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    Microchip Technology Inc 2N3747

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    2N3747 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3747 API Electronics 5 Amp NPN Transistors Scan PDF
    2N3747 API Electronics Short form transistor data Short Form PDF
    2N3747 API Electronics Short form transistor data Short Form PDF
    2N3747 Diode Transistor NPN TO-111 / TO-59 Transistors Scan PDF
    2N3747 Diode Transistor Transistor Short Form Data Scan PDF
    2N3747 General Diode Transistor Selection Guide Scan PDF
    2N3747 General Semiconductor Low Frequency Transistors Scan PDF
    2N3747 General Transistor NPN Power Transistors Scan PDF
    2N3747 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3747 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3747 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3747 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3747 Unknown Vintage Transistor Datasheets Scan PDF
    2N3747 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3747 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3747 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3747 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3747 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3747 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3747 New England Semiconductor NPN TO-61 / TO-111 Transistor Scan PDF

    2N3747 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


    Original
    PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    2N3186

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


    Original
    PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N3186

    T100C

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


    Original
    PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 T100C

    2N2891

    Abstract: No abstract text available
    Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1


    Original
    PDF A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5


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    PDF 0-20A 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957 2N6128

    2N3016

    Abstract: 13421 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1
    Text: 17 SILICON POWER TRANSISTORS CURREN T G A IN S A TURATIO N VO LTAG ES 8> TYPE NUMBER CASE TYPE V CBO V V CEO V V EBO V hFE M IN . I M A X. V CE 'c V A V CE s V BE(s) V I V *C A I *B A 5 AMP SILICON NPN 2 N2657 2N2658 2N2850-1 TO-5 TO-5 TO-5 80 100 100 60


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    PDF 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2855-1 2N2856-1 2N2877 O-111 2N3016 13421

    2N2999

    Abstract: No abstract text available
    Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D -7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)


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    PDF O-111/TO-59 0to10A 2n2892 2n2893 2n3859 n3748 2n3749 2n3750 2n3751 2n3752 2N2999

    2N5075

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C


    OCR Scan
    PDF b80-100V 2N5006 2N5008 2N5288 2N5284 2N5285 2N5346 2N5347 2N5348 2N5349 2N5075 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    2N2999

    Abstract: 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853
    Text: r\ NPN TO-11t/TO-59 DIODL IKANSISTOR CO ñ4D INC 84D D | Bfl4fl3S5 D D Q O I S ? 00127 D-7 ~ ^ T j ^ 6 7 • s ra n ia is T Q R ra.ir\ic. 201 6864)400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-676-5863 PNP C om ple­ VCEOfSUS)


    OCR Scan
    PDF O-111/TO-59 0to10A 2n2892 2N2893 2N3859 2N3748 2N3749 2N3750 2N3751 2N3752 2N2999 2N5478 2N5479 2N2877 2N2878 2N2879 2N2893 2N3851 2N3852 2N3853

    2n3749

    Abstract: 2N3744 2N3751 2N3747 2N3750 2N3748 2N3752 Pirgo Electronics 2N3759
    Text: #*"*-: A P I ELECTRONICS INC ^3 |p a ? % D E | G D 4 3 S c]a □DD0Q44 1 r-3 3 ^ THRU 2N3752 POWER TRANSISTORS ENGINEERING BULLETIN pgggg"*r ,".r.^!.lM^'*"7 'T tV ^ y « ^ 2N 3744^ TYPE 2N3744 THRU 2N3752, 5 MâP NPN SILICON PLANAR POWER TRANSISTORS SEATING P L A N E -


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    PDF 2N3744 2N3752 2M3744 2N3752, COLLN3752 2N3746 2N3749 2N3752 2N3749 2N3751 2N3747 2N3750 2N3748 Pirgo Electronics 2N3759

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


    OCR Scan
    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


    OCR Scan
    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


    OCR Scan
    PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    2N3016

    Abstract: 2N3419 TO61 package 2N2891 2N2892 2N2893 2N2984 2N2985 2N2986 2N3017
    Text: _10 a u l i i E LE C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES—Continued Case 2N2891 2N2892 TO-5 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO-5 STUD TO61/1 TO-5 TO-5 2N2984 2N2985 2N2986 2N3016 2N3017 2N3018 2N3418 JAN 2N3418 JTX 2N3418 JTXV 2N3418


