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    FT3055 Price and Stock

    Rochester Electronics LLC MMFT3055ET1

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey MMFT3055ET1 Bulk 1,158
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    onsemi MMFT3055ET1

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    Bristol Electronics MMFT3055ET1 2,220
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    Rochester Electronics MMFT3055ET1 64,066 1
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    onsemi MMFT3055VT1

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    Bristol Electronics MMFT3055VT1 1,118
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    ComSIT USA MMFT3055VT1 148
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    onsemi MMFT3055VLT1

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    Bristol Electronics MMFT3055VLT1 904
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    Motorola Semiconductor Products MMFT3055ET1

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    Bristol Electronics MMFT3055ET1 896
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    FT3055 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FT3055 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    FT3055 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    FT3055 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    FT3055 Unknown Cross Reference Datasheet Scan PDF
    FT3055 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    FT3055 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    FT3055 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF

    FT3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    b0245a

    Abstract: b0607 PH3055T FT3055 SOLITRON B0501A MJE280H MJE2801K MJE3055K
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 2N5877 SOT7732 SOT7732 SOT7732 SOT7742 SOT7742 SOT7742 SOT7762 ~g:gg~~ 35 40 SOT7012 SOT7475 2N2811 OTL8012 SOT3226 SOT3226 SOT3226 SOT85307 SD+;5~01 45 50 55 60 65 70 SOT85507 SOT85607 SOT85607


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    PDF B0207 BOW21A B0501A OT7618 FT3055 SSP66A 2N6098 2N6099 b0245a b0607 PH3055T SOLITRON MJE280H MJE2801K MJE3055K

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


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    PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


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    PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


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    PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


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    PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


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    PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


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    PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


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    PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


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    PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T

    3055VL

    Abstract: n tmos transistor motorola t223
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M FT3055VL TMOS V SO T-223 for Surface Mount TM O S V N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.5 AMPERES 60 VOLTS RDS on = 0.140 OHM TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


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    PDF T-223 3055VL n tmos transistor motorola t223

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M FT3055V TM O S V S O T -2 2 3 fo r S u rfa c e M ount TM O S V N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.7 AMPERES 60 VOLTS R DS on = 0.130 OHM 'Iu l P ™ T M O S V is a new te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is tance a rea p rod u ct about o n e -h a lf th a t of sta n d a rd M O SFETs. This


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    PDF

    mosfet L 3055 motorola

    Abstract: FT3055E sot-223 body marking D K Q F
    Text: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount FT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed


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    PDF FT3055ET1/D OT-223 2PHX31317F-0 MMFT3055ET1/D mosfet L 3055 motorola FT3055E sot-223 body marking D K Q F

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by FT3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055VL TM OS V N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is -


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    PDF MMFT3055VL/D FT3055VL

    transistor bd 370

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M M FT3055V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V™ S O T -223 for Surface Mount M M FT3055V TM OS V N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


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    PDF FT3055V/D FT3055V MMFT3055V/D transistor bd 370

    2N3055 TO-220

    Abstract: mj2955 TO-220 ft3055 SE9302 2N3055 TO220 2N3055 mj2955 TO-3 FT359 SE9305 TO-3 MJ2501
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY Icmax, POLARITY AND ASCENDING V q e O (Cont’d) DEVICE NO. Polarity NPN I PNP Item •c = 10.0 A Max Continuous 1 SE9304* SE9404* hFE @ ic v CEO V A Max Min/Max *T MHz Min(Typ) PD(Max) W T C=25°C Package


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    PDF SE9304* SE9404* SE9301* SE9401* O-220 2N6385* 1K/20K MJ2501 MJ3001 SE9302* 2N3055 TO-220 mj2955 TO-220 ft3055 SE9302 2N3055 TO220 2N3055 mj2955 TO-3 FT359 SE9305 TO-3

    MJE3055F

    Abstract: SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440 2N5683 2N5684 2N5685
    Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS BY lC max, POLARITY AND ASCENDING VCEO Item DEVICE NO. Polarity NPN PNP ic = 50.0 A Max v CEO V Max VCE(sat) @ ic V A Max hpE @ 'C A Min/Max (Cont d) it PD(Max) MHz Min(Typ) Tc= 25°C Package No. Continuous (Cont'd)


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    PDF 2N5685 2N5683 2N5686 2N5684 2N3440 2N6387* 1K/20K O-220 MJE30S5F MJE3055F SE9300 FT3055 2N3715 FAIRCHILD FT50 SE9303 2N3440

    FT3055LE

    Abstract: No abstract text available
    Text: FT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET July 1998 Features Description • 2.0A, 60V This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses fea­ ture sizes approaching those of LSI circuits, gives optimum


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    PDF RFT3055LE 0-150i2 OT-223 330mm FT3055LE

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC33348/D MOTOROLA M C 33348 Lithium B attery Protection Circuit for One Cell B attery Packs The MC33348 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable


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    PDF MC33348/D MC33348