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    2N5302 Price and Stock

    Microchip Technology Inc 2N5302

    NPN TRANSISTOR
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    onsemi 2N5302G

    TRANS NPN 60V 30A TO204
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    Rochester Electronics LLC 2N5302G

    TRANS NPN 60V 30A TO204
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    Microchip Technology Inc JAN2N5302

    TRANS NPN 60V 30A TO3
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    NAC JAN2N5302 Tray 2
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    Microchip Technology Inc JANTX2N5302

    TRANS NPN 60V 30A TO3
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    NAC JANTX2N5302 Tray 2
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    2N5302 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5302 Microsemi NPN Transistor Original PDF
    2N5302 Motorola 30A NPN SILICON POWER TRANSISTOR 60V 200W Original PDF
    2N5302 On Semiconductor High-Power NPN Silicon Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5302 On Semiconductor High-Power NPN Silicon Transistor Original PDF
    2N5302 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5302 Wing Shing Computer Components NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Original PDF
    2N5302 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5302 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5302 Diode Transistor Transistor Short Form Data Scan PDF
    2N5302 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
    2N5302 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5302 General Diode Transistor Selection Guide Scan PDF
    2N5302 General Electric High current, high power, high speed N-P-N power transistor. 60V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5302 General Transistor Power Transistor Selection Guide Scan PDF
    2N5302 Mospec POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200 Scan PDF
    2N5302 Mospec NPN Silicon High-Power Transistor Scan PDF
    2N5302 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5302 Motorola The European Selection Data Book 1976 Scan PDF
    2N5302 Motorola European Master Selection Guide 1986 Scan PDF
    2N5302 Motorola Power Transistor Selection Guide Scan PDF

    2N5302 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5301

    Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745
    Text: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS


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    PDF 2N5301/D* 2N5301/D 2N5301 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745

    2N5302

    Abstract: 2N5302 JANTXV
    Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5302 O204AA) 31-Jul-02 2N5302 2N5302 JANTXV

    2N5302

    Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original
    PDF MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV

    Untitled

    Abstract: No abstract text available
    Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5302 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ


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    PDF 2N5302 2N5302/D

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original
    PDF MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302;

    2N5301

    Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745
    Text: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS


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    PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5301 2N5302 2n5302 transistor 2N4398 2N5303 2N5745

    2N5302

    Abstract: 2N5303 jantx 2n5302 adc ic 1000C
    Text: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage


    Original
    PDF 2N5302 2N5303 MIL-PRF-19500/456 2N5302 2N5303 1000C O-204-AA) 2N5302; jantx 2n5302 adc ic

    2N5301

    Abstract: 2N5302 2N5303 2n53
    Text: SavantIC Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N4398/4399/5745 ·Low collector/saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching


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    PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5301 2N5302 2N5303 2n53

    Untitled

    Abstract: No abstract text available
    Text: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5302 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5302+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N5302

    2N5301

    Abstract: 2N5303 2N5302 53-02V 2N5302 data sheet 2N5302 inchange
    Text: Inchange Semiconductor Product Specification 2N5301 2N5302 2N5303 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N4398/4399/5745 ・Low collector/saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching


    Original
    PDF 2N5301 2N5302 2N5303 2N4398/4399/5745 2N5302 2N5301 2N5303 53-02V 2N5302 data sheet 2N5302 inchange

    2n5302 transistor

    Abstract: 2N5302 2N5302G MS5302
    Text: 2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original
    PDF 2N5302 2N5302/D 2n5302 transistor 2N5302 2N5302G MS5302

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc


    Original
    PDF 2N5302

    TIP 110 transistor

    Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055
    Text: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature


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    PDF 2N5301, 2N5302, 2N5303 2N5302 2N4398, 2N4399 2N5302) 2N5303) TIP 110 transistor TIP 22 transistor TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055

    Untitled

    Abstract: No abstract text available
    Text: ÏÏÏ 3875081 G E SOLID D!T“| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ | ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


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    PDF 0G173fii( 2N5301, 2N5302, 2N5303 TQ-204AA RCA-2N5301, 2N5302 2N5303 2N53Q2, 2NS303.

