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    CGH27015 Search Results

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    CGH27015 Price and Stock

    MACOM CGH27015F

    RF MOSFET HEMT 28V 440166
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27015F Tray 2 1
    • 1 $103.29
    • 10 $89.375
    • 100 $89.375
    • 1000 $89.375
    • 10000 $89.375
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    Mouser Electronics CGH27015F 181
    • 1 $111.92
    • 10 $103.95
    • 100 $98.85
    • 1000 $98.85
    • 10000 $98.85
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    Richardson RFPD CGH27015F 1
    • 1 $153.22
    • 10 $153.22
    • 100 $153.22
    • 1000 $153.22
    • 10000 $153.22
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    MACOM CGH27015P

    RF MOSFET HEMT 28V 440196
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27015P Tray 50
    • 1 -
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    • 100 $75.8124
    • 1000 $75.8124
    • 10000 $75.8124
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    Mouser Electronics CGH27015P
    • 1 -
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    • 100 $83.43
    • 1000 $83.43
    • 10000 $83.43
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    Richardson RFPD CGH27015P 1
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    MACOM CGH27015F-AMP

    EVAL BOARD FOR CMPA901A035F1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27015F-AMP Bulk 2
    • 1 -
    • 10 $752.46
    • 100 $752.46
    • 1000 $752.46
    • 10000 $752.46
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    Mouser Electronics CGH27015F-AMP 5
    • 1 $752.46
    • 10 $752.46
    • 100 $752.46
    • 1000 $752.46
    • 10000 $752.46
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    Richardson RFPD CGH27015F-AMP 1
    • 1 -
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    CGH27015 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH27015F Cree 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Original PDF
    CGH27015P Wolfspeed 15W, GAN HEMT, 28V, DC-6.0GHZ, P Original PDF
    CGH27015P Wolfspeed 15W, GAN HEMT, 28V, DC-6.0GHZ, P Original PDF

    CGH27015 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH27015

    Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF

    CGH27015-TB

    Abstract: CGH27015 CGH27015F JESD22
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701

    CGH27015S

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH27015S CGH27015S CGH2701

    STR W 5753 a

    Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
    Text: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P STR W 5753 a str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015F 44019

    CGH27015-TB

    Abstract: CGH27015
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P CGH27015-TB

    CGH27015S

    Abstract: 003536 54-619 msl 9351 06752
    Text: PRELIMINARY CGH27015S 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which


    Original     		PDF CGH27015S CGH27015S CGH2701 003536 54-619 msl 9351 06752

    ofdm amplifier

    Abstract: No abstract text available
    Text: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015F CGH27015 CGH2701 CGH27015F ofdm amplifier

    Untitled

    Abstract: No abstract text available
    Text: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27015 CGH27015 CGH2701 27015P

    CGH27015F-TB

    Abstract: amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015 CGH27015F CGH27015-TB TRANSISTOR A98
    Text: PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX


    Original     		PDF CGH27015F CGH27015 CGH2701 CGH27015F CGH27015F-TB amplifier circuit ofdm amplifier cree rf 10UF 470PF CGH27015-TB TRANSISTOR A98

    CGH27060

    Abstract: str 16006 CGH40045F CGH27015 CGH27060F JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 CGH27060 str 16006 CGH40045F CGH27015 JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    Untitled

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706

    str 16006

    Abstract: 44019
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 str 16006 44019

    str 5 q 0765

    Abstract: CGH27060 str 16006 CGH27060F 10UF 470PF CGH27015 JESD22
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 str 5 q 0765 CGH27060 str 16006 10UF 470PF CGH27015 JESD22

    Untitled

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706

    cgh40045

    Abstract: str 5 q 0765
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 cgh40045 str 5 q 0765

    str 5 q 0765

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 str 5 q 0765