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    HY514400A Price and Stock

    SK Hynix Inc HY514400AJ-70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY514400AJ-70 82
    • 1 -
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    Quest Components HY514400AJ-70 235
    • 1 $4.23
    • 10 $2.115
    • 100 $1.833
    • 1000 $1.833
    • 10000 $1.833
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    HY514400AJ-70 167
    • 1 $4.23
    • 10 $4.23
    • 100 $2.6085
    • 1000 $2.6085
    • 10000 $2.6085
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    HY514400AJ-70 115
    • 1 $4.23
    • 10 $4.23
    • 100 $2.6085
    • 1000 $2.6085
    • 10000 $2.6085
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    HY514400AJ-70 26
    • 1 $4.23
    • 10 $2.115
    • 100 $2.115
    • 1000 $2.115
    • 10000 $2.115
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    SK Hynix Inc HY514400ALJ-60

    1M X 4 FAST PAGE DRAM, 60 NS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY514400ALJ-60 330
    • 1 $8.82
    • 10 $8.82
    • 100 $3.822
    • 1000 $3.528
    • 10000 $3.528
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    HY514400ALJ-60 30
    • 1 $8.82
    • 10 $4.41
    • 100 $4.41
    • 1000 $4.41
    • 10000 $4.41
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    hyn HY514400AJ70

    1M X 4, FAST PAGE MODE Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY514400AJ70 120
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    HY514400A Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY514400A Hyundai 1m x 4-bit Cmos DRAM Scan PDF
    HY514400AJ Hynix Semiconductor 1Mx4, Fast Page mode Original PDF
    HY514400AJ Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400AJ50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400AJ60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400AJ70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALJ50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALJ70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALR Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALR50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALR60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALR70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALT Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400ALT50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALT60 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400ALT70 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF
    HY514400AR Hyundai 1M x 4-bit CMOS DRAM Scan PDF
    HY514400AR50 Hyundai 1M x 4-Bit CMOS DRAM Scan PDF

    HY514400A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY514400A

    Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
    Text: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    Original     		PDF HY514400A /RAS-on28ms 10/Jan HY514400A HY514400AJ HY514400ALJ HY514400ALT HY514400AT

    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-bit HY514400A 22/iF HYM5321OOAM/ALM HYM532100AMG/ALMG 1CC03-00-M

    Untitled

    Abstract: No abstract text available
    Text: HYM •HYUNDAI 1M X 532100A M-Series 32-blt CMOS DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit R e t page mode CMOS ORAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted lo r each DRAM.


    OCR Scan     		PDF 32100A 32-blt HYM532100A 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG compatible004M 750M6 004t1

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM532100A M-Series 1M x 32-blt CM O S DRAM MODULE DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMO S DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532100A 32-blt 32-bit HY514400A HYM532100AM/ALM HYM532100AMG/ALMG M532100A 1CC03-01-FEB94 4b75DBB

    mr 6710

    Abstract: HY514400A HY514400ALJ HY514400ALR HY514400ALT F 421
    Text: » « H Y U N D A I H Y 5 1 4 4 0 0 A Vi • 1M X 4-bit S e r ie s CMOS DRAM DESCRIPTION The HY51440QA is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CMOS silicon gate process technology as weH as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY51440GA 014Q3 1AC07-30-MAY95 4L750Ã HY514400AJ HY514400ALJ mr 6710 HY514400ALR HY514400ALT F 421

    HYM532200

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532200A M-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200Ais a 2M x 32-bit Fast page m ode CMOS DRAM m odule consisting o f sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iFdecoupling capacitor is mounted for each ORAM.


