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    1MX4 Price and Stock

    onsemi ESDL2031MX4T5G

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    DigiKey ESDL2031MX4T5G Cut Tape 61,501 1
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    ESDL2031MX4T5G Digi-Reel 61,501 1
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    Mouser Electronics ESDL2031MX4T5G 19,525
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    Newark ESDL2031MX4T5G Reel 10,000
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    Rochester Electronics ESDL2031MX4T5G 890,000 1
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    onsemi ESDM1051MX4T5G

    TVS DIODE 5.5VWM 10VC 2X4DFN
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    DigiKey ESDM1051MX4T5G Digi-Reel 9,970 1
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    ESDM1051MX4T5G Cut Tape 9,970 1
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    Avnet Americas ESDM1051MX4T5G Reel 0 Weeks, 2 Days 19,231
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    ESDM1051MX4T5G Reel 6 Weeks 20,000
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    Mouser Electronics ESDM1051MX4T5G 9,584
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    Newark ESDM1051MX4T5G Bulk 10,000
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    Rochester Electronics ESDM1051MX4T5G 8,304 1
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    Avnet Asia ESDM1051MX4T5G 6 Weeks 20,000
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    Avnet Silica ESDM1051MX4T5G 7 Weeks 10,000
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    Flip Electronics ESDM1051MX4T5G 239,077
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    Wuhan P&S ESDM1051MX4T5G 9,739 1
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    onsemi ESDM1131MX4T5G

    TVS DIODE 3.3VWM 5.6VC 2X4DFN
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    DigiKey ESDM1131MX4T5G Cut Tape 8,071 1
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    Rochester Electronics ESDM1131MX4T5G 27,800,000 1
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    Flip Electronics ESDM1131MX4T5G 90,000
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    onsemi ESD7011MX4T5G

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    DigiKey ESD7011MX4T5G Digi-Reel 7,990 1
    • 1 $0.3
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    ESD7011MX4T5G Cut Tape 7,990 1
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    Newark ESD7011MX4T5G Bulk 10,000
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    Rochester Electronics ESD7011MX4T5G 20,000 1
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    Lumileds L1MX-407012V500000

    LED LUXEON NEUTRAL WHT 4000K SMD
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    DigiKey L1MX-407012V500000 Cut Tape 3,073 1
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    L1MX-407012V500000 Digi-Reel 3,073 1
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    L1MX-407012V500000 Reel 3,000 500
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    • 10000 $3.38149
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    Mouser Electronics L1MX-407012V500000 2,958
    • 1 $7.16
    • 10 $5.1
    • 100 $4.04
    • 1000 $3.41
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    Avnet Silica L1MX-407012V500000 10 Weeks 3,000
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    Find more 1MX4 price and stock on Findchips.com

    1MX4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J

    Untitled

    Abstract: No abstract text available
    Text: PcRam TS1M9360 Description Features The TS1M9360 is a 1M by 9-bit dynamic RAM • 1,048,576-word by 9-bit organization. module with 2pcs of 1Mx4 and 1pc of 1Mx1 DRAMs • Fast Page Mode operation. assembled on the printed circuit board. • Single +5.0V ± 10% power supply.


    Original     		PDF TS1M9360 TS1M9360 576-word TS1M9360me

    we 510

    Abstract: UG9M
    Text: UG9M13621DBG T 4M Bytes (1M x 36 ) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13621DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13621DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS


    Original     		PDF UG9M13621DBG 72Pin 300mil 1000mil) we 510 UG9M

    1Mx4

    Abstract: No abstract text available
    Text: UG8M13201DBJ N 4M Bytes (1M x 32 ) DRAM 72Pin SIMM based on 1M X 4 General Description Features The UG8M13201DBJ(N) is a 1,048,576 bits by 32 SIMM module.The UG8M13201DBJ(N) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package,mounted on a 72 Pin unbuffered


    Original     		PDF UG8M13201DBJ 72Pin 300mil 500mil) D661-2788 1Mx4

    Untitled

    Abstract: No abstract text available
    Text: K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I 160mA 155mA 150mA 190mA 185mA 180mA

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		PDF K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5360140U1EUUU Modular Technologies November 12, 1996 4MByte 1M x 36 DRAM Module - 1Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU Standard


