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    Murata Manufacturing Co Ltd GRM2162C1H101JA01D

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    Quest Components GRM2162C1H101JA01D 30,070
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    GRM2162C1H101JA01D Datasheets Context Search

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    GRM1882C1H100JA01D

    Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V


    Original     		PDF AN-900-040-A RD01MUS1 RD07MUS2B 763-870MHz RD07MUS2B: 086ZE-G" RD01MUS1: RD07MUS2B 250mA GRM1882C1H100JA01D GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D

    GRM2162C1H101JA01D

    Abstract: H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E RD07MUS2B
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-041-A Date : 8th Mar. ‘10 Rev.date : 30th Jun. 2010 Prepared : K.IJUIN S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V SUMMARY: This application note shows the TETRA data .


    Original     		PDF AN-900-041-A RD07MUS2B 800-870MHz RD07MUS2B: 086ZE-G" 800MHz, 820MHz, 840MHz, 860MHz, 870MHz, GRM2162C1H101JA01D H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E

    GRM2162C1H180JZ01D

    Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V


    Original     		PDF AN-UHF-105-A RD07MUS2B 380-430MHz RD07MUS2B: 086ZE-G" 380MHz, 405MHz, 430MHz, 250mA 18ksps, GRM2162C1H180JZ01D GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A

    GRM21BB31

    Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2
    Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2

    74n7

    Abstract: R1766T
    Text: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550234 R09DS0039EJ0300 NE5550234 NE5550234-AZ 74n7 R1766T

    350-400MHZ

    Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V


    Original     		PDF AN-UHF-106-A RD07MUS2B 350-400MHz RD07MUS2B: 08XXA-G" 350MHz, 375MHz, 400MHz, 250mA 18ksps, GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550234 R09DS0039EJ0300 NE5550234-AZ HS350 R09DS0039EJ0300 NE5550234 Panasonic R1766

    74n7

    Abstract: L1-L10 D2074 ne5550
    Text: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-AZ 74n7 L1-L10 D2074 ne5550