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    2N342 Price and Stock

    Microchip Technology Inc JANTX2N3421

    TRANS NPN 80V 3A TO5
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    DigiKey JANTX2N3421 Bulk 104 1
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    Microchip Technology Inc 2N3421

    TRANS NPN 80V 3A TO5
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    Microchip Technology Inc 2N3421P

    POWER BJT
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    NAC 2N3421P 10
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    Microchip Technology Inc 2N3421S

    TRANS NPN 80V 3A TO39
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    DigiKey 2N3421S Bulk 100
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    Microchip Technology Inc 2N3421S 22 Weeks
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    Onlinecomponents.com 2N3421S
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    NAC 2N3421S 18
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    Microchip Technology Inc JAN2N3421

    TRANS NPN 80V 3A TO5
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    DigiKey JAN2N3421 Bulk 100
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    Microchip Technology Inc JAN2N3421 512 22 Weeks
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    NAC JAN2N3421 19
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    Find more 2N342 price and stock on Findchips.com

    2N342 Datasheets (271)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N342 Advanced Semiconductor Silicon Transistor Scan PDF
    2N342 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N342 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N342 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N342 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N342 Unknown Vintage Transistor Datasheets Scan PDF
    2N342 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N342 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N342 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N342 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N342 Unknown GE Transistor Specifications Scan PDF
    2N342 Unknown Transistor Replacements Scan PDF
    2N342 Semitronics Silicon Power Transistors Scan PDF
    2N3420 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=3 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 Original PDF
    2N3420 Microsemi 3 Amp, 85V, NPN Silicon Power Transistors - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=3 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 Original PDF
    2N3420 Microsemi NPN Medium Power Silicon Transistor Original PDF
    2N3420 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=60 / Ic=3 / Hfe=40-120 / fT(Hz)=40M / Pwr(W)=0.8 Original PDF
    2N3420 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3420 API Electronics 5 Amp NPN Transistors Scan PDF
    2N3420 API Electronics Short form transistor data Short Form PDF
    ...

    2N342 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3421

    Abstract: 2N3419 2N3420 1000C 2N3418 2N3418S 2N3419S 2N3420S
    Text: TECHNICAL DATA 2N3418, S, JAN, TX, TXV 2N3419, S, JAN, TX, TXV 2N3420, S, JAN, TX, TXV 2N3421, S, JAN, TX, TXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/393 NPN SILICON MEDIUM-POWER TRANSISTOR 2N3418, 2N3419, 2N3420, 2N3421 TO- 5 MAXIMUM RATINGS Ratings


    Original     		PDF 2N3418, 2N3419, 2N3420, 2N3421, MIL-PRF-19500/393 2N3421 1000C 2N3421 2N3419 2N3420 2N3418 2N3418S 2N3419S 2N3420S

    2N3421

    Abstract: No abstract text available
    Text: 2N3421 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3421 O205AD) 1-Aug-02 2N3421

    2N3420AL

    Abstract: No abstract text available
    Text: 2N3420AL Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3420AL O205AA) 20-Aug-02 2N3420AL

    2N3420A

    Abstract: No abstract text available
    Text: 2N3420A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)


    Original     		PDF 2N3420A O205AD) 1-Aug-02 2N3420A

    2N3420SMD05

    Abstract: No abstract text available
    Text: 2N3420SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


    Original     		PDF 2N3420SMD05 O276AA) 15-Aug-02 2N3420SMD05

    2N3421SMD

    Abstract: No abstract text available
    Text: 2N3421SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


    Original     		PDF 2N3421SMD O276AB) 15-Aug-02 2N3421SMD

    2N3420

    Abstract: No abstract text available
    Text: 2N3420 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3420 O205AD) 1-Aug-02 2N3420

    2N5251

    Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
    Text: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX


    Original     		PDF 2N2880 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N3740 2N3741 2N3749 2N5251 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421

    2N3420

    Abstract: No abstract text available
    Text: 2N3420 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N3420 O205AD) 17-Jul-02 2N3420

    Untitled

    Abstract: No abstract text available
    Text: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N3421A O205AD) 17-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3418U4 thru 2N3421U4 Available on commercial versions Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The


    Original     		PDF 2N3418U4 2N3421U4 MIL-PRF-19500/393 LDS-0192-2,

    Untitled

    Abstract: No abstract text available
    Text: SILICON PLANAR NPN TRANSISTOR 2N3421 • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


    Original     		PDF 2N3421 Ju0396 O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: 2N3429 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition)1.5 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0


    Original     		PDF 2N3429 Freq20k

    Untitled

    Abstract: No abstract text available
    Text: 2N3421+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)125 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200# I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0


    Original     		PDF 2N3421 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: 2N342+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)60m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)7.0 @I(C) (A) (Test Condition)20m


    Original     		PDF 2N342

    2N3421ASMD05

    Abstract: No abstract text available
    Text: 2N3421ASMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


    Original     		PDF 2N3421ASMD05 O276AA) 15-Aug-02 2N3421ASMD05

    2N3421A

    Abstract: No abstract text available
    Text: 2N3421A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF 2N3421A O205AD) 1-Aug-02 2N3421A

    2N3419

    Abstract: 2N3420 2N3418
    Text: NPN Meduim Power Silicon Transistor 2N3418, 2N3419, 2N3420 & 2N3421 2N3418S, 2N3419S, 2N3420S & 2N3421S Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/393 • TO-5, TO-39 (TO-205AD) Package Maximum Ratings


    Original     		PDF 2N3418, 2N3419, 2N3420 2N3421 2N3418S, 2N3419S, 2N3420S 2N3421S MIL-PRF-19500/393 O-205AD) 2N3419 2N3420 2N3418

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan     		PDF O-111 O-5/39 O-114 2N5415

    BU606D

    Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
    Text: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440


    OCR Scan     		PDF BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 BU606D BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650

    2N5415

    Abstract: No abstract text available
    Text: C R I M S O N S E M I C O N D U C T O R INC D e | SSm CHti 00Q033L Ti 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 3 6 INC D T'33 ' J EPITAXIAL PLANAR - TO-39 PN P NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421


    OCR Scan     		PDF 00Q033L BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S 2N5415

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    TRANSISTOR SE 135

    Abstract: 11C1 diode p 2N3421
    Text: General Semiconductor Industries, Inc. ' f e "11" Typical Device Types: 2N3418 - 2N3421, 2N4150 | DIODE & TRANSISTOR CHIPS nnAi u ui ItPfJ NPN T R A N S IS T O R C H IP 10 AMP Fast Switching Bonding Pad Areas Base 1 31 x 13.5 mils Front Metallization: Aluminum


    OCR Scan     		PDF 2N3418 2N3421, 2N4150 11C-1 11C-2 100mA, 200mA 2N3421 TRANSISTOR SE 135 11C1 diode p

    2N3418

    Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
    Text: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:


    OCR Scan     		PDF 2N3418, 2N3419, 2N3420, 2N3421 TIX3033, TIX3034, TIX3035, TIX3036 2N3418 2N3419 tata ak 90 2N3420 TIX3033 TNR*G TIX3034 TIX3035 TIX3036