AL569
Abstract: al565
Text: Optical Lead Part Number Table Description Part Number Lead, Optical, 1m, Toslink, Blue AL560 Lead, Optical, 2m, Toslink, Blue AL561 Lead, Optical, 5m, Toslink, Blue AL565 Lead, Optical, 10m, Toslink, Blue AL569 Lead, Optical, 1m, Toslink to 3.5mm AL580 Lead, Optical, 1m, 3.5mm, Blue
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AL560
AL561
AL565
AL569
AL580
AL570
AL573
AL569
al565
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MARKING 9.1M
Abstract: RCR50EN
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
EN60065
RCR50EN
MARKING 9.1M
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Untitled
Abstract: No abstract text available
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
EN60065
RCR50EN
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Untitled
Abstract: No abstract text available
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
EN60065
RCR50EN
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RCR16
Abstract: No abstract text available
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
EN60065
RCR50EN
RCR16
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Untitled
Abstract: No abstract text available
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
RCR25EN
EN60065
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EN60065
Abstract: RcR RESISTORS RCR50 CSA-C22 RCR60 RCR50EN RCR100 rcr resistor
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range. • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
EN60065
RCR50EN
RcR RESISTORS
RCR50
RCR60
RCR100
rcr resistor
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Untitled
Abstract: No abstract text available
Text: resistors RCR anti-surge power type leaded resistor EU features • Excellent anti-surge characteristics • Stable characteristics of moisture resistance up to high resistance range • RCR50 + 1MΩ - 12MΩ , RCR50EN (1MΩ - 12MΩ) and RCR60 (1MΩ - 12MΩ) are discharge resistors recognized
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RCR50
RCR50EN
RCR60
UL1676
CSA-C22
1-M94)
RCR25EN
EN60065
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ptz decoder
Abstract: ADSST-1803 AD1803 AD1881 AD1881A ADSP-2185 ADV7171 Videophone Development MOSQUITO noise schematic ADSST-21065
Text: H.324 VidCom Videophone, Video Communications, and Multimedia SPI INTE ERFACE SDRAM 1M ؋ 32 FRAME CAPTURE ADSST-VC-201 VIDEO I/O PROCESSOR ADV7171 FLASH 1M ؋ 8 SDRAM 1M ؋ 32 ADSST-21065L ADSST-2185 ADSST-1803 ADSST-2185 2185 SILICO ON DAA A AD1881A SPI INTERFACE
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ADSST-VC-201
ADV7171
ADSST-21065L
ADSST-2185
ADSST-1803
AD1881A
32-bit
ADSST-VC-4200
D-81373
ptz decoder
ADSST-1803
AD1803
AD1881
AD1881A
ADSP-2185
ADV7171
Videophone Development
MOSQUITO noise schematic
ADSST-21065
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AC 1501
Abstract: CAS20
Text: MOSEL-VITELIC Features • ■ ■ ■ ■ ■ ■ ■ ■ PRELIMINARY V404J32/36 V404J32 and V404J36 1M x 32 and 1M x 36 CMOS MEMORY MODULES Description 1,048,576 x 32/36 bit organization Utilizes 1M x 4 CMOS DRAMs Fast access times: 80 ns, 100 ns Fast Page mode operation
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V404J32/36
V404J32
V404J36
72-lead
V404J36
72-lead
AC 1501
CAS20
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-01 R6 AHA 3/15/13 Fixed Resistors CERTIFIED Type RCR16, RCR25, RCR50 + , RCR50EN, RCR60, RCR75 and RCR100 CERTIFIED 1. Scope of Application RCR50EN (100kΩ - 33MΩ) and RCR60 (470kΩ RCR50 +(1MΩ - 12MΩ), RCR50EN (1MΩ - 12MΩ)
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SS-01
RCR16,
RCR25,
RCR50(
RCR50EN,
RCR60,
RCR75
RCR100
RCR50
RCR50EN
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY W9864G6EB 1M x 4 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W9864G6EB is a high-speed synchronous dynamic random access memory SDRAM , organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.13 µm process technology,
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W9864G6EB
143MHz/CL3.
