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Microchip Technology Inc 2N5877 PNP POWER TRANSISTOR SILICON AMP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5877	Bulk			100	1 - 10 - 100 $62.5401 1000 $62.5401 10000 $62.5401	Buy Now
Avnet Americas	2N5877	Bulk		36 Weeks	100	1 $65.9932 10 $65.9932 100 $58.2075 1000 $60.82722 10000 $60.82722	Buy Now
Mouser Electronics	2N5877					1 - 10 - 100 $67.34 1000 $67.34 10000 $67.34	Get Quote
Newark	2N5877	Bulk			100	1 - 10 - 100 $62.54 1000 $60.13 10000 $60.13	Buy Now
Microchip Technology Inc	2N5877			36 Weeks		1 $67.34 10 $67.34 100 $67.34 1000 $67.34 10000 $67.34	Buy Now

Onlinecomponents.com	2N5877					1 - 10 - 100 $59.7 1000 $59.7 10000 $59.7	Buy Now
NAC	2N5877	Tray			5	1 $68.7 10 $68.7 100 $63.28 1000 $58.65 10000 $58.65	Buy Now
Master Electronics	2N5877					1 - 10 - 100 $59.7 1000 $59.7 10000 $59.7	Buy Now
Motorola Semiconductor Products 2N5877
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5877		42			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N5877		1			1 $10.0524 10 $8.377 100 $8.377 1000 $8.377 10000 $8.377	Buy Now
RCA 2N5877 POWER BIPOLAR TRANSISTOR, 10A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5877		19			1 $52 10 $52 100 $50 1000 $50 10000 $50	Buy Now
STMicroelectronics 2N5877 POWER BIPOLAR TRANSISTOR, 10A I(C), 60V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AA, METAL, 2 PIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5877		13			1 $3.36 10 $2.24 100 $1.68 1000 $1.68 10000 $1.68	Buy Now

2N5877 Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5877	On Semiconductor	10 AMPERE COMPLEMENTARY	Original	PDF
2N5877	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N5877	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5877	API Electronics	Short form transistor data	Short Form	PDF
2N5877	Central Semiconductor	Complementary Silicon Power Transistors, TO-3	Scan	PDF
2N5877	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF
2N5877	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF
2N5877	Diode Transistor	35 to 500V Transistor Selection Guide	Scan	PDF
2N5877	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5877	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5877	Mospec	POWER TRANSISTORS(10A,150W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=10 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N5877	Mospec	Complementary Silicon High-Power Transistor	Scan	PDF
2N5877	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5877	Motorola	The European Selection Data Book 1976	Scan	PDF

2N5877	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5877	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N5877	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5877	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5877	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5877	Unknown	Transistor Replacements	Scan	PDF

2N5877 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5875 Abstract: 2N5876 2N5877 2N5878 Text: SavantIC Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5877 2N5878 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	PDF	2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878
b0245a Abstract: b0607 PH3055T FT3055 SOLITRON B0501A MJE280H MJE2801K MJE3055K Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 2N5877 SOT7732 SOT7732 SOT7732 SOT7742 SOT7742 SOT7742 SOT7762 ~g:gg~~ 35 40 SOT7012 SOT7475 2N2811 OTL8012 SOT3226 SOT3226 SOT3226 SOT85307 SD+;5~01 45 50 55 60 65 70 SOT85507 SOT85607 SOT85607	Original	PDF	B0207 BOW21A B0501A OT7618 FT3055 SSP66A 2N6098 2N6099 b0245a b0607 PH3055T SOLITRON MJE280H MJE2801K MJE3055K
Untitled Abstract: No abstract text available Text: 2N5877 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5877 O204AA) 18-Jun-02
2N5877 Abstract: 2N5875 Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS	Original	PDF	2N5875 2N5877 O-204AA) 2N5875 2N5877
2N5878 motorola Abstract: motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100 Text: MOTOROLA Order this document by 2N5877/D SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	Original	PDF	2N5877/D* 2N5877/D 2N5878 motorola motorola 2N5877 2N5877 2N5877 power transistor 2N5878 2n5875 motorola 1N5825 2N5875 2N5876 MSD6100
2N5878 Abstract: 2N5877 2N5875 2N5876 Text: SavantIC Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5875 2N5876 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	PDF	2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876
Untitled Abstract: No abstract text available Text: 2N5877 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5877 O204AA) 16-Jul-02
2N5877 Abstract: No abstract text available Text: 2N5877 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5877 O204AA) 31-Jul-02 2N5877
2N5877 Abstract: 2N5878 2N5875 2N5876 Text: Inchange Semiconductor Product Specification 2N5877 2N5878 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5875 2N5876 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5877 2N5878 2N5875 2N5876 2N5877 2N5878 2N5876
2N5877 Abstract: No abstract text available Text: 2N5877 Complementary silicon high-power transistor 7.70 Transistors Tr. 1 of 1 Home Part Number: 2N5877 Online Store 2N5877 Diodes C o m plem entary s ilico n high- po w er t ransis t o r Transistors	Original	PDF	2N5877 com/2n5877 2N5877
2N5875 Abstract: 2N5876 2N5877 2N5878 Text: Inchange Semiconductor Product Specification 2N5875 2N5876 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5877 2N5878 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5875 2N5876 2N5877 2N5878 2N5875 2N5876 2N5878
Untitled Abstract: No abstract text available Text: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5875 PNP 2N5877 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS	Original	PDF	2N5875 2N5877 O-204AA)
BU108 Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS	Original	PDF	2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
2N5877 Abstract: 2N5878 Text: TYPES 2N5877, 2N5878 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS TYPES 2N5877, 2 N 5878 BULLETIN NO. DL-S 7111624, DECEMBER FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D E SIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5875, 2N 58 76	OCR Scan	PDF	2N5877, 2N5878 2N5877 2N5877

