2SA 1318 - ft 2SA 1319 „ m * SANYO TOSHIBA NEC iK/nruß 2SAU75 2SA1015 2SA953 tL HITACHI 2SA1032 ü it iM FUJITSU tö T MATSUSHITA = m MITSUBISHI 2SA1309A 2SA1115 □ — A ROHM 2SA933S 2SA933 2SA1309A 2SA965


    OCR Scan     		PDF 2SAU75 2SA953 2SA1032 2SA1309A 2SA1018 2SA879 2SA1115 2SA933S 2SA933 2SA1115 2SA1115 E DTA124EK RT1P141C 2SA1175 2sa564 DTA124ES 2SA1015

    NEC 1357

    Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
    Text: 29 - a « a « Manuf. Type No. ;¥ Z SANYO U 2 TOSHIBA B S NEC ÌL HITACHI m ± FUJITSU ì1 tfl T MATSUSHITA a £ 2SA953 2SA1309A 2S A 1352 Z 2SA1142 2SA914 2 SA Z 2 S A 1 3 51 / 1 353 > h m. MITSUBISHI □ — ROHM A 2SA937 2SB1011 # 2SA1156 2SB1011 2SB942A


    OCR Scan     		PDF 2SA1351, 2SA1352, 2SA953 2SA1309A 2SA914 2SB1011 2SA937 2SA1142 2SA1700 2SB825 NEC 1357 2sa1175 2SB710 2SA937 2SA1091 2SA953 2sa1361 2SA1142