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    1SV310 Price and Stock

    Toshiba America Electronic Components 1SV310TPH3F

    DIODE VARACTOR 10V USC
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    DigiKey 1SV310TPH3F Cut Tape 2,592 1
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    1SV310TPH3F Digi-Reel 2,592 1
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    1SV310TPH3F Reel 3,000
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    Avnet Americas 1SV310TPH3F Reel 20 Weeks 3,000
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    Mouser Electronics 1SV310TPH3F 2,979
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    HUBER+SUHNER 32061SE-29171SVCR3-29171SVCR3-10

    RF Cable Assemblies VITA 67.3 SMPS(f) to VITA 67.3 SMPS(f)
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    Mouser Electronics 32061SE-29171SVCR3-29171SVCR3-10
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    1SV310 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV310 Kexin Variable Capacitance Diode (VCO for UHF Band Radio) Original PDF
    1SV310 Toshiba Variable Capacitance Diodes; Surface Mount Type: Y; Package: USC; Number of Pins: 2; Application Scope: VHF/UHF VCO Original PDF
    1SV310 TY Semiconductor Variable Capacitance Diode (VCO for UHF Band Radio) - SOD-323 Original PDF
    1SV310 Unknown Capacitance diode (Varactor, varicap) Scan PDF
    1SV310 Toshiba Silicon epitaxial planar type diode VCO for UHF band radio Scan PDF
    1SV310 Toshiba DIODE SILICON EPITAXIAL PLANAR TYPE Scan PDF
    1SV310TPH3 Toshiba 1SV310TPH3 - Diode VAR Cap Single 10V 9.7pF 2-Pin USC T/R Original PDF
    1SV310(TPH3,F) Toshiba 1SV310 - DIODE VARACTOR 10V 1-1E1A Original PDF
    1SV310TPH3F Toshiba 1SV310 - Varactor Diodes 10V C1=9.7-11.1pF Original PDF

    1SV310 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1SV310

    Abstract: No abstract text available
    Text: 1SV310 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.1 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C)


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    1SV310 1SV310 PDF

    1SV310

    Abstract: No abstract text available
    Text: 1SV310 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.1 typ. · Low series resistance: rs = 0.28 Ω (typ.) · Useful for small size tuner Maximum Ratings (Ta = 25°C) Characteristics


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    1SV310 1SV310 PDF

    1SV310

    Abstract: No abstract text available
    Text: 1SV310 東芝ダイオード シリコンエピタキシャルプレーナ形 1SV310 ○ UHF 帯無線 VCO 用 単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.28 Ω 標準 • 2 端子超小型外囲器なので、VCO の小型化に適しています。


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    1SV310 1SV310 PDF

    DIODE smd marking v1

    Abstract: 1SV310 smd diode marking 111
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SV310 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=2.1 Typ. Low Series Resistance:rs=0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02


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    1SV310 OD-323 DIODE smd marking v1 1SV310 smd diode marking 111 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SV310 SOD-323 +0.05 0.85-0.05 +0.1 1.3-0.1 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Features High Capacitance Ratio:C1V/C4V=2.1 Typ. Low Series Resistance:rs=0.28 +0.1 2.6-0.1 1.0max (Typ.) 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25


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    1SV310 OD-323 PDF

    1SV310

    Abstract: No abstract text available
    Text: 1SV310 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV310 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.1 typ. • Low series resistance: rs = 0.28 Ω (typ.) • Useful for small size tuner Absolute Maximum Ratings (Ta = 25°C)


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    1SV310 1SV310 PDF

    1SV310

    Abstract: No abstract text available
    Text: 20010319 1SV310 SPICE PARAMETER SPICE MODEL: BERKLEY SPICE2G6 DIODE MODEL DATA FORMAT: MODEL FORMAT SPICE SYMBOL: IS A ,RS(Ω) ,N(-) ,CJ0(F) ,VJ(V) ,M(-) ,BV(V) ,IBV(A) ,XTI(-) FREQUENCY RANGE: f = 0.1 GHz~3 GHz REVERSE VOLTAGE RANGE: VR = 0.5V ~ 4 V


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    1SV310 824E-16 00E-04 636E-11 00E-09 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X PDF

    RFM70U12D

    Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
    Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック


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    SCJ0004N 2SC2714 2SC2715 2SC2716 2SC3123 2SC5064 2SC5084 2SC5089 2SC5094 2SC5106 RFM70U12D 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919 PDF

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


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    BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000 PDF

    2sc5108

    Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
    Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,


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    BCE0003E 2sc5108 toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz PDF

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


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    BCE0003H 3sk catalog TE85L Toshiba PDF

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


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    BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 PDF

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


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    2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


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    2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


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    2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 PDF

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


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    SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 PDF

    1SV310

    Abstract: No abstract text available
    Text: TO SH IBA 1SV310 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 0 VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Unit in mm : C i v / C 4 v = 2.1 Typ. : rs = 0 .2 8 0 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    1SV310 1SV310 PDF

    1SV310

    Abstract: No abstract text available
    Text: 1SV310 TOSHIBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 0 Unit in mm High Capacitance Ratio : C iy /C 4v = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)


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    1SV310 470MHz 1SV310 PDF

    1SV310

    Abstract: No abstract text available
    Text: TO SH IBA 1SV310 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 0 VCO FOR UHF BAND RADIO • High Capacitance Ratio • Low Series Resistance • Unit in mm : C i v / C 4 v = 2.1 Typ. : rs = 0 .2 8 0 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    1SV310 1SV310 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SV310 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 310 Unit in mm VCO FOR UHF BAND RADIO • • • High Capacitance Ratio : C iy /C 4V = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner 0±0.05 + 0.1 0.15-0.06


    OCR Scan
    1SV310 PDF

    1SV310

    Abstract: No abstract text available
    Text: 1SV310 TO SH IBA TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 0 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.1 Typ. Low Series Resistance : rs = 0.280 (Typ.) Useful for Small Size Tuner MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    1SV310 1SV310 PDF