2N5876 Abstract: 2N5875 2N5878 2N5877 Text: ÆAMOS PEC COMPLEMENTARY SILICON PNP 2N5875 2N5876 HIGH-POWER TRANSISTORS General-purpose power amplifier and switching applications NPN 2N5877 2N5878 FEATURES: * Low Collector-Emitter Saturation Voltage v c b s a t = 1.0V Max.)@lc=5.0A * Execllent DC Current Gain hFE = 20 ~ 100 @ lc = 4.0 A	OCR Scan	PDF	2N5875 2N5877 2N5876 2N5878 2N5877 2N5878 2N5876,
Untitled Abstract: No abstract text available Text: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.	OCR Scan	PDF	2N5875-2N5876 2N5877-2N5878 2N5877 2N5878 2N5875 2N5876 hFE-10 2N5875/6/7/8
2N5877 Abstract: 2N5878 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors M otoroli Preferred D v lc* . . . designed for general-purpose power amplifier and switching applications. • • • • 10 AMPERE COMPLEMENTARY SILICON	OCR Scan	PDF	2N5877 2N5878 2N5878
23487 Abstract: 2N60G3 23472 Text: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634	OCR Scan	PDF	STD60 NPN-19 23487 2N60G3 23472
2N5876 Abstract: 2N5878 2N5875 2N5877 Text: Datasheet c c v n iD i Semiconductor Corp. 2N5875 2N5876 PNP 2N5877 2N5878 NPN C O M P L EMENTARY SILICON POWER TRANSISTORS 145 A d a m s Avenue, Hauppauge, N Y 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	2N5875 2N5876 2N5877 2N5878 2N5875, 200mA
2N5876 Abstract: 2N5875 Text: TYPES 2N587S, 2NS876 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS • TYPES 2N5875, 2N5876 BULLETIN NO. OL-S 7111608, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N5877, 2N5878 150 Watts at 25°C Case Temperature	OCR Scan	PDF	2N587S, 2NS876 2N5877, 2N5878 2N5875, 2N5876 2N5875
BU4060 Abstract: BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D Text: CRIMSON S E M I C O N D U C T OR INC DE~\| 2 5 1MCHfc. ODDOBBS 2514096 CRIMSON SEMICONDUCTOR INC . 99D 00335 T3S-o/ D EPITAXIAL BASH TO-3 continued NPN PNP 2N 3716 2N 5873 2N 5874 2N5877 2N5878 2N6055 2N 6056 2N 6057 2N 6058 2N 6059 2N3792 2N5871 2N5872 2N 5875	OCR Scan	PDF	5S14D 33-O/ 2N3716 2N3792 2N5873 2N5871 2N5874 2N5872 2N5877 2N5875 BU4060 BU409 2N5876 BD376 2n5b77 b0375 BD136 BD375 bu406d BU407D
2n5875 motorola Abstract: 2N5876 2N5878 2N5875 2N5877 2N5875 2N5876 Text: M O T O R O L A SC XSTRS/R F - 3 3 - 7 3 1 EE D I b 3 b ? 2 5 M Q O Ö M S b S 2 \| 1 7 = 3 3 -/3 PNP 2N5875, 2N5876 NPN 2N5877, 2N5878 MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS	OCR Scan	PDF	2N5875, 2N5876 2N5877, 2N5878 2n5875 motorola 2N5878 2N5875 2N5877 2N5875 2N5876
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2N5866 Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75	OCR Scan	PDF	5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

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2N5877 Datasheets (35)

2N5877 Datasheets Context Search

2N5875

b0245a

Untitled

2N5877

2N5878 motorola

2N5878

Untitled

2N5877

2N5877

2N5877

2N5875

Untitled

BU108

2N5877

2N5876

Untitled

2N5877

23487

2N5876

2N5876

BU4060

2n5875 motorola

IC HXJ 2038

2N5866