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    CGHV27200 Search Results

    CGHV27200 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGHV27200F Cree RF FETs, Discrete Semiconductor Products, HEMT RF 50V 200W 2.7GHZ 440162 Original PDF
    CGHV27200-TB Cree RF FETs, Discrete Semiconductor Products, HEMT RF 50V 100W 2.7GHZ 440162 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P CGHV27200-TB

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz


    Original     		PDF CGHV27200 CGHV27200 CGHV27 GHV27200P