2SB946
Abstract: 2SD1271
Text: Inchange Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications
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2SB946
O-220Fa
2SD1271
2SB946
2SD1271
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2SD1271
Abstract: 2SD1271A
Text: SavantIC Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SB946/946A ·Low collector saturation voltage ·Good linearity of hFE ·Large collector current IC APPLICATIONS
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2SD1271
2SD1271A
O-220Fa
2SB946/946A
O-220Fa)
2SD1271
2SD1271A
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2SB946
Abstract: 2SD1271
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271 APPLICATIONS
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2SB946
2SD1271
-100V
10MHz
2SB946
2SD1271
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2SB946A
Abstract: 2SD1271A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS
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2SB946A
2SD1271A
-100V
10MHz
2SB946A
2SD1271A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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2002/95/EC)
2SB0946
2SB946)
2SD1271
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2SB946
Abstract: 2SD1271
Text: SavantIC Semiconductor Product Specification 2SB946 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SD1271 ·Low saturation voltage ·Good linearity of hFE ·High current APPLICATIONS ·For power switching applications
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2SB946
O-220Fa
2SD1271
2SB946
2SD1271
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 16.7±0.3 14.0±0.5 Parameter Symbol
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2002/95/EC)
2SB0946
2SB946)
2SD1271
SC-67
O-220F-A1
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2SB946A
Abstract: 2SD1271A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB946A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -5A ·Good Linearity of hFE ·Large Collector Current IC ·Complement to Type 2SD1271A APPLICATIONS
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2SB946A
2SD1271A
-100V
10MHz
2SB946A
2SD1271A
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2SB946
Abstract: 2SD1271
Text: JMnic Product Specification 2SB946 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1271 ・Low saturation voltage ・Good linearity of hFE ・High current APPLICATIONS ・For power switching applications PINNING
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2SB946
O-220Fa
2SD1271
2SB946
2SD1271
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2SB946A
Abstract: 2SD1271 2SB0946 2SB946 2SD1271A
Text: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 2SB946 and 2SB0946A (2SB946A) Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1271 base voltage
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2SD1271,
2SD1271A
2SB0946
2SB946)
2SB0946A
2SB946A)
2SD1271
2SB946A
2SD1271
2SB0946
2SB946
2SD1271A
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2SB946
Abstract: 2SD1271
Text: Power Transistors 2SB946 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage
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2SB946
2SD1271
2SB946
2SD1271
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2SB0946
Abstract: 2SB946 2SD1271
Text: Power Transistors 2SB0946 2SB946 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open)
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2SB0946
2SB946)
2SD1271
SC-67
O-220F-A1
2SB0946
2SB946
2SD1271
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2SB0946
Abstract: 2SB946 2SD1271
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 4.2±0.2 M Di ain sc te on na tin nc ue e/ d Parameter Collector-emitter voltage (Base open)
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2002/95/EC)
2SB0946
2SB946)
2SD1271
SC-67
O-220F-A1
2SB0946
2SB946
2SD1271
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2SB0946
Abstract: 2SB946 2SD1271
Text: Power Transistors 2SB0946 2SB946 Silicon PNP epitaxial planar type Unit: mm 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one
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2SB0946
2SB946)
2SD1271
SC-67
O-220F
2SB0946
2SB946
2SD1271
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2SD1271
Abstract: 2SD1271A
Text: Inchange Semiconductor Product Specification 2SD1271 2SD1271A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB946/946A ・Low collector saturation voltage ・Good linearity of hFE ・Large collector current IC
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2SD1271
2SD1271A
O-220Fa
2SB946/946A
O-220Fa)
2SD1271
2SD1271A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0946 (2SB946) Silicon PNP epitaxial planar type For power switching Complementary to 2SD1271 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130
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PDF
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2002/95/EC)
2SB0946
2SB946)
2SD1271
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2SB946A
Abstract: 2SB946 2SD1271 2SD1271A
Text: Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB946 and 2SB946A Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SD1271 base voltage 2SD1271A Collector to
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2SD1271,
2SD1271A
2SB946
2SB946A
2SD1271
2SB946A
2SD1271
2SD1271A
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2SB0946
Abstract: 2SB946 2SD1271
Text: Power Transistors 2SB0946 2SB946 Silicon PNP epitaxial planar type Unit: mm 16.7±0.3 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be installed to the heat sink with one
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2SB0946
2SB946)
2SD1271
SC-67
O-220F-A1
2SB0946
2SB946
2SD1271
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB946 2SB946 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1271 • Features • • • • Unit ! mm 4.4 max. 10.2max. 5.7 max. 2.9 max. Low collector-emitter saturation voltage VcE<sao
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2SB946
2SD1271
2SB951/A)
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2SB1013
Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Text: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018
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2SB884
2SB679
2SB1105
2SB949
2SB1226
2SB1402
2SB949A
2SB1131
2SA1431
2SB1117
2SB1013
2S897
2SB1315
2SA1307
2SB1306
2sb631 hitachi
2SB747
1318J
2SB679
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2SB94
Abstract: 2SB946 2SD1271
Text: Power Transistors 2SB94Ó 2SB946 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1271 Unit ! mm 4.4max. 10.2max. • Features • Low collector-em itter saturation voltage V c E < s a t> • Good linearity of DC current gain (Iife)
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2SB94Ã
2SB946
2SD1271
2SB951/A)
2SB94
2SB946
2SD1271
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2SD1539
Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Text: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5
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O-126
O-202
T0-220
O-220F
2SA1605
2SC2258
2SC3063
2SC2923
2SC4714
2SC3942
2SD1539
d53 pnp transistor
2sa137
2sb1071
2SA1375
2SA1605
2SA1817
2SC2258
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