Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1RFS Search Results

    SF Impression Pixel

    1RFS Price and Stock

    Toshiba America Electronic Components TCR3DM11,RF(SE

    LDO REG IOUT: 300MA VIN: 6V VOUT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TCR3DM11,RF(SE Digi-Reel 9,370 1
    • 1 $0.53
    • 10 $0.316
    • 100 $0.1951
    • 1000 $0.12759
    • 10000 $0.09915
    Buy Now
    TCR3DM11,RF(SE Cut Tape 9,370 1
    • 1 $0.53
    • 10 $0.316
    • 100 $0.1951
    • 1000 $0.12759
    • 10000 $0.09915
    Buy Now
    TCR3DM11,RF(SE Reel 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.09008
    Buy Now
    Avnet Americas TCR3DM11,RF(SE Reel 20 Weeks 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.08721
    Buy Now
    Mouser Electronics TCR3DM11,RF(SE 19,970
    • 1 $0.51
    • 10 $0.26
    • 100 $0.144
    • 1000 $0.124
    • 10000 $0.094
    Buy Now

    Ohmite Mfg Co HS100F1RFS1

    RES CHAS MNT 1 OHMS 1% 100W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HS100F1RFS1 Box 38 1
    • 1 $24.88
    • 10 $15.693
    • 100 $11.4125
    • 1000 $11.4125
    • 10000 $11.4125
    Buy Now

    Nextgen Components SMW1WL001RFS21

    RES 1W 1 OHM 1% SMD2515
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMW1WL001RFS21 Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.15
    Buy Now

    Samtec Inc GCT-206150-11-R-FS

    GCT SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GCT-206150-11-R-FS Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Samtec Inc TCMD-25-D-02.50-01-RF-SR

    2MM DOUBLE ROW MALE IDC ASSEMBLY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TCMD-25-D-02.50-01-RF-SR Bulk 1
    • 1 $13.06
    • 10 $13.06
    • 100 $13.06
    • 1000 $13.06
    • 10000 $13.06
    Buy Now
    Avnet Americas TCMD-25-D-02.50-01-RF-SR Bulk 1
    • 1 $12.28
    • 10 $11.62
    • 100 $9.85
    • 1000 $9.85
    • 10000 $9.85
    Buy Now
    Mouser Electronics TCMD-25-D-02.50-01-RF-SR
    • 1 $12.28
    • 10 $11.62
    • 100 $9.85
    • 1000 $7.06
    • 10000 $7.06
    Get Quote
    Master Electronics TCMD-25-D-02.50-01-RF-SR
    • 1 -
    • 10 $16.29
    • 100 $10.71
    • 1000 $7.38
    • 10000 $7.38
    Buy Now

    1RFS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IM-608 IM-608 Model 8320 & 8321 Operation & Installation Manual Model 8320 & 8321 Series Programmable Attenuator Units This documentation may not be reproduced in any form, for any purpose unless authorized in writing by Aeroflex / Weinschel, Inc. Aeroflex / Weinschel, Inc.


    Original
    PDF IM-608

    AKD4753

    Abstract: AK4753 2FC17 AK4683 2FB2 2FC12 1E1B9 2FB15 1FC6 MARKING 1FA8
    Text: [AK4753] AK4753 2-in, 4-out CODEC with DSP Functions GENERAL DESCRIPTION The AK4753 is a two input, four output audio CODEC with integrated digital signal processing. The outputs can be configured either as single-ended or differential. An internal PLL allows the chip to run in


    Original
    PDF AK4753] AK4753 AK4753 103dB MS1311-E-00 AKD4753 2FC17 AK4683 2FB2 2FC12 1E1B9 2FB15 1FC6 MARKING 1FA8

    AD14060

    Abstract: ad14060lbf AD14060L ADSP-21060 lA1d ms2107 ADSP-20160 22760a
    Text: Quad-SHARC DSP Multiprocessor Family AD14060/AD14060L CS TIMEXP LINK 1 LINK 3 LINK 4 IRQ2–0 FLAG2, 0 CPA SPORT 1 SPORT 0 TCK, TMS, TRST FLAG1 FLAG3 TDO LINK 0 LINK 2 LINK 5 TDI SHARC_B EBOOT, LBOOT, BMS EMU CLKIN RESET SPORT 0 TCK, TMS, TRST FLAG1 FLAG3


    Original
    PDF AD14060/AD14060L ADDR31 DATA47 308-Lead QS-308) AD14060BF-4 AD14060LBF-4 C00667 AD14060 ad14060lbf AD14060L ADSP-21060 lA1d ms2107 ADSP-20160 22760a

    1RFS840

    Abstract: 1RFS840A
    Text: 1RFS840A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower Ro^c*, : 0.638 £2 (Typ.)