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MCM69R618ZP4
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M Late Write HSTL The MCM69R536 / 618 is a 1M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache, ATM switch, Telecom, and other high speed memory applications. The MCM69R618
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MCM69R536/D
MCM69R536
MCM69R618
MCM69R536
MCM69R618
MCM69R536/D
MCM69R618ZP4
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DP8422V-33
Abstract: No abstract text available
Text: DP8420V-33,DP8421V-33,DP8422V-33, DP84T22-25 DP8420V-33 DP8421V-33 DP8422V-33 DP84T22-25 microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers Literature Number: SNOS603A DP8420V 21V 22V-33 DP84T22-25 microCMOS Programmable 256k 1M 4M Dynamic RAM
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DP8420V-33
DP8421V-33
DP8422V-33,
DP84T22-25
DP8422V-33
DP84T22-25
256k/1M/4M
SNOS603A
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V4DJX132BLT/V4DJ132BLT 1M X 32 HIGH PERFORMANCE EDO/FPM MEMORY MODULE Features Description • ■ ■ ■ The V4DJX132BLT/V4DJ132BLT memory Module is organized as 1,097,152 x 32 bits in a 72lead single-in-line module. The 1M x 32 memory
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V4DJX132BLT/V4DJ132BLT
72lead
32-bit
V4DJX132BLT
V4DJ132BLT
72-lead
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23C8000
Abstract: 23C8000-10 MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10
Text: MX23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
impoJUL/03/2003
23C8000
23C8000-10
MX23C8000MC-10
MX23C8000PC-10
MX23C8000QC-10
MX23C8000TC-10
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AM20
Abstract: CMP12 SM5901AF CAS-000 MN662
Text: SM5901AF compression and non compression type anti-shock memory controller with built-in 1M DRAM NIPPON PRECISION CIRCUITS INC. Overview 1M DRAM can be connected to expand the memory to 2M bits. Digital attenuator, soft mute and related functions are also incorporated. It operates from
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SM5901AF
384fs
NC9607BE
AM20
CMP12
SM5901AF
CAS-000
MN662
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, 1K MCM318165CV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.40µ CMOS high–speed
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MCM318165CV/D
MCM318165CV
MCM318165CV)
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC PRELIMINARY V408J32 1M X 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • ■ The V408J32 memory Module is organized as 1,097,152 x 32 bits in a 72-lead single-in-line mod ule. The 1M x 32 memory module uses 8 MoselVitelic 1M x 4 DRAMs. The x32 modules are ideal
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OCR Scan
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V408J32
72-lead
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audio Transmitter receiver optic cable
Abstract: PLR101 PLM101-1M PLT101
Text: F~\z-P7~ tr OPTIC LINK PLM101-1M PLM101-1M: PLASTIC FIBER OPTIC LINK PLT101 : TRANSMITTER MODULE PLR101 : RECEIVER MODULE D ES C R IP T IO N N EPO C Series FEA TU R ES PLM101*1M includes a transmitter module PLT101 , • Small Package receiver module (P LR 101), and a plastic fiber optic cable
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PLM101-1M
PLM101-1M:
PLT101
PLR101
PLM101-1M
PLT101)
PLR101)
PLT101
PLR101
audio Transmitter receiver optic cable
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DISTORTION PEDAL DIAGRAM
Abstract: bass drum sound ic KS0174 TR-808 KS0174-1M circuit diagram of musical electronics bell with roland piano Le grand tango VIOLIN snare drum sound ic echo reverb ic guitar
Text: MULTIMEDIA AUDIO KS0174-1M.2M &mniWavej,. SAMPLE ROMS 44 SOP-600 The ks0174-1M is a 1M-byte sam ple ROM for the KS0164 O m niW am ejr. The ROM utilies a word mode 524,288x16 bit organization 8M-bit . The KS0174-2M is a 2M*byte sam ple ROM for the KSQ164 iim n iW avejr. The ROM utilizes a word mode 1,048,576 x
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KS0174-1M
OP-600
KS0164
288x16
KS0174-2M
KSQ164
16M-M)
MT-32,
DISTORTION PEDAL DIAGRAM
bass drum sound ic
KS0174
TR-808
circuit diagram of musical electronics bell with
roland piano
Le grand tango VIOLIN
snare drum sound ic
echo reverb ic guitar
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9660t
Abstract: LH521008
Text: SHARP b OE CORP D • Ô1ÔD7TÔ DDDTME? 302 «SRPJ 'T - H C - 2 3 - / O LH101504 LH101510 . R E L I M I N A Ü 3 H 1 3 C5 WF A,s Au Ai 3 R Y High-Speed BiCMOS 1M 1M xi ECL Static RAM ■ Description ■ The LH101504/LH101510 is a 256K/1M-bit high speed
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LH101504
LH101510
LH101504/LH101510
256K/1M-bit
742S6
9660t
LH521008
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Untitled
Abstract: No abstract text available
Text: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:
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SST39VF080Q_
SST39VF080Q
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Untitled
Abstract: No abstract text available
Text: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS
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KMM5321204AW
KMM5321204AW/AWG
1Mx32
KMM5321204AW
1Mx16bit
42-pin
72-pin
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