Untitled
Abstract: No abstract text available
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
JUN/08/2000
NOV/08/2000
JUL/16/2001
APR/25/2002
APR/26/2002
NOV/21/2002
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8088 microprocessor circuit diagram
Abstract: 23C8000 8088 microprocessor pin description 23C80 23C8000-10 MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible • Operating current : 40mA • Standby current : 100uA
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MX23C8000
100/120/150/200ns
100uA
MX23C8000
100/120/150/200ns.
SEP/25/1997
JAN/29/1999
JUN/08/2000
NOV/08/2000
JUL/16/2001
8088 microprocessor circuit diagram
23C8000
8088 microprocessor pin description
23C80
23C8000-10
MX23C8000MC-10
MX23C8000PC-10
MX23C8000QC-10
MX23C8000TC-10
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Untitled
Abstract: No abstract text available
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible • Operating current : 40mA • Standby current : 100uA
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MX23C8000
100/120/150/200ns
100uA
MX23C8000
100/120/150/200ns.
inte-32TSOP
PM0137
SEP/25/1997
JAN/29/1999
JUN/08/2000
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Untitled
Abstract: No abstract text available
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
JAN/29/1999
JUN/08/2000
NOV/08/2000
JUL/16/2001
APR/25/2002
APR/26/2002
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23C8000
Abstract: 23C8000-10 MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
impoJUL/03/2003
23C8000
23C8000-10
MX23C8000MC-10
MX23C8000PC-10
MX23C8000QC-10
MX23C8000TC-10
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23c8000
Abstract: MX23C8000 MX23C8000MC-10 MX23C8000PC-10 MX23C8000QC-10 MX23C8000TC-10 23C8000-10
Text: Introduction Selection Guide 23C8000 8M-BIT 1M x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100µA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
23c8000
MX23C8000MC-10
MX23C8000PC-10
MX23C8000QC-10
MX23C8000TC-10
23C8000-10
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23C8000
Abstract: No abstract text available
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible • Operating current : 40mA • Standby current : 100uA
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MX23C8000
100/120/150/200ns
100uA
MX23C8000
100/120/150/200ns.
24pin
PM0137
SEP/25/1997
JAN/29/1999
JUN/08/2000
23C8000
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Untitled
Abstract: No abstract text available
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
SEP/25/1997
JAN/29/1999
JUN/08/2000
NOV/08/2000
JUL/16/2001
APR/25/2002
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GI9332
Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Text: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8
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MB83256
MB83512
MB831000
MB832000
MB834100
MB834000
MB834200
27C1024H
27C101A
27C301A
GI9332
mb831000
MB834000
23C2001
23C1001
23c1000
UPD23C1001
23c4001
HN62304
mb832000
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Untitled
Abstract: No abstract text available
Text: 23C8000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • • • • • • 1M x 8 organization Single +5V power supply Fast access time : 100/120/150/200ns Totally static operation Completely TTL compatible Operating current : 25mA • Standby current : 15uA
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
consideration/08/2000
NOV/08/2000
JUL/16/2001
APR/25/2002
APR/26/2002
NOV/21/2002
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MQ4A
Abstract: 32-SO
Text: 23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C8000D(G) is • • • • 1,048,576 x 8 bit organization Fast access tim e : 100ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.)
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KM23C8000D
100ns
23C8000D
32-DIP-600
23C8000DG
32-SO
P-525
23C8000D
32-DIP-600)
MQ4A
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d23c8000xcz
Abstract: s48g 23C8000 PD23C8000xcz
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE /512K-WORD BY 16-BIT (WORD MODE) Description The /¿23C8000X is a 8, 388, 608 bits m ask-program m able ROM. The word organization is selectable (BYTE mode: 1, 048, 576 w ords by 8 bits, W ORD mode: 524, 288 words by 16 bits).