    OCR Scan
    PDF 1RFS840A IRFS84 IRFS840A 1RFS840 1RFS840A

    samsung

    Abstract: 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020
    Text: - f ± ft Vd s or ? Vd g t s £ tt « £ Vg s rTS fê Ta;:25°C Id * /CH Pd ft m. V g s th) Id s s Ig s s min * /CH (nA) Vg s (V) max Id Vd s (m a ) (V) Vd s = Vg s (V) (V) 4# te Id (oii) D s (o n ) Ciss g fs Coss Crss Vg s =0 (max) *typ Vg s ( 0 ) (V) Id


    OCR Scan
    PDF 18FS963Z O-220 IRFS9S33 1RFS9640 1RFS9641 1RFS964! 1RFS964 samsung 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020

    514256A

    Abstract: MCM32256AS70
    Text: MU1UHULA • SEMICONDUCTOR TECHNICAL DATA MCM32256 MCM32L256 256K x 32 Bit Dynamic Random Access Memory Module T he M CM 32256 is an 8M dynam ic random access mem ory DRAM module organized as 262,144 x 32 bits. The module is a 72-lead single-in-line mem ory


    OCR Scan
    PDF 72-lead 14256A MCM32256AS70 MCM32256AS80 32L256 MCM32256ASG70 MCM32256ASG80 MCM32L256AS70 MCM32L256ASG70 514256A

    IC CD 4440 pin diagram

    Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate


    OCR Scan
    PDF MCM44400 MCM4L4400 MOTOD010 4L4400 MCM44400N60 MCM44400N70 MCM44400N80 MCM4L4400N60 IC CD 4440 pin diagram GZ150 MCM4L4400-70 MCM44400N-60

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan
    PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830

    1RFS730

    Abstract: irfs730a
    Text: IRFS730A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gale Charge Extended Safe Operating Area Lower Leakage Current : 10 pA{M ax. @ V^. =400V - 400V


    OCR Scan
    PDF IRFS730A 1RFS730A 1RFS730 irfs730a

    03N087

    Abstract: No abstract text available
    Text: THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PR O PR IE TA R Y DESIGN OF PACKARD E L E C T R IC DIVISION AND IS NOT TO B E D UPLICATED OR REPRODUCED WITH­ OUT AUTHO RITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCAL E SYM AUTH REVISION RECORD


    OCR Scan
    PDF I0MR86 22MY86 12065645-INSULATQR 05N086 03N087 0IN088 2IMR86 date25MR86 03N087

    IRF 450 MOSFET

    Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
    Text: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high


    OCR Scan
    PDF IRF820 IRF821 IRF823 221a-04 tq-220ab IRF821. IRF 450 MOSFET IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821

    SP0256-AL2

    Abstract: SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 SP0256 sound phase checker SPO-256
    Text: r a ï b a c k D oc. # 17517 Catalog Number 276-1784 TECHNICAL DATA AN EXCLUSIVE RADIO SHACK SERVICE TO THE EXPERIMENTER SP0256 NARRATO R SPEECH PROCESSOR Features Tim • • * • * * • RÔM D VDD C 7 S&Y c 6 DS^C 9 w c ■0 A7 c I Stfl OUT c 12 AÔC l ì


    OCR Scan
    PDF SP0256 SP0256 290MS 250MS 160MS 280MS 300MS 240MS 100MS 240M5 SP0256-AL2 SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 sound phase checker SPO-256

    1rfs

    Abstract: No abstract text available
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-028G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS


    OCR Scan
    PDF HN58C1001 128-kword ADE-203-028G 131072-word 128-byte TFP-32DAR) 1rfs

    lzl 24h

    Abstract: pioneer PAL 007 A CNC DRIVES ford EEC V pioneer PEG 468 AM27S43 AM29300 am29325 Am29434 YA11
    Text: a 32-Bit Microprosrammable Products Am29C300/29300 1 9 8 8 D ata B o o k Advanced Micro D e v ic e s a Advanced Micro Devices Am29C300/29300 Data Book 1988 Advanced Micro Devices Advanced Micro Devices reserves the right to make changes in its products without


