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    MJ1001 Price and Stock

    Ohmite Mfg Co MJ1001FE-R52

    RES 1K OHM 1% 1/8W AXIAL
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    DigiKey MJ1001FE-R52 Reel 50,000
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    Ohmite Mfg Co MJ1001F

    Res Metal Film 1K Ohm 1% 0.125W(1/8W) ±50ppm/°C Conformal Coated AXL Ammo
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MJ1001F 730 10
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    • 10 $15.2324
    • 100 $3.1834
    • 1000 $3.1834
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    Onlinecomponents.com MJ1001F 734
    • 1 -
    • 10 $12.78
    • 100 $2.76
    • 1000 $2.76
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    Master Electronics MJ1001F 734
    • 1 -
    • 10 $12.78
    • 100 $2.76
    • 1000 $2.76
    • 10000 $2.76
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    NTE Electronics Inc MJ10016

    Bipolar Transistor, Npn, 500V; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:500V Rohs Compliant: Yes |Nte Electronics MJ10016
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    Newark MJ10016 Bulk 1
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    Solid State Devices Inc (SSDI) MJ10016

    Darlington Transistor, Npn, 500V, To-3; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:500V Rohs Compliant: Yes |Solid State MJ10016
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    Newark MJ10016 Bulk 25
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    SPC Multicomp MJ10012

    Trans, Npn, 400V, 10A, 200Deg C, 175W; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:400V Rohs Compliant: Yes |Multicomp Pro MJ10012
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    Newark MJ10012 Bulk 1,000
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    Find more MJ1001 price and stock on Findchips.com

    MJ1001 Datasheets (100)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJ1001 Central Semiconductor Leaded Power Transistor Darlington Original PDF
    MJ1001 Comset Semiconductors Complementary Power Darlingtons Original PDF
    MJ1001 Motorola MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Original PDF
    MJ1001 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan PDF
    MJ1001 Crimson Semiconductor EPITAXIAL BASE Transistor Scan PDF
    MJ1001 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJ1001 Motorola The European Selection Data Book 1976 Scan PDF
    MJ1001 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ1001 Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MJ1001 Motorola European Master Selection Guide 1986 Scan PDF
    MJ1001 Unknown Transistor Replacements Scan PDF
    MJ1001 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MJ1001 Unknown Cross Reference Datasheet Scan PDF
    MJ1001 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MJ1001 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MJ1001 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    MJ1001 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MJ1001 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    MJ1001 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    MJ10011 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF

    MJ1001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJH11021 equivalent

    Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)


    Original     		PDF MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018* MJH11020* MJH11021 equivalent BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159

    MJ10016

    Abstract: MJ10015 1N4937
    Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for


    Original     		PDF MJ10015 MJ10016 MJ10015 MJ10016 r14525 MJ10015/D 1N4937

    npn darlington 400v 10a

    Abstract: npn darlington 6A 400V MJ10012 400V to 6V DC Regulator Darlington Transistors MJ-10012
    Text: Inchange Semiconductor Product Specification MJ10012 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high current ・DARLINGTON APPLICATIONS ・Automotive ignition ・Switching regulator ・Motor control applications PINNING


    Original     		PDF MJ10012 npn darlington 400v 10a npn darlington 6A 400V MJ10012 400V to 6V DC Regulator Darlington Transistors MJ-10012

    MJ1000

    Abstract: MJ1001 MJ900 TRANSISTOR mj900 MJ901 motorola MJ1000
    Text: MOTOROLA Order this document by MJ1000/D SEMICONDUCTOR TECHNICAL DATA NPN MJ1000 MJ1001* Medium-Power Complementary Silicon Transistors *Motorola Preferred Device . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE


    Original     		PDF MJ900 MJ901 MJ1000 MJ1001 MJ1000/D* MJ1000/D MJ1000 MJ1001 MJ900 TRANSISTOR mj900 MJ901 motorola MJ1000

    automotive ignition tip162

    Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.


    Original     		PDF MJ10012 MJH10012 MJH10012 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A automotive ignition tip162 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295

    C2688

    Abstract: motorola tRANSISTOR c2688 mj10012 motorola 1N3947 MJ10012 2N3713 MOTOROLA tRANSISTOR c2688 MJ-10012 1N39 C2688(1)M
    Text: MOTOROLA Order this document by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.


    Original     		PDF MJ10012/D* MJ10012/D C2688 motorola tRANSISTOR c2688 mj10012 motorola 1N3947 MJ10012 2N3713 MOTOROLA tRANSISTOR c2688 MJ-10012 1N39 C2688(1)M

    MJ10012

    Abstract: pwm ic TRANSISTOR 2341 MJ-10012
    Text: NPN MJ10012 SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ10012 MJ10012 pwm ic TRANSISTOR 2341 MJ-10012

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: npn darlington transistor 150 watts 1N5825 MJ10012 MJH10012 MJH11017 MJH11018 MJH11019 MJH11020 MJH11021
    Text: MOTOROLA Order this document by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017 * . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.


    Original     		PDF MJH11017/D MJH10012 MJ10012) MJH11017 MJH11019 MJH11018, MJH11020, MJH11022, MJH11021 MJH11018 NPN 200 VOLTS 20 Amps POWER TRANSISTOR npn darlington transistor 150 watts 1N5825 MJ10012 MJH10012 MJH11017 MJH11018 MJH11019 MJH11020 MJH11021

    MJ1000

    Abstract: MJ900 MJ1001 MJ901
    Text: MJ900 – MJ901 PNP MJ1000 – MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and


    Original     		PDF MJ900 MJ901 MJ1000 MJ1001 MJ900, MJ901, MJ1000 MJ900

    MJ1000

    Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
    Text: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and


    Original     		PDF MJ900/901/1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ900 MJ901 ic 901 adc 515 Comset

    MJ10016

    Abstract: MJ10015 Darlington 40A Darlington NPN 250W NPN 400V 40A
    Text: MJ10015 & MJ10016 T−NPN, Si, Darlington w/Base−Emitter Speedup Diode Description: The MJ10015 and MJ10016 are Darlington transistors in a TO3 type package designed for high− voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch−mode applications.


