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Microchip Technology Inc 2N3750 POWER BJT
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DigiKey	2N3750	Bulk			100	1 - 10 - 100 $237.211 1000 $237.211 10000 $237.211	Buy Now
Mouser Electronics	2N3750					1 - 10 - 100 $255.46 1000 $255.46 10000 $255.46	Get Quote
Future Electronics	2N3750				100	1 - 10 - 100 $253.44 1000 $253.44 10000 $253.44	Buy Now
Microchip Technology Inc	2N3750			36 Weeks		1 $255.46 10 $255.46 100 $255.46 1000 $255.46 10000 $255.46	Buy Now
Onlinecomponents.com	2N3750					1 - 10 - 100 $231.27 1000 $231.27 10000 $231.27	Buy Now

Avnet Americas	2N3750	Bulk		36 Weeks	100	1 $250.35081 10 $250.35081 100 $225.48825 1000 $230.7994 10000 $230.7994	Buy Now
Master Electronics	2N3750					1 - 10 - 100 $231.27 1000 $231.27 10000 $231.27	Buy Now
Mitsubishi Chemical Advanced Materials 16091292N375050000 Rod; Ø: 375mm; L: 500mm; natural; cast; Length tolerance: 0; +1mm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	16091292N375050000				1	1 $787.66 10 $741.33 100 $694.99 1000 $694.99 10000 $694.99	Get Quote
Motorola Semiconductor Products 2N3750 IN STOCK SHIP TODAY
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Component Electronics, Inc	2N3750		2			1 $7.69 10 $7.69 100 $5.77 1000 $5 10000 $5	Buy Now

2N3750 Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3750	API Electronics	5 Amp NPN Transistors	Scan	PDF
2N3750	API Electronics	Short form transistor data	Short Form	PDF
2N3750	API Electronics	Short form transistor data	Short Form	PDF
2N3750	Diode Transistor	NPN TO-111 / TO-59 Transistors	Scan	PDF
2N3750	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N3750	General Diode	Transistor Selection Guide	Scan	PDF
2N3750	General Semiconductor	Low Frequency Transistors	Scan	PDF
2N3750	General Transistor	NPN Power Transistors	Scan	PDF
2N3750	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3750	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N3750	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N3750	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N3750	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N3750	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF

2N3750	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N3750	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N3750	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N3750	New England Semiconductor	NPN TO-61 / TO-111 Transistor	Scan	PDF
2N3750	New England Semiconductor	NPN Transistors, TO-61 / TO-111	Scan	PDF
2N3750	Pirgo Electronics	Silicon Planar Power Transistors	Scan	PDF

2N3750 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SDT85502 Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879 Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913	Original	PDF	2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
2N3186 Abstract: No abstract text available Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE\| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1	Original	PDF	A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N3186
T100C Abstract: No abstract text available Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE\| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1	Original	PDF	A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 T100C
2N2891 Abstract: No abstract text available Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE\| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1	Original	PDF	A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891
solitron transistors Abstract: SOLITRON DEVICES Text: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F\|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752	OCR Scan	PDF	OaOD47t, 2N3750 2N3751 2N3752 O-111/1 2N3750 2N3751 solitron transistors SOLITRON DEVICES
2N5006 Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1	OCR Scan	PDF	0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5	OCR Scan	PDF	0-20A 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 2N6128
2N2999 Abstract: No abstract text available Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D \| Bfl4fl3S5 D D Q O I S ? 00127 D -7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple VCEOfSUS)	OCR Scan	PDF	O-111/TO-59 0to10A 2n2892 2n2893 2n3859 n3748 2n3749 2n3750 2n3751 2n3752 2N2999
2N5075 Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C	OCR Scan	PDF	b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
2N2999 Abstract: 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853 Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D \| Bfl4fl3S5 D D Q O I S ? 00127 D-7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple VCEOfSUS)	OCR Scan	PDF	O-111/TO-59 0to10A 2n2892 2N2893 2N3859 2N3748 2N3749 2N3750 2N3751 2N3752 2N2999 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853
2n3749 Abstract: 2N3744 2N3751 2N3747 2N3750 2N3748 2N3752 Pirgo Electronics 2N3759 Text: #"-: A P I ELECTRONICS INC ^3 \|p a ? % D E \| G D 4 3 S c]a □DD0Q44 1 r-3 3 ^ THRU 2N3752 POWER TRANSISTORS ENGINEERING BULLETIN pgggg"r ,".r.^!.lM^'"7 'T tV ^ y « ^ 2N 3744^ TYPE 2N3744 THRU 2N3752, 5 MâP NPN SILICON PLANAR POWER TRANSISTORS SEATING P L A N E -	OCR Scan	PDF	2N3744 2N3752 2M3744 2N3752, COLLN3752 2N3746 2N3749 2N3752 2N3749 2N3751 2N3747 2N3750 2N3748 Pirgo Electronics 2N3759
2n2301 Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815 Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö \| 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74	OCR Scan	PDF	2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
cs9011j Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C Text: CRIMSON SEMICONDUCTOR INC TT DE \| 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah \|V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •	OCR Scan	PDF	2N1507 2N1566 2NI613 2N1889 2N1890 2N1893 2N1973 2N1974 2NI975 O-237 cs9011j MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	PDF	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

