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    2306C Search Results

    2306C Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    8102306CA Texas Instruments High Speed Low-Noise JFET-Input Quad Operational Amplifier 14-CDIP -55 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    2306C Price and Stock

    Taiwan Semiconductor TSM2306CX-RFG

    MOSFET N-CHANNEL 30V 3.5A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TSM2306CX-RFG Cut Tape 64,515 1
    • 1 $0.73
    • 10 $0.491
    • 100 $0.73
    • 1000 $0.24245
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    TSM2306CX-RFG Digi-Reel 64,515 1
    • 1 $0.73
    • 10 $0.491
    • 100 $0.73
    • 1000 $0.24245
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    TSM2306CX-RFG Reel 63,000 3,000
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    Analog Devices Inc LTC2306CDD-PBF

    IC ADC 12BIT SAR 10DFN
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    DigiKey LTC2306CDD-PBF Tube 468 1
    • 1 $7.95
    • 10 $5.449
    • 100 $4.0772
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    Conductive Containers Inc 3230-6C

    CORREC-PAK SHIPPER NO FOAM
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    DigiKey 3230-6C Bulk 25
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    • 100 $4.9252
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    Elesa SPA CE.82306-C1

    DD52R, MECHANICAL POSITION INDIC
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    DigiKey CE.82306-C1 Bag 1
    • 1 $76.09
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    Elesa SPA CE.92306-C1

    DD52R, MECHANICAL POSITION INDIC
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    DigiKey CE.92306-C1 Bag 1
    • 1 $118.01
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    Find more 2306C price and stock on Findchips.com

    2306C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Single Digit

    Abstract: No abstract text available
    Text: LED Display Product Data Sheet LTS-2306CKD-P Spec No.: DS30-2013-0036 Effective Date: 07/20/2013 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.


    Original     		PDF LTS-2306CKD-P DS30-2013-0036 BNS-OD-FC001/A4 BNS-OD-C131/A4 48hours 100oC 125oC Single Digit

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-on Only LED DISPLAY LTS-2306CKD-P DATASHEET ITEM 1 2 Description New Spec Revised P/N error in page 1 PART NO.: LTS-2306CKD-P BNS-OD-C131/A4 By Reo Lin Reo Lin PAGE: DATE 2013/02/19 2013/03/08 1 of 12 LITE-ON TECHNOLOGY CORPORATION


    Original     		PDF LTS-2306CKD-P BNS-OD-C131/A4 LTS-2306CKD-P 48hours 100oC 125oC

    RD07MUS2B

    Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V


    Original     		PDF AN-VHF-047-A RD07MUS2B RD07MUS2B: 083YH-G" RD07MUS2B 175MHz 250mA 2302S 2306C RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E

    GRM2162C1H180JZ01D

    Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V


    Original     		PDF AN-UHF-105-A RD07MUS2B 380-430MHz RD07MUS2B: 086ZE-G" 380MHz, 405MHz, 430MHz, 250mA 18ksps, GRM2162C1H180JZ01D GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A

    RD07MUS2B

    Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier


    Original     		PDF AN-UHF-098-B RD07MUS2B 400-470MHz RD07MUS2B: 086ZE-G" RD07MUS2B 470MHz 250mA GRM216R11H223KA01E A0603 GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743

    350-400MHZ

    Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V


    Original     		PDF AN-UHF-106-A RD07MUS2B 350-400MHz RD07MUS2B: 08XXA-G" 350MHz, 375MHz, 400MHz, 250mA 18ksps, GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D

    RD01MUS2

    Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V


    Original     		PDF AN-UHF-097-B RD01MUS2 RD07MUS2B 400-470MHz RD07MUS2B 086ZE-G" 470MHz AN-UHF-097-B- RD01MUS2 GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C

    A78M05

    Abstract: 78Mos UA78M05HC MA78M15UC uA78M15HC 78M05HC 78M00 78M08 MA78M12UC ua78M15h
    Text: MA78M00 SERIES 3-TERMINAL POSITIVE VOLTAGE REGULATORS FAIRCHILD LINEAR INTEGRATED C IR C U ITS G ENERAL DESCRIPTION — The juA78M00 series o f 3-Terminal Medium Current Positive Voltage Regulators is constructed using the Fairchild Planar* epitaxial process. These regulators employ


    OCR Scan     		PDF MA78M00 juA78M00 jiA78M00 fiA78M00 A78M05 78Mos UA78M05HC MA78M15UC uA78M15HC 78M05HC 78M00 78M08 MA78M12UC ua78M15h

    Diode Marking ZM Motorola

    Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
    Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


    OCR Scan     		PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 1SMB5913A 241Sb C6459& Diode Marking ZM Motorola DIODE MOTOROLA 39A ZENER 18-2 5t

    51a zener

    Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
    Text: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


    OCR Scan     		PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 2306C 1SMB5913A 2415S 51a zener motorola ZENER 39a 10029a 1SMB5917A 6833a 1SMB5914A Motorola Zener 1SMB5915A