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    PDF 2N2891 2N2892 O-111 2N2893 2N2984 2N2985 2N2986 2N3016 2N3017 2N3419 TO61 package

    2N4116

    Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
    Text: NEW E N G L A N D S E M I C O N D U C T O R STE D • b5b4^3 OOODOSfi DAT * N E S 3 VCEO SUS (V) 1C (MAX) W - / NPN TO-61 = 10-20A VcEO(SUS) = 8 0-1 00V fT = 10-50 MHz lc (M A X ) Type No. 3 ISOLATED COLLECTOR Case 8 0 6 tlFE 0 IC/VCE (mln-max @ A/V) VCE (SAT)


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N5289 2N5284 2N5285 2N5346 2N5347 2N4116 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957

    2N3016

    Abstract: 2N3419
    Text: A P I ELECTRONICS INC 0043592 A P I ELECTRONICS 5b INC » F | d D 43Sc15 DDD025E D °*T"-33-0l 26C 0 0 2 2 2 COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No C ase 2N2891 2N2892 TO -5 TO 111 TO 111 TO -5 T O -5 TO -5 TO -5 T O -5 STUD TO 61/1 TO -3


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    PDF DDD025E -33-0l 2N3016 2N3419

    Untitled

    Abstract: No abstract text available
    Text: i im m u m ' * i I ELECTRONICS INC ^ '.Mv^ M S 0043592 S A P I p pwwpw I f * , •■ w 0D43SC ]E DDDDD1D tbi g|?' .- .o <Lr ;\ .;L L * u u u u u j j u ELECTRONICS ’StTPS'to .^-^*1 INC ^ s-i-=a 93A0010 T-3 3 -0 1 — “sS' T “ — l 5 AM P 'it r 4 1I,5“1-" ^


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    PDF 0D43SC 93A0010 O-111 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749

    2N3016

    Abstract: SDT5052 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720
    Text: 11 SILICON POWER TRANSISTORS CURREIS T G A IN SATURATIO N J V O LT A G E S 3 TYPE NUM BER CASE TYPE V CBO V Yceo v V EBO V h FE M IN . I M A X . v V CE s) V BE(s> V I V A 'c A I *B A 2 AMP SILICON NPN 2N1252 2N1253 2N 1506 TO-5 TO-5 TO-5 30 30 60 20 20 40


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 MT-13 2N1720 2N3016 SDT5052

    Untitled

    Abstract: No abstract text available
    Text: Z CL CL CL CL C L Z Z Z Z Z CL CL CL CL CL CL CL CL CL Z Z Z Z Z Q- CL CL CL CL z zzzz Q- CL CL CL CL 2N4910 2N4911 2N4912 2N4913 2N4914 CL CL CL CL CL Z Z Z Z Z CL CL CL CL CL Z Z Z Z Z zzzzz CL CL CL CL CL Z Z Z Z Z zzzzz o o o o o c l cl o dd z zz z ‘


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    PDF O-39/TO-5 2N4910 2N4911 2N4912 2N4913 2N4914 O-114 O-111

    2N3622

    Abstract: 2N3598 2N3599 2N3619 2N3620 2N3621 2N3623 2N3627 2N3628 2N3629
    Text: • NPN D E V IC E PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRI E A K D O V V N V O LT A G E S SAT . V O L T A G ES M<3 X . h F:E 'c (V) 'c (A) Mm Max. (A) 'b (A) V CE (V) V BE (V) V CE CASE V CB VCE V EB 2N3598 TO-63 80 60 8 *■» t. 10 40 120


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    PDF 2N3598 2N3599 2N3619 2N3620 2N3621 2N3622 2N3623 2N3627 2N3628 2N3629

    2n3223

    Abstract: 2N3543 2N3222 2N2632 2k4075
    Text: 81 3 4 6 9 3 S E M I C O A 40 D E | fll34bT3 □ □ □ D I E S 1 1 ^ 2 7 - 0 / NPN SILICON POWER TRANSISTORS Electrical Characteristics @ 25°C Maximum Ratings Device Type No. NPN Dissipation @ 25°C Case Watts (Cont.) Amps VCB Volts VCE Volts 2N3595 2N3596


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    PDF 2n3595 2n3596 2n5662 2n5660 2n3917 to-66 2n3918 2n3222 2n3223 2n2890 2N3543 2N2632 2k4075

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    PDF 2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444