    2N39024

    Abstract: jantx 2n5302
    Text: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716*' 80 10 2N39024* 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60


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    PDF 2N3715* 2N3716* 2N39024* 2N5302' 2N5303* 2N5685* 2N5686* 2N6249* 2N6250* 2N6251* 2N39024 jantx 2n5302

    2N5302

    Abstract: 2N5303 2N4398 2N4399 2N5301 2N5745 N5303
    Text: ÆàMOS PEC NPN SILICON HIGH-POWER TRANSISTORS NPN General Purpose use in power amplifier and switching circuit applications. 2N5301 2N5302 2N5303 FEATURES: * DC Current Gain Specified- 1.0 to 30 A * Low Collector-Emitter Saturation Voltage v CE<sat = °-75 v M ax) @ lc = 10 A - 2N5301, 2N5302


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    PDF 2N5301, 2N5302 2N5303, 2N4398 2N4399 2N5745 2N5301 2N5303 2N5745 N5303

    2N5301

    Abstract: 2N5302 2N5303 RCA-2N5301
    Text: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power


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    PDF 2N5301, 2N5302, 2N5303 RCA-2N5301, 2N5302 2NB301, 2NS303. 2N5301 RCA-2N5301

    2N4398

    Abstract: 2n4399 4398m
    Text: TYPES 2N4398, 2N4399 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS CD H F O R P O W ER -A M P LIFIER AND HIGH -SPEED -SW ITCHING A P P LIC A T IO N S D ES IG N ED FO R C O M P LE M EN T A R Y USE WITH 2N5301, 2N5302 c < r "D r m m H to • 200 Watts at 25° C Case Temperature


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    PDF 2N4398, 2N4399 2N5301, 2N5302 2N4398 4398m

    2n5253

    Abstract: 2N5596 2N5321 2N5357 2N5498 lta 301 2N5152S 2N5153 2N5153S 2N5154
    Text: 4ÖE » • 0133107 □□□ □ M3e! Ö3Ö ■ S M L B SEMELABESEHELAB LTD T g r - of BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2N5253 2N5301 2N5302 2N5303 2N5320 2N5321


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    PDF OGOG43e! 2N5152S 2N5153 2N5153S 2N5154 2N5154S 2N5239 2N5240 2N5241 2N5252 2n5253 2N5596 2N5321 2N5357 2N5498 lta 301

    fu 5303

    Abstract: 4410b
    Text: File Num ber 2N5301, 2N5302, 2N5303 1029 High-Current High-Power High-Speed N-P-N Power T ransistors TERMINAL DESIGNATIONS Feature«: • Specification tor h rE and VcE sat up to 30 A ■ Current gain-bandwidth pro d u ct h = 2 MHz min. at 1 A ■ Low saturation voltage with high beta


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    PDF 2N5301, 2N5302, 2N5303 O-204AA 2N5302 2N5303 fu 5303 4410b

    Untitled

    Abstract: No abstract text available
    Text: File Number 1029 HARRIS SEMICOND SECTOR 2N5301, 2N5302, 2N5303 SbE ]> High-Current High-Power High-Speed N-P-N Power Transistors • 43D2271 GGHOiiS^ 387 H H A S _ TERMINAL DESIGNATIONS F e a tu m : ■ Specification to r /ife and VcE saf up to 30 A ■ Current gain-bandw idth product h = 2 MHz min. a t 1 A


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    PDF 2N5301, 2N5302, 2N5303 43D2271 O-204AA 2N5302 2N5303

    2N5303

    Abstract: 2n5302 2N530I 2N5302 EB 2N5301
    Text: 2N5301 2N5302 2N5303 HIGH-POWER NPN SILICON TRANSISTORS 20 a n d 30 A M P E R E PO W ER TRANSISTORS NPN SILICON 40-60-80 VOLTS 200 WATTS .FO R U SE IN P O W E R A M P L IF IE R AND SW ITCH IN G C IR C U IT S A PPLIC A TIO N S. H i g h C o l l e c t o r - E m i t t e r S u s t a in in g V o l t a g e ' C E O S U S


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    PDF 2N5301 2N5302 2N5303 2N5303) 2N5301, 2N5302) 2N4398, 2N4399 2N5303 2N530I 2N5302 EB