    Original     		PDF SM5360140U1EUUU 72-pin 60/70/80ns 300mil SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU

    Untitled

    Abstract: No abstract text available
    Text: IC41UV4105 Document Title 1Mx4 bit Dynamic RAM with Fast Page Mode Revision History Revision No History Draft Date Remark 0A 0B Initial Draft 1.Change for VCC 2.6±0.3 to 2.6±0.2V August 9,2001 August 24,2001 Preliminary The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and


    Original     		PDF IC41UV4105 DR020-0B IC41UV4105-50J IC41UV4105-50T IC41UV4105-70J IC41UV4105-70T IC41UV4105-100J IC41UV4105-100T

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5331000 Modular Technologies February 12, 1997 4MByte 1M x 33 DRAM Module - 1Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :


    Original     		PDF SM5331000 72-pin 60/70/80ns 300mil AMP-7-382486-2 AMP-822019-4 AMP-822110-3

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4004C1C-C, K6R4004C1C-I Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF K6R4004C1C-C, K6R4004C1C-I 160mA 155mA 150mA 190mA 185mA 180mA

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		PDF KM644002C, KM644002CI 32-SOJ-400

    HY514400A

    Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
    Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    Original     		PDF HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT

    taa 440

    Abstract: No abstract text available
    Text: SMART SM5320140U1XUUU Modular Technologies November 19, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU Standard


    Original     		PDF SM5320140U1XUUU 72-pin SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU 60/70/80ns 300mil AMP-7-382486-2 AMP-822019-4 taa 440

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5320140U1XSUU Modular Technologies May 13, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SODIMM Features Part Numbers • • • • • • • • • • • SM532014001XSUU SM532014011XSUU SM532014081XSUU SM532014091XSUU Standard :


    Original     		PDF SM5320140U1XSUU 72-pin SM532014001XSUU SM532014011XSUU SM532014081XSUU SM532014091XSUU 60/70/80ns 300mil

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM64V4002B/BL, KM64V4002BI/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark


    Original     		PDF KM64V4002B/BL, KM64V4002BI/BLI 32-TSOP2-400F 047MAX 002MIN

    44-TSOP2

    Abstract: K6R4004C1D
    Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		PDF K6R4004C1D 115mA 100mA 32-SOJ-400 44-TSOP2 K6R4004C1D

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    Untitled

    Abstract: No abstract text available
    Text: High P erform ance 1MX4 CMOS DRAM H A S4C14405 Il IM X 4 C M 0 S EDO DRAM Preliminary information Features • 1024 refresh cydes, 16 ms refresh interva • Organization: 1,048,576 words x 4 bit • High speed - RAS-only o r CAi>-before-RAS refresh • Read-modify-write


    OCR Scan     		PDF S4C14405 26/20-pin AS4C14405-60JC 26/20-pin 0Q34HC

    Untitled

    Abstract: No abstract text available
    Text: KM644002, KM644002E, KM644002I CMOS SRAM Document Title 1Mx4 Bit with OË High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0


    OCR Scan     		PDF KM644002, KM644002E, KM644002I KM644002I KM644002E

    KM44C4000aS 6

    Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6


    OCR Scan     		PDF KM41C4000C-5 KM41C4000CL-5 KM41C4002C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000CL-7 KM41C4002C-7 KM41V4000C-7 KM41V4000CL-7 KM41C4000C-8 KM44C4000aS 6 KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL

    km44c1003cj

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS


    OCR Scan     		PDF KMM5361203AW/AWG KMM5361203AW/AWG 1Mx36 1Mx16 KMM5361203AW 42-pin 24-pin 72-pin KMM5361233AW km44c1003cj

    Untitled

    Abstract: No abstract text available
    Text: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400B HY514400B 4b750flfl 1AC11-10-MAY95 HY514400BJ HY514400BLJ HV514400BSLJ

    A19T

    Abstract: No abstract text available
    Text: Prelim inary CMOS SRAM KM 64V4002B/BL, KM 64V4002B/BLI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Draft Data R em ark


    OCR Scan     		PDF KM64V4002B/BL, KM64V4002B/BLI 32-SOJ-400 A19T