    Original     		PDF MJ10015 MJ10016 MJ10015 MJ10016 Darlington 40A Darlington NPN 250W NPN 400V 40A

    mj10016

    Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,


    Original     		PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    MJ10014

    Abstract: MJ10013 MJ-10013
    Text: Ü&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS NPN MJ10013 MJ10014 The MJ10013 and MJ10014 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10013 MJ10014 MJ10014 MJ10013 -VCC-250Vâ MJ-10013

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications.


    OCR Scan     		PDF MJH11017/D MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018*

    MJ900

    Abstract: MJ1000 MJ901 3001 pnp MJ1001 MJ3001 B 817 c MJ2500 MJ2501 2N6053
    Text: - , SGS-THOMSON MJ900 901 1 Ë fKl MILifgTF!Hi ili] S MJ1000/1001 COMPLEMENTARY POWER DARLINGTONS lE S C R lP T IO N tie MJ900, MJ901, MJ1000 and MJ1001 are siii:on epitaxial-base transistors in monolithic Darlingon configuration, and are mounted in Jedec TO-3


    OCR Scan     		PDF MJ1000/1001 MJ900, MJ901, MJ1000 MJ1001 MJ900 MJ901 \/lJl001 3001 pnp MJ3001 B 817 c MJ2500 MJ2501 2N6053

    MJ10016

    Abstract: MJ10015 mj100 transistor MJ10015
    Text: SOLID STATE INC. 4 6 FA R R A N D S T R E E T B LO O M FIE LD , N E W J E R S E Y 0 7 0 0 3 www.solidstateinc.com SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10015 The MJ10015 and MJ10016 darlington transistors are designed


    OCR Scan     		PDF MJ10015 MJ10016 MJ10016 mj100 transistor MJ10015

    Untitled

    Abstract: No abstract text available
    Text: ¿S&MOSPEC SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN MJ10015 The MJ10015 and MJ10016 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper


    OCR Scan     		PDF MJ10015 MJ10015 MJ10016 MJ10016 MJ1001S

    TRANSISTOR mj900

    Abstract: MJ901 MJ900 mj1001
    Text: m o to ro la sc x s trs /r 12E f D I b3b72S4 0004^73 b | 7 ^3 3 - 3 / r - 3 3 '2 8 PNP MJ900, MJ901 MOTOROLA SEMICONDUCTOR NPN TECHNICAL DATA MJ1000, MJ1001 8.0 AMPERE D A R L IN G TO N POWER TRANSISTO RS C O M PLEM EN TA R Y SILICO N M EDIUM -POW ER C O M PLEM ENTARY


    OCR Scan     		PDF b3b72S4 MJ900, MJ901 MJ1000, MJ1001 MJ900 MJ1000* MJ901, MJ1001 TRANSISTOR mj900 MJ901

    mje2501

    Abstract: MJE370 MJ12005 MJE520 MJ12002 MJ12004 MJ13330 MJ10016 MJ10009 MJ13335
    Text: 0258354 ADVANCED SEM ICOND UCTOR 82D 00055 C f l l f t C O I V 1- — -ADVANCED TilAftiSISTOilU Pd @ Tc=25°C DEVICE TYPE POLARITY NO. MJ10005 NPN MJ10006 NPN MJ10007 NPN MJ10008 NPN MJ10009 NPN MJ10012 NPN MJ10013 NPN MJ10014


    OCR Scan     		PDF 0DD00SS MJ10005 MJ10006 MJ10007 MJ10008 MJ10009 MJ10012 MJ10013 MJ10014 MJ10015 mje2501 MJE370 MJ12005 MJE520 MJ12002 MJ12004 MJ13330 MJ10016 MJ13335

    MJ901

    Abstract: MJ1000 Complementary Darlington current Amplifier MJ900 adc 515 SILICON COMPLEMENTARY transistors darlington MJ1001 darlington complementary power amplifier complementary
    Text: MJ900, MJ901 PNP SILICON MJ1000, MJ1001 NPN 8.0 A M PER E D A R L IN G T O N POWER T R A N SIS T O R S C O M P L E M E N T A R Y SILIC O N M EDIUM -POW ER C O M P LEM EN T A R Y SIL IC O N T R A N SIS T O R S . . . for use as output devices in complementary general purpose


    OCR Scan     		PDF MJ900, MJ901 MJ1000, MJ1001 MJ900 MJ1000 Complementary Darlington current Amplifier adc 515 SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier complementary

    mj10012

    Abstract: MJ-10012
    Text: NPN SILICON POWER DARLINGTON TRANSISTORS The MJ10012 is a high voltage, high-current darlington transistor designed for automotive ignition,switching regulator and motor con­ trol applications. NPN MJ10012 FEATURES: Continuous Collector Current - lc = 10 A


    OCR Scan     		PDF MJ10012 MJ-10012

    Untitled

    Abstract: No abstract text available
    Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,


    OCR Scan     		PDF b3b72S4 MJ10014 MJ10014

    mj10015

    Abstract: mj10016 j10016 mj10 BTA 316 transistor
    Text: MOTOROLA Order this document by MJ10015/D SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS


    OCR Scan     		PDF MJ10015/D MJ10015 MJ10016 j10016 mj10 BTA 316 transistor