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    16V 4600 UF Search Results

    16V 4600 UF Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RAA230231GSB#HA0 Renesas Electronics Corporation 16V Input, 3A, Dual Step-Down DC/DC Converter + Battery Backup Visit Renesas Electronics Corporation

    16V 4600 UF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTM4600

    Abstract: 4600 fet transistor 4600 fet 6TPE330MIL LTM4600EV LTM4600IV PN01 4600 mosfet MOSFET 4600
    Text: LTM4600 10A High Efficiency DC/DC µModule FEATURES n n n n n n n n n n n n n n DESCRIPTION Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two Module DC/DC Converters for 20A Output Current


    Original     		PDF LTM4600 Included601 LTM4601-1 LTM4602 LTM4603 LTM4603-1 LTM4601 4600fc LTM4600 4600 fet transistor 4600 fet 6TPE330MIL LTM4600EV LTM4600IV PN01 4600 mosfet MOSFET 4600

    LTM4600

    Abstract: LTM4600IV#PBF
    Text: LTM4600 10A High Efficiency DC/DC µModule U FEATURES DESCRIPTIO • The LTM 4600 is a complete 10A, DC/DC step down power supply. Included in the package are the switching controller, power FETs, inductor, and all support components. Operating over an input voltage range of 4.5V to 20V, the


    Original     		PDF LTM4600 LTM4600 LTM4601-1 LTM4601 100pF C3216X5R1E106MT JMK316BJ226ML-T501 4TPE470MCL 4600fb LTM4600IV#PBF

    CGH27015F-TB

    Abstract: amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015 CGH27015F CGH27015-TB TRANSISTOR A98
    Text: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015F CGH27015 CGH2701 CGH27015F CGH27015F-TB amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015-TB TRANSISTOR A98

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701

    ofdm amplifier

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015F CGH27015 CGH2701 CGH27015F ofdm amplifier

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and


    Original     		PDF CGH35060F CGH35060F CGH3506

    CGH27060F

    Abstract: 10UF 470PF
    Text: PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and


    Original     		PDF CGH27060F CGH27060F CGH2706 10UF 470PF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high


    Original     		PDF CGHV40100 CGHV40100 CGHV40100, CGHV40 V40100P

    Untitled

    Abstract: No abstract text available
    Text: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV35150 CGHV35150 CGHV35150F-TB

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F025S CGHV1F025S

    ATC600L

    Abstract: CGH55030F2 ATC600S CGH55030 CGH55030P2 CGH5503 cree driver CGH40025F CGH55030-TB CGH55
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 ATC600L ATC600S CGH55030 CGH5503 cree driver CGH40025F CGH55030-TB CGH55

    Untitled

    Abstract: No abstract text available
    Text: CGHV35150 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Cree’s CGHV35150 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV35150 CGHV35150 CGHV35150F-TB

    CGH55030P2

    Abstract: CGH5503 CGH55030 CGH55030F2 CGH55030-TB JESD22
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F025S 25 W, DC - 15 GHz, 40V, GaN HEMT Cree’s CGHV1F025S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F025S CGHV1F025S

    Untitled

    Abstract: No abstract text available
    Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14250 CGHV14250 CGHV14 350anning,

    CGH55030F2

    Abstract: CGH55030P2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2 CGH5503 CGH55030 CGH55030-TB JESD22 CGH55030P2 APPLICATION NOTE

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    CGH55030F2

    Abstract: No abstract text available
    Text: CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree’s CGH55030F2/CGH55030P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F2/


    Original     		PDF CGH55030F2 CGH55030P2 CGH55030F2/CGH55030P2 CGH55030F2/ CGH55030P2 CGH5503 CGH55 030F2

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied


    Original     		PDF CGH35030F CGH35030F CGH3503

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P