    OCR Scan
    PDF 32-Bit Am29C300/29300 B-33M-1/88-0 9372A lzl 24h pioneer PAL 007 A CNC DRIVES ford EEC V pioneer PEG 468 AM27S43 AM29300 am29325 Am29434 YA11

    4229-3CB

    Abstract: ferroxcube Ee core pw 380v 04 x L4819
    Text: May 1997 % M i c r o Linear ML4819 Power Factor and P W M Controller "C o m b o " GENERAL DESCRIPTION FEATURES The ML4819 is a com plete boost m ode Pow er factor Controller PFC w hich also contains a PW M controller. The PFC circuit is sim ilar to the ML4-812 while the PWM


    OCR Scan
    PDF ML4819 ML4819 ML4-812 4229-3CB ferroxcube Ee core pw 380v 04 x L4819

    Untitled

    Abstract: No abstract text available
    Text: IRFS610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 200V


    OCR Scan
    PDF IRFS610A O-220F 1RFS610A

    IRFS640

    Abstract: irfs641
    Text: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lower input ca p acita nce • Extended safe operating area • Improved high tem perature reliability


    OCR Scan
    PDF IRFS640/641 IRFS640 IRFS641 O-220 -160V

    FR9110

    Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
    Text: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210


    OCR Scan
    PDF 1RFR9020 IRFR9022 FR9110 1RFR9111 IRFR9120 IRFR-247 IRFS150 O-247 IRFS151 FR91 Samsung D-PAK IRFR9121 IRFR9210 IRFR9212

    MCM4117L-15

    Abstract: MCM4117L-20 MCM4117L-25 MCM4117L-30
    Text: M O TO R O LA M C M 4117 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY MOS N-CHANNEL 16,384-BIT DYN AM IC RANDOM ACCESS M EM ORY dou ble-polysilicon te c h n o lo g y , this device optim izes speed, pow er, a *S v m S S n o ro w and co lu m n address in puts, th e M C M 4 1 17 re­


    OCR Scan
    PDF 384-BIT MCM4117 MCKM117 18-Pin 384x1 MCM4117 MCM4117L-15 MCM4117L-20 MCM4117L-25 MCM4117L-30

    soc toshiba

    Abstract: TC521000P JD-03
    Text: TOSHIBA MOS MEMORY PRODUCTS TC521000P/J 1MBit 256K X PRELIMINARY 4 Field Memory IDESCRIPTION 1 The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4_bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K


    OCR Scan
    PDF TC521000P/J TC521000P/J 33MHz DIP40-P-600 soc toshiba TC521000P JD-03

    b 772 p

    Abstract: No abstract text available
    Text: MOSFETs FUNCTION GUIDE TO-3P FULL P ACK A G E N -CH A N N EL BVos$ V lo(on)(A) Ros(on)(Q) R0jc(K/W) Po(Watt) Page IRFS141 IRFS151 60 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS140 IRFS150 100 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS241


    OCR Scan
    PDF IRFS141 IRFS151 IRFS140 IRFS150 IRFS241 1RFS251 IRFS240 IRFS250 IRFS341 IRFS351 b 772 p

    1RFS640A

    Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
    Text: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A


    OCR Scan
    PDF T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A RF550A 1RFS640A irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A SSP45N20A

    Untitled

    Abstract: No abstract text available
    Text: HM65W8512 Series 524288-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-289B Z Rev. 2.0 Dec. 9, 1994 Description The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 512-kword x 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (im Hi-CMOS process


    OCR Scan
    PDF HM65W8512 524288-word ADE-203-289B 512-kword 525-mil 460-mil

    1rfz30

    Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212
    Text: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210


    OCR Scan
    PDF IRFU020 T0-251AA 1RFU022 O-251AA RFU310 1RFU32Ã 1RFU411 IRFU420 IRFU901Ã IRFU9012 1rfz30 1RFU220 irfu110 IRFU121 irfu310 IRFU111 IRFU120 IRFU210 IRFU212