Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 90ns
|
Original
|
M29W320DT
M29W320DB
2Mbx16,
|
PDF
|
N04C1630E3AM
Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Text: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x04 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 4Mb (256Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range
|
Original
|
N04C1630E3AM
32x04
2Mbx16)
256Kbx16)
66-Ball
048Kb
32K-word
23154-E
N04C1630E3AM
N04C1630E3AM-7BI
N04C1630E3AM-7TI
|
PDF
|
m29dw324
Abstract: No abstract text available
Text: M29DW324D Flash Memory 4Mbx8 or 2Mbx16, Boot Block, Dual Bank Flash Memory Division STMicroelectronics Overview PRODUCT MARKET SEGMENT 32 Mbit Organization: 4Mb x8 or 2Mb x16 – Consumer and Telecom applications Dual Bank, Boot Block 3V Power Supply Flash Device
|
Original
|
M29DW324D
2Mbx16,
ptfl0313
M29DW324D*
M29DW324DB
M29DW324DB70N6
M29DW324DB70N6E
M29DW324DB70ZA6
M29DW324DB70ZE6E
M29DW324DT
m29dw324
|
PDF
|
M29W320
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns
|
Original
|
M29W320ET
M29W320EB
2Mbx16,
M29W320
|
PDF
|
M29W320DT
Abstract: Numonyx JESD97 M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns
|
Original
|
M29W320DT
M29W320DB
2Mbx16,
M29W320DT
Numonyx
JESD97
M29W320D
M29W320DB
TFBGA48
|
PDF
|
N08C1630E3AM
Abstract: N08C1630E3AM-7BI N08C1630E3AM-7TI 32x08
Text: N08C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Preliminary 32x08 Combination Memory Multi-Chip Package MCP 32Mb (2Mbx16) Dual Bank Flash Memory plus 8Mb (512Kbx16) SRAM 3.0V, 70ns Access Time, 66-Ball FBGA, Industrial Temperature Range
|
Original
|
N08C1630E3AM
32x08
2Mbx16)
512Kbx16)
66-Ball
048Kb
32K-word
23155-E
N08C1630E3AM
N08C1630E3AM-7BI
N08C1630E3AM-7TI
|
PDF
|
m29w32
Abstract: JESD97 M29W320E M29W320EB M29W320ET TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■
|
Original
|
M29W320ET
M29W320EB
2Mbx16,
TSOP48
m29w32
JESD97
M29W320E
M29W320EB
M29W320ET
TFBGA48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access times: 70, 90ns Programming time
|
Original
|
M29W320ET
M29W320EB
2Mbx16,
TSOP48
TFBGA48
FBGA64
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access times: 70, 90ns Programming time
|
Original
|
M29W320ET
M29W320EB
2Mbx16,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29DW323D Flash Memory 4Mbx8 or 2Mbx16, Boot Block, Dual Bank Flash Memory Division STMicroelectronics OVERVIEW MARKET SEGMENT PRODUCT 32 Mb Flash memory Organization: 4Mb x8 or 2Mb x16, – Consumer and Telecom applications Dual Bank, Boot Block 3V Power Supply device.
|
Original
|
M29DW323D
2Mbx16,
ptfl0312
M29DW323D*
M29DW323DB
M29DW323DB70N6
M29DW323DB70N6E
M29DW323DB70N6T
M29DW323DB70ZA6E
M29DW323DB70ZE6
|
PDF
|
N08C1630E3AM-7BI
Abstract: N08C1630E3AM N08C1630E3AM-7TI
Text: N08C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information Low Voltage, Extended Temperature 32Mb FLASH and 8Mb SRAM Combo Memory 2Mbx16 bit Flash + 512Kbx16 bit SRAM OVERVIEW & FEATURES
|
Original
|
N08C1630E3AM
2Mbx16
512Kbx16
048Kb
32K-word
23155-C
N08C1630E3AM-7BI
N08C1630E3AM
N08C1630E3AM-7TI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access time: 70, 80, and 90 ns
|
Original
|
M29W320DT
M29W320DB
2Mbx16,
|
PDF
|
M29W320D
Abstract: M29W320DB M29W320DT JESD97 TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access time: 70, 90ns
|
Original
|
M29W320DT
M29W320DB
2Mbx16,
M29W320D
M29W320DB
M29W320DT
JESD97
TFBGA48
|
PDF
|
M29W320E
Abstract: M29W320EB m29w320et JESD97 TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns ■
|
Original
|
M29W320ET
M29W320EB
2Mbx16,
TSOP48
M29W320E
M29W320EB
m29w320et
JESD97
TFBGA48
|
PDF
|
|
|
FBGA64
Abstract: 3F001
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Features Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) Access times: 70, 90ns Programming time
|
Original
|
M29W320ET
M29W320EB
2Mbx16,
FBGA64
3F001
|
PDF
|
N04C1630E3AM
Abstract: N04C1630E3AM-7BI N04C1630E3AM-7TI
Text: N04C1630E3AM NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information Low Voltage, Extended Temperature 32Mb FLASH and 4Mb SRAM Combo Memory 2Mbx16 bit Flash + 256Kbx16 bit SRAM OVERVIEW & FEATURES
|
Original
|
N04C1630E3AM
2Mbx16
256Kbx16
048Kb
32K-word
23154-C
N04C1630E3AM
N04C1630E3AM-7BI
N04C1630E3AM-7TI
|
PDF
|
DDR333
Abstract: DDR400 K4H281638E-TCCC
Text: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.3 Rev. 1.3. September. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)
|
Original
|
128Mb
DDR400
200MHz
400Mbps
DDR333
K4H281638E-TCCC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FMP3217CAx CMOS LPRAM Document Title 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. 0.0 History Draft date Initial Draft Remark Oct,17th, 2007 1 Revision 0.0 Oct. 2007 FMP3217CAx CMOS LPRAM 2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
Original
|
FMP3217CAx
48-FBGA-6
FMP3217CAx-FxxX
FMP3217CAx-GxxX
FMP3217CAx-HxxX
FMP3217CA1
FMP3217CA2
25/Typ.