2N5286 Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 Text: SOLITRON DEVICES INC ^ D eT\| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT	OCR Scan	PDF	2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
2N3016 Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017 Text: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418	OCR Scan	PDF	2N2891 2N2892 O-111 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3419 TO61 package
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
2N4116 Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)	OCR Scan	PDF	0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 2N5284 2N5285 2N5346 2N5347 2N4116 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
2N3016 Abstract: 2N3419 Text: A P I ELECTRONICS INC 0043592 A P I ELECTRONICS 5b INC » F \| d D 43Sc15 DDD025E D °*T"-33-0l 26C 0 0 2 2 2 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N2891 2N2892 TO -5 TO 111 TO 111 TO -5 T O -5 TO -5 TO -5 T O -5 STUD TO 61/1 TO -3	OCR Scan	PDF	DDD025E -33-0l 2N3016 2N3419
Untitled Abstract: No abstract text available Text: i im m u m ' * i I ELECTRONICS INC ^ '.Mv^ M S 0043592 S A P I p pwwpw I f * , •■ w 0D43SC ]E DDDDD1D tbi g\|?' .- .o <Lr ;\ .;L L * u u u u u j j u ELECTRONICS ’StTPS'to .^-^*1 INC ^ s-i-=a 93A0010 T-3 3 -0 1 — “sS' T “ — l 5 AM P 'it r 4 1I,5“1-" ^	OCR Scan	PDF	0D43SC 93A0010 O-111 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749
Untitled Abstract: No abstract text available Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘	OCR Scan	PDF	O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111
2N3622 Abstract: 2N3598 2N3599 2N3619 2N3620 2N3621 2N3623 2N3627 2N3628 2N3629 Text: • NPN D E V IC E PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRI E A K D O V V N V O LT A G E S SAT . V O L T A G ES M<3 X . h F:E 'c (V) 'c (A) Mm Max. (A) 'b (A) V CE (V) V BE (V) V CE CASE V CB VCE V EB 2N3598 TO-63 80 60 8 *■» t. 10 40 120	OCR Scan	PDF	2N3598 2N3599 2N3619 2N3620 2N3621 2N3622 2N3623 2N3627 2N3628 2N3629
2n3223 Abstract: 2N3543 2N3222 2N2632 2k4075 Text: 81 3 4 6 9 3 S E M I C O A 40 D E \| fll34bT3 □ □ □ D I E S 1 1 ^ 2 7 - 0 / NPN SILICON POWER TRANSISTORS Electrical Characteristics @ 25°C Maximum Ratings Device Type No. NPN Dissipation @ 25°C Case Watts (Cont.) Amps VCB Volts VCE Volts 2N3595 2N3596	OCR Scan	PDF	2n3595 2n3596 2n5662 2n5660 2n3917 to-66 2n3918 2n3222 2n3223 2n2890 2N3543 2N2632 2k4075
2N3016 Abstract: TO61 package TO111 package 2N3419 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 Text: _10 a u l i i E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No Case 2N2891 2N2892 TO-5 TO111 TO- 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418 2N3419 JAN 2N3419 JTX 2N3419 JTXV	OCR Scan	PDF	2N2891 2N2892 O-111 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 TO61 package TO111 package 2N3419

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2N3750 Search Results

2N3750 Price and Stock

Microchip Technology Inc 2N3750

Mitsubishi Chemical Advanced Materials 16091292N375050000

Motorola Semiconductor Products 2N3750

2N3750 Datasheets (28)

2N3750 Datasheets Context Search

SDT85502

2N3186

T100C

2N2891

solitron transistors

2N5006

Untitled

2N2999

2N5075

2N2999

2n3749

2n2301

cs9011j

2NS604

2N5286

2N3016

aeg diode Si 61 L

2N4116

2N3016

Untitled

Untitled

2N3622

2n3223

2N3016