IRFS351 Search Results

IRFS351 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRFS351		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
IRFS351		Unknown	FET Data Book		Scan	PDF
IRFS351		Samsung Electronics	N-Channel Power MOSFETS		Scan	PDF

IRFS351 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFS351 Abstract: 250M IRFS350 Text: N-CHANNEL POWER MOSFETS IRFS350/351 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	IRFS350/351 IRFS350 IRFS351 250M
b 772 p Abstract: No abstract text available Text: MOSFETs FUNCTION GUIDE TO-3P FULL P ACK A G E N -CH A N N EL BVos$ V lo(on)(A) Ros(on)(Q) R0jc(K/W) Po(Watt) Page IRFS141 IRFS151 60 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS140 IRFS150 100 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS241	OCR Scan	PDF	IRFS141 IRFS151 IRFS140 IRFS150 IRFS241 1RFS251 IRFS240 IRFS250 IRFS341 IRFS351 b 772 p
IRFS432 Abstract: IRFS130 Text: FUNCTION GUIDE POWER MOSFETs TO-3P FULL PACKAGE NCHANNEL BVdss V IIXonXA) RDS(onXO) 80.00 8.30 9.70 17.30 19.40 23.50 27.50 0.230 0.160 0.100 0.077 0.080 0.055 IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 100.00 8.30 9.70 17.30 19.40 23.50 27.70 0.230	OCR Scan	PDF	IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 IRFS132 IRFS130 IRFS142 IRFS140 IRFS432
1RFS530 Abstract: Samsung s3 IRFS250 IRFS251 IRFS252 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342 Text: - 304 - f m % X H Vd s tí: £ Vg s m fô Ta= 2 5 ' 0 !d Pd Ig s s V g s th Id s s or € * V dg l (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) m 1d (mA) tt ai Ds(or.) Vd s = Vg s (13= 2 5 0 Id (on) Ciss g fs Coss Crss V g s -0	OCR Scan	PDF	IRFS250 T0-247 IRFS251 IRFS252 O-247 1RFS330 IRFS33I 1RFS530 Samsung s3 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342