85/Typ.
|
PDF
|
A0-A21
Abstract: LH28F320S3HNS-L11
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F320S3HNS-L11 Flash Memory 16M 2MB x 8 / 1MB × 16 (Model No.: LHF32K03) Spec No.: EL108029A Issue Date: December 17, 1998 sharp LHF32K03 ●Handle this document carefully for it contains material protected by international copyright
|
Original
|
LH28F320S3HNS-L11
LHF32K03)
EL108029A
LHF32K03
A0-A21
LH28F320S3HNS-L11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.2 Rev. 1.2 Mar. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)
|
Original
|
128Mb
DDR400
200MHz
400Mbps
|
PDF
|
a1t 75
Abstract: 512 kbyt memory RASH 1133B intel 290000
Text: _ SHARP REFERENCE P H U U U C 'I P H t VIEW R e v 1.1 LH28F320S3-L11/14 32-MBIT 4MBx8/2MBx16 Smart 3 Flash MEMORY • Smart 3 Technofogy — 2.7V or 3.3V Vcc — 2.7V, 3.3V or 5V VPP ■ Hlgh-Density Symmetrically-Blocked Architecture — Sixty-four 64-Kbyte Erasable Blocks
|
OCR Scan
|
LH28F320S3-L11/14
32-MB
4MBx8/2MBx16)
110/140ns
56-Lead
64-Lead
110ns
130ns
140ns
a1t 75
512 kbyt memory
RASH
1133B
intel 290000
|
PDF
|
intel 290000
Abstract: No abstract text available
Text: PRELIMINARY SHARP PRODUCT PREVIEW Rev. 1.0 LH28F320SK-L90/12 32-MBIT 4MBx8/2MBx16 SmartVoltage Flash MEMORY • SmartVoltage Technology — 2.7V, 3.3V or 5V Vcc — 2.7V, 3.3V or 5V VPP ■ Common Flash Interface (CFI) Universal & Upgradable Interface ■ Scalable Command Set (SCS)
|
OCR Scan
|
LH28F320SK-L90/12
32-MBIT
4MBx8/2MBx16)
100/120ns
110/140ns
130/160ns
64-Kbyte
100pF
LH28F320SKXX-L90
LH28F320SK-L130
intel 290000
|
PDF
|
pf 4fl datasheet
Abstract: phase controller L120 intel 290000
Text: SHARP |REFERENCE ‘ PRODUCT PREVIEW Rev. 1.1 LH28F320S5-L90/12 32-MBIT 4MBx8/2MBx16 Sm art 5 Flash MEMORY • Smart 5 Technology — 5V Vcc — 5V VPP ■ High-Oensity Symmetrically-Blocked Architecture — Sixty-four 64-Kbyte Erasable Blocks ■ ■ Enhanced Data Protection Features
|
OCR Scan
|
LH28F320S5-L90/12
32-MBIT
4MBx8/2MBx16)
56-Lead
64-Lead
orx16
100ns
120ns
pf 4fl datasheet
phase controller L120
intel 290000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SHARP ]REFERENCE PRODUCT PREVIEW Rev. 1.1 LH28F320S5-L90/12 32-MBIT 4MBx8/2MBx16 Smart 5 Flash MEMORY • Smart 5 Technology — 5V Vcc — 5V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixty-four 64-Kbyte Erasable Blocks ■ Common Flash Interface (CFI)
|
OCR Scan
|
LH28F320S5-L90/12
32-MBIT
4MBx8/2MBx16)
100/120ns
64-Kbyte
100ns
120ns
56-Lead
64-Lead
|
PDF
|