    OCR Scan     		PDF HYM532200A 32-bit HYM532200Ais HY514400A HYM532200AM/ALM HYM532200AMG/ALMG DQ0-DQ31) 1C003-01-FEB94 HYM532200

    57210

    Abstract: No abstract text available
    Text: •HYUNDAI HYM572103 N-Series 1M X 72-blt CMOS DRAM MODULE DESCRIPTION The HYM572103 is a 1M x 72-bit Fast page m ode CMOS DRAM m odule consisting of sixteen HY514400A in 20/26 pin SOJ o r TSOP-II tw o HY514403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line driver in TSSOP on


    OCR Scan     		PDF HYM572103 72-blt 72-bit HY514400A HY514403B 16-bit HYM572103NG/TNG/LMG/LTMG 121mW 209mW 57210

    HYM5361

    Abstract: HYM536100AMG hym536100
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


    OCR Scan     		PDF 36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 1BB0fr40-M 1BB05-00-M 1BB05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI H Y 5 1 4 4 0 0 A Series 1M X 4-bit CMOS DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynam ic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY514400A HY514400A 047fl 4L750Ã 1AC07-30-MAY95 HY514400AJ HY514400ALJ HY514400AT

    HYM536100A

    Abstract: No abstract text available
    Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 132-OmW DGG20b4

    Untitled

    Abstract: No abstract text available
    Text: HYM532200A M-Series •HYUNDAI 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A Is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22fi? decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532200A 32-bit HY514400A HYM532200AM/ALM HYM532200AMG/ALMG 1CD03-01-FEBM DGD34SD

    Untitled

    Abstract: No abstract text available
    Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)

    HYM536200AM

    Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
    Text: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling


    OCR Scan     		PDF HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM

    512kx4

    Abstract: 7150M
    Text: HY514400A Series •HYUNDAI 1M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 4M bit d ynam ic RAM organized 1,048,576 x 4-bit configuration with CM O S DRAMs. T he circuit and process design allow th is d e vice to achieve high perform ance and low power dissipation.


    OCR Scan     		PDF HY514400A HY514400AJ HY514400ALJ Y514400AT HY514400ALT HY514400AR Y514400ALR 50/60/70only. 128ms 512kx4 7150M

    Untitled

    Abstract: No abstract text available
    Text: «MYU1IDAI • HY514400A 1Mx4, Fast Page mode DESCRIPTION This fam ily is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan     		PDF HY514400A 128ms 15-These

    HYM532100

    Abstract: No abstract text available
    Text: HYM532100 N-Series ‘ H YU N D A I 1M X 32-bit CMOS ORAM MODULE DESCRIPTION The HYM532100 is a 1M x 32-bit Fast page m ode CMOS DRAM m odule consisting of eight HY514400A in 20/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22nF decoupling ca p a citor is


    OCR Scan     		PDF HYM532100 32-bit HY514400A HYM532100TNG/LTNG DQ0-DQ31) 1DC01-10-JAN95 1DC01

    HYM536200AM60

    Abstract: 00S11
    Text: • H Y U N D A I H Y M 5 3 6 2 A M - S e r î e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536200A 36-bit HY514400A HY531000A 22nFdecoupling HYM536200AM/ALM HYM536200AMG/ALMG 06QI127 HYM536200AM60 00S11

    HYM536100AM

    Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
    Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A 22uFdecouDlina HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-01-FEB94 HYM536100AM HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM540200 Series SEMICONDUCTOR 2M x 40-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM540200 Is a 2M x 40-bit Fast page mode CMOS DRAM module consisting of twenty HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22,uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM540200 40-bit HY514400A HYM540200M/LM HYM540200MG/LMG 1CD06-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 11-OmW 1BB05-01-FEB94 4b75D6Ã GDD32bÃ

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HYC532200 Series 2Mx32 DRAM CARD DESCRIPTION The HYC532200 is the DRAM memory card consisting of sixteen HY514400ALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in memory in the portable


    OCR Scan     		PDF HYC532200 2Mx32 HY514400ALT x32/16 1MC02-02-FEB95 000400b HYC532200-Series HYC532200

    HYM591000B

    Abstract: No abstract text available
    Text: •HYUNDAI HYM591000B Series SEMICONDUCTOR 1M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591000B is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of two HY514400A and one HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|xF decoupling capacitor is


    OCR Scan     		PDF HYM591000B HY514400A HY531000A HYM591000BM/BLM BB06-00-M 1BB06-00-M 1BB06-00-MAY93