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Infineon Technologies AG IPD180N10N3GATMA1 MOSFET N-CH 100V 43A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD180N10N3GATMA1	Cut Tape	5,026		1	1 $1.74 10 $1.105 100 $1.74 1000 $0.53652 10000 $0.53652	Buy Now
	IPD180N10N3GATMA1	Digi-Reel	5,026		1	1 $1.74 10 $1.105 100 $1.74 1000 $0.53652 10000 $0.53652	Buy Now
	IPD180N10N3GATMA1	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.4515	Buy Now
Avnet Americas	IPD180N10N3GATMA1	Reel		16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD180N10N3GATMA1		11,687			1 $0.65 10 $0.642 100 $0.539 1000 $0.452 10000 $0.451	Buy Now
Bristol Electronics	IPD180N10N3GATMA1		324			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPD180N10N3GATMA1				1	1 $0.5017 10 $0.5017 100 $0.4716 1000 $0.4264 10000 $0.4264	Buy Now

Chip1Stop	IPD180N10N3GATMA1	Cut Tape	2,273			1 - 10 $0.869 100 $0.58 1000 $0.421 10000 $0.421	Buy Now
EBV Elektronik	IPD180N10N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPD180N10N3GATMA1		23,700			1 - 10 - 100 $0.6683 1000 $0.5174 10000 $0.5174	Buy Now
Littelfuse Inc IXTP180N10T MOSFET N-CH 100V 180A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP180N10T	Tube	3,040		1	1 $5.35 10 $5.35 100 $3.3128 1000 $3.3128 10000 $3.3128	Buy Now
Infineon Technologies AG IAUA180N10S5N029AUMA1 MOSFET_(75V 120V( PG-HSOF-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IAUA180N10S5N029AUMA1	Cut Tape	1,926		1	1 $4.06 10 $2.672 100 $4.06 1000 $1.4405 10000 $1.4405	Buy Now
	IAUA180N10S5N029AUMA1	Digi-Reel	1,926		1	1 $4.06 10 $2.672 100 $4.06 1000 $1.4405 10000 $1.4405	Buy Now
Mouser Electronics	IAUA180N10S5N029AUMA1		1,677			1 $3.52 10 $2.5 100 $1.8 1000 $1.45 10000 $1.44	Buy Now
Newark	IAUA180N10S5N029AUMA1	Cut Tape	2,000		1	1 $3.72 10 $3.13 100 $2.54 1000 $1.93 10000 $1.93	Buy Now
Rochester Electronics	IAUA180N10S5N029AUMA1		643		1	1 $1.6 10 $1.6 100 $1.5 1000 $1.36 10000 $1.36	Buy Now
Chip1Stop	IAUA180N10S5N029AUMA1	Cut Tape	2,000			1 $2.95 10 $2.25 100 $1.71 1000 $1.5 10000 $1.5	Buy Now

EBV Elektronik	IAUA180N10S5N029AUMA1			27 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB180N10S402ATMA1 MOSFET N-CH 100V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB180N10S402ATMA1	Digi-Reel	1,859		1	1 $6 10 $4.026 100 $6 1000 $2.4355 10000 $2.4355	Buy Now
	IPB180N10S402ATMA1	Cut Tape	1,859		1	1 $6 10 $4.026 100 $6 1000 $2.4355 10000 $2.4355	Buy Now
	IPB180N10S402ATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.4355 10000 $2.4355	Buy Now
Avnet Americas	IPB180N10S402ATMA1	Reel	1,000	12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPB180N10S402ATMA1		1,365			1 $5.1 10 $3.58 100 $2.91 1000 $2.43 10000 $2.43	Buy Now
Newark	IPB180N10S402ATMA1	Cut Tape	6,703		1	1 $5.3 10 $3.71 100 $2.77 1000 $2.54 10000 $2.54	Buy Now
Rochester Electronics	IPB180N10S402ATMA1		2,680		1	1 $2.71 10 $2.71 100 $2.55 1000 $2.3 10000 $2.3	Buy Now

Chip1Stop	IPB180N10S402ATMA1	Cut Tape	1,808			1 $4.89 10 $3.43 100 $2.79 1000 $2.14 10000 $2.14	Buy Now
EBV Elektronik	IPB180N10S402ATMA1			13 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPB180N10S403ATMA1 MOSFET N-CH 100V 180A TO263-7
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB180N10S403ATMA1	Digi-Reel	1,140		1	1 $6.26 10 $4.205 100 $6.26 1000 $2.54082 10000 $2.54082	Buy Now
	IPB180N10S403ATMA1	Cut Tape	1,140		1	1 $6.26 10 $4.205 100 $6.26 1000 $2.54082 10000 $2.54082	Buy Now
Chip1Stop	IPB180N10S403ATMA1	Cut Tape	1,000			1 $5.75 10 $3.86 100 $2.79 1000 $2.19 10000 $2.19	Buy Now