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/512K-WORD
16-BIT
uPD23C8000X
PD23C8000X
42-pin
44-pin
48-pin
d23c8000xcz
s48g
23C8000
PD23C8000xcz
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC 42E D n 7=1^142 G Q lllb B b CMOS MASK ROM 23C8000 8M-BH 1M X 8 CMOS MASK ROM FEATURES • • • • • • • • • 1,048,576 x 8 bit organization Fast access tim e: 150ns (max.) Supply voltage: single + 5 V C urrent consum ption
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KM23C8000
150ns
32-pln,
KM23C8000)
23C8000G)
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000G
32000FP.
23C32100G
32100FP
23C8001A
23C8001
KM23C2001
2001h
23c4001
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Untitled
Abstract: No abstract text available
Text: •WXIC 23C8000 8M-BIT 1 M x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100|aA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP 1M x 8 organization
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
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Untitled
Abstract: No abstract text available
Text: m A M 23C8000 MACRONIX. INC. M x 8 CMOS MASK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100)1 A • Package type: - 32 pin plastic DIP - 32 pin plastic SOP 1M x 8 organization Single +5V power supply Fast access time: 120/150/200ns max)
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X23C8000
120/150/200ns
MX23C8000
120/150/200ns.
MX23CPulse
MX23C8000PC-12
MX23C8000MC-12
MX23C8000PC-15
MX23C8000MC-15
MX23C8000PC-20
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Untitled
Abstract: No abstract text available
Text: MX2308000 8M-BIT [1M x 8] CMOS MASK ROM FEATURES • 1M x 8 organization • • • • Operating current :40mA Standby current: 10OuA Package - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP Single +5V power supply Fast access time : 100/120/150/200ns
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MX2308000
10OuA
100/120/150/200ns
MX23C8000
100/120/150/200ns.
PM0137
MX23C8000
SEP/25/1997
JAN/29/1999
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23C8000
Abstract: No abstract text available
Text: 23C8000 GoldStar 1,048,576x8 BIT CMOS GOLDSTAR ELECTRON CO., LTD. MASK-PROGRAMMABLE ROM Features General Description The 23C8000 is a 1048576 words by 8 bits EPROM-Compatible Read-Only-Memory. It is designed to be compatible with all microproces sors and similar applications where high perfor
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GM23C8000
576x8
GM23C8000
23C8000)
23C8000
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PD23C8000L
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT 23C8000L 8M-BIT MASK-PROGRAMMABLE ROM 1M-WORD BY 8-BIT BYTE MODE / 512K-WORD BY 16-BIT (WORD MODE) Description The ^¡23C8000L is a 8,388,608 bits mask-programm able ROM. The word organization is selectable (BYTE mode:
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UPD23C8000L
512K-WORD
16-BIT
PD23C8000L
42-pin
44-pin
48-pin
S44G5-80-7JF5
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Untitled
Abstract: No abstract text available
Text: M ä IC IN/23C8000 8M-BITX1M x 8 CM OS M A SK ROM FEATURES • Operating current: 40mA • Standby current: 100mA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC - 32 pin plastic TSOP 1M x 8 organization Single +5V power supply
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3C8000
100/120/150/200ns
MX23C8000
MX23C8000TC-10
MX23C8000PC-12
MX23C8000MC-12
MX23C8000QC-12
MX23C8000TC-12
MX23C8000PC-15
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23C8000
Abstract: No abstract text available
Text: IVIA 23C8000 MACRONiX, INC. SM -O rrn IVI x 8 ] CM O S M A SK ROM FEATURES • • • • • • Operating current: 40mA • Standby current: 100|xA • Package type: - 32 pin plastic DIP - 32 pin plastic SOP - 32 pin plastic PLCC 1M x 8 organization Single +5V power supply
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MX23C8000
100/120/150/200ns
MX23C8000
100/120/150/200ns.
MX23C8000PC-10
MX23C8000MC-10
MX23C8000QC-10
MX23C8000PC-12
MX23C8000MC-12
MX23C8000QC-12
23C8000
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23c8000
Abstract: KM23C8000
Text: 23C8000 CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23C 8000 ¡s a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •
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KM23C8000
150ns
32-pin,
23C8000)
23C8000G)
23c8000
KM23C8000
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