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    TDK Electronics B32522N3105K189

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    TDK Electronics B32522N3105K000

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    TDK Electronics B32522N3105J000

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    IDEC Corporation ASD3L22N-310

    SWITCH SELECTOR
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    IDEC Corporation ASD3122N-310

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    2N310 Datasheets (154)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N310 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N310 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N310 Unknown GE Transistor Specifications Scan PDF
    2N310 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N310 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N310 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N310 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N310 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N310 Unknown Vintage Transistor Datasheets Scan PDF
    2N3100 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3100 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N3100 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3100 Semitronics 700V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier Scan PDF
    2N3100 Semitronics Thyristors and Triggers / Silicon Controlled Rectifiers Scan PDF
    2N3101 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3101 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N3101 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N3101 Semitronics 800V V[drm] Max., 70A I[T] Max. Silicon Controlled Rectifier Scan PDF
    2N3101 Semitronics Thyristors and Triggers / Silicon Controlled Rectifiers Scan PDF
    2N3102 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    ...

    2N310 Datasheets Context Search

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    2N3109

    Abstract: No abstract text available
    Text: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3109 O205AD) 1-Aug-02 2N3109

    2N3108

    Abstract: No abstract text available
    Text: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3108 O205AD) 1-Aug-02 2N3108

    Untitled

    Abstract: No abstract text available
    Text: ,U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 2N3108-2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.


    Original
    PDF NPN2N3108-2N3110 2N3108 2N3110 2N3108 2N3110 20MHz

    2N3107

    Abstract: No abstract text available
    Text: 2N3107 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3107 O205AD) 10/1m 1-Aug-02 2N3107

    Untitled

    Abstract: No abstract text available
    Text: 2N3107 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3107 O205AD) 10/1m 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3108 NPN small signal general purpose amplifier & satureted switch. . 1 of 1 Home Part Number: 2N3108 Online Store 2N3108 Diodes NPN s m all s ignal general purpo s e am plifier & s at uret ed s w it c h.


    Original
    PDF 2N3108 com/2n3108 2N3108

    2N601

    Abstract: TA761 asy26 2n6365 AC188K Low-Power Germanium PNP 2N3371 2N3280 2N369 MXO55GA-4C-20.25M
    Text: LOW-POWER GERMANIUM PNP Item Number Part Number 10 15 20 25 30 35 40 2S8186 2Nl129 TA81 TA81 TA81 2S8486 MA1705 MA1705 AC188K AC188K AC188K 2N3371 ACl15 AC154 AC156 ACl13 ASY82 ASY83 TI384 UPI404 2N310 2N215 2N369 2N499 TA761 TA761 TA761 2N2095 2N2964 2N2965


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    PDF 2S8186 2Nl129 2S8486 MA1705 AC188K 2N3371 ACl15 2N601 TA761 asy26 2n6365 Low-Power Germanium PNP 2N3280 2N369 MXO55GA-4C-20.25M

    2N3108

    Abstract: No abstract text available
    Text: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3108 O205AD) 17-Jul-02 2N3108

    Untitled

    Abstract: No abstract text available
    Text: 2N3107 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3107 O205AD) 10/1m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3109 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3109 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3109 O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3108 O205AD) 19-Jun-02

    2N4033

    Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
    Text: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107


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    PDF 2N3073 2N3081 2N3107 2N4032 2N3108 2N4030 2N3109 2N4033 2N3110 2N3115 2N4033 2N3702 2N3794 2N4235

    2N5225

    Abstract: 2N4033 2N5042
    Text: Medium Power Amplifiers and Switches H,re COMPLE­ C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150


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    PDF 2N3794 2N3945 2N4029 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4234 2N5225 2N5042

    2N3108

    Abstract: 2N3107 2N3109 2N3110
    Text: 2N3107 2N 3108 S SILICON PLANAR NPN G E N E R A L P U RPO SE A M P L I F I E R S A N D S W IT C H E S The 2N 3107, 2N 3108, 2N 3109 and 2N 3110 are silicon planar epitaxial NPIM transistors in Jedec T O -3 9 metal case p rim a rily intended fo r large signal, low noise industrial ap­


    OCR Scan
    PDF 2N3107 2N3107 2N3108 150mA 2N3108 2N3109 2N3110

    pic 08m

    Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174


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    PDF 2N3053SM 2N3054 2N3055 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E pic 08m 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411

    Untitled

    Abstract: No abstract text available
    Text: 2N3107 z * ’“ - th ro u g h 2N3110 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ¥ X ''«SS« »W v. I CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS


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    PDF 2N3107 2N3110 2N3107 2N3110 2N4032, 2N4030. 2N3109 800mW 150mA

    2N5107

    Abstract: 2N3109 2N3107 2N3108 2N3110 IN3600 2N4030 2N4032
    Text: 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES I :r's : < yy ji - . v; >> r CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS


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    PDF 2N3107 2N3110 2N4032, 2N4030. 2N3109 800mW 2N5107 2N3108 IN3600 2N4030 2N4032

    2N3406

    Abstract: 2N3055 plastic pic 08m 2N3055-6 2N305A 2N3055 2N3444 2N3680 2N3172 2N3055-7
    Text: Ô1331Ô7 4ÔE D DDDDM3S SEMELABI 112 ISfILB SEMELAB L T » r * 2 . ? . ö / BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N3036 2N3053 2N3053L 2N305A 2N3055 2N3055/5 2N3055/6 2N3Q55/7 2N3055E 2N3055H 2N3109 2N3110 2N311A 2N3167 2N3168 2N3169


    OCR Scan
    PDF 2N3036 10/10m 2N3053 2N3053L 2N305A 2N3055 20rain 2N3055/5 2N3055/6 2N3055/7 2N3406 2N3055 plastic pic 08m 2N3055-6 2N3444 2N3680 2N3172 2N3055-7

    4066 Handbook

    Abstract: 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101
    Text: K1L-S-19500/280A EC 6 .Tannery 197» SUPERSEDING HTL-S-19500/280(NAVY) 2 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTOR (CONTROLLED RECTIFIER). SILICON TYPES 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 2N3105, AND 2N3106


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    PDF K1L-S-19500/280A MTL-S-19500/280 2N3091, 2N3093, 2N3095, 2N3097, 2N3098, 2N3099, 2N3101, 2N3103, 4066 Handbook 2N3103 2n3033 2N3091 2N3093 2N3095 2N3097 2N3098 2N3099 2N3101

    2N3107

    Abstract: 2N3108 2N3109 2N3110 2N4030 2N4032 2n31
    Text: f 2N3107 th ro u g h 2N3110 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES CASE TO-39 THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP


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    PDF 2N3107 2N3110 2N3110 2N4032, 2N4030. 2F3109 800mV CONDITI3108, 2N3108 2N3109 2N4030 2N4032 2n31

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N310B

    Abstract: 2N2270
    Text: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*


    OCR Scan
    PDF 2N718A 2N720A 2N915 2N916 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N310B 2N2270

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224