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180N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
180N10 Abstract: No abstract text available Text: Advanced Technical Information IXFX 180N10 IXFK 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient	Original	PDF	180N10 180N10 247TM O-264
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	PDF	180N10 OT-227 E153432 125OC
180N10 Abstract: 125OC Text: IXFK 180N10 IXFX 180N10 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V	Original	PDF	180N10 125OC 180N10 125OC
Untitled Abstract: No abstract text available Text: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	PDF	180N10 227TM IXFN180N10 728B1
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)	Original	PDF	180N10 OT-227 E15000 100kHz 125OC
180N10 Abstract: IXFN 180N10 SOT-227 Package 125OC IXFN180N10 Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	PDF	180N10 OT-227 E153432 125OC 180N10 IXFN 180N10 SOT-227 Package 125OC IXFN180N10
Tf 227 Abstract: No abstract text available Text: Advanced Technical Information IXFN 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V	Original	PDF	180N10 OT-227 E153432 Tf 227
IXFN180N10 Abstract: ISOPLUS-227 180N10 Text: IXFE 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single Die MOSFET = 100 V = 176 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS	Original	PDF	180N10 227TM IXFN180N10 728B1 ISOPLUS-227 180N10
180N103 Abstract: No abstract text available Text: 180N103 AC-DC 180Watts Single output power supply Ver.0 FEATURES ● Applications:POSPoE、Industry ● High Efficiency ● ZVS technology to reduce power dissipation ● Protections:OVP、OCP、SCP Recovery ● Active:PFC ● MTBF > 300,000 hours at 25℃ full load	Original	PDF	180N103 180Watts 2x127x35 264Vacï 115Vac 60Amp 120Vac,
180n10 Abstract: IXFK 180N10 Text: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100	Original	PDF	O-264 180N10 180N10 100kHz 125OC IXFK 180N10
180N10 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW	Original	PDF	180N10 ISOPLUS247TM 247TM
180n10 Abstract: 125OC Text: HiPerFETTM Power MOSFETs IXFK 180N10 IXFX 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 100 100	Original	PDF	180N10 247TM 125OC 180n10 125OC
180N10 Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW Electrically Isolated Back Surface RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW	Original	PDF	180N10 ISOPLUS247TM
IXFN 180N10 Abstract: 180n10 Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)	Original	PDF	180N10 OT-227 100kHz 125OC IXFN 180N10 180n10

180N10N Abstract: IEC61249-2-21 IPP180N10N3 JESD22 PG-TO220-3 marking D33 IPI180N10N3 IPP180N10N3G IPI180N10N3 G Text: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPP180N10N3 IPI180N10N3 O-263 IEC61249-2-21 PG-TO220-3 PG-TO262-3 180N10N 180N10N IEC61249-2-21 JESD22 PG-TO220-3 marking D33 IPP180N10N3G IPI180N10N3 G
STH180N10F3-2 Abstract: sth180n10f3 STH180N10 Text: 180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET III Power MOSFET Features Order codes VDSS RDS on max. ID 180N10F3-2 100 V 4.5 mΩ 180 A • Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications	Original	PDF	STH180N10F3-2 SC06140 180N10F3 STH180N10Fin STH180N10F3-2 sth180n10f3 STH180N10
Untitled Abstract: No abstract text available Text: Ordering number : EN*A2285 180N10B Advance Information http://onsemi.com Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features • Ultra Low On-Resistance • Low Gate Charge • Pb-free and RoHS Compliance • High Speed Switching • 100% Avalanche Tested	Original	PDF	A2285 NDPL180N10B A2285-5/5
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
180N10N Abstract: IPP180N10N3 JESD22 PG-TO220-3 d33 marking 180N10 IPI180N10N3 Text: 180N10N3 G 180N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 18 mΩ ID 43 A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	PDF	IPP180N10N3 IPI180N10N3 O-263 PG-TO220-3 PG-TO262-3 180N10N 180N10N JESD22 PG-TO220-3 d33 marking 180N10
Untitled Abstract: No abstract text available Text: mxYS Advanced Technical Information HiPerFET Power MOSFET IXFN 180N10 DSS I D25 RDS on Single MOSFET Die Tj = 25°C to 150°C Tj = 25°C to 150°C, Rgs = 1M£2 100 100 V V Vos« Continuous Transient ±20 ±30 V V Tc =25°C Terminal (current limit) T 0 = 25° C; pulse width limited by TJM	OCR Scan	PDF	IXFN180N10 OT-227
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFET Power MOSFETs IXFR 180N10 V DSS = 100 ISOPLUS247™ ^D25 ” 165 VDSS ^ = 25°Cto150°C Tj = 25°Cto 150°C; RGS= 1 M il 100 100 V V Continuous Transient +20 ±30 V V '*n Tc = 25° C MOSFET chip capability External lead (current limit)	OCR Scan	PDF	180N10 ISOPLUS247TM Cto150
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 ID25 = 100 V = 180 A 8 mQ DS on Single MOSFET Die trr < 250 ns » Maximum Ratings PLUS247™ Symbol Test Conditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i	OCR Scan	PDF	180N10 PLUS247â
Untitled Abstract: No abstract text available Text: IXYS Advanced Technical Information HiPerFET Power MOSFETs IXFX 180N10 IXFK 180N10 Single M O S FE T D ie Symbol Test Conditions v T j DSS 100 100 V V Continuous Transient i20 i30 V V T0 = 25° C MOSFET chip capability External lead (current limit) Tc =25°C, Notel	OCR Scan	PDF	180N10 180N10 247TM Cto150 O-264
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	PDF	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q

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180N10 Search Results

180N10 Price and Stock

Infineon Technologies AG IPD180N10N3GATMA1

Littelfuse Inc IXTP180N10T

Infineon Technologies AG IAUA180N10S5N029AUMA1

Infineon Technologies AG IPB180N10S402ATMA1

Infineon Technologies AG IPB180N10S403ATMA1

180N10 Datasheets Context Search

180N10

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180N10

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180N10

Tf 227

IXFN180N10

180N103

180n10

180N10

180n10

180N10

IXFN 180N10

180N10N

STH180N10F3-2

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transistor 12n60c

180N10N

